MARK SB Search Results

VIA Mark CoreFusion

Abstract: Connector 40 pin RTL8100C COREFUSION 800 PCA Board lcd lvds cable
Contextual Info: PCA-6775 VIA Mark ISA Half-size SBC, with VGA/LVDS/TTL/LAN/SSD/USB 1.1 Features • VIA Mark 533/800 MHz CPU • 128 MB Memory onboard, supports 1 SODIMM socket SDRAM up to 512 MB  10/100 Mbps Ethernet  Low power consumption and fanless Specifications

lcd LVDS display 30 pin connector

Abstract: 60 pin LCD connector to vga diagram led LVDS display 30 pin connector lcd 30 pin diagram lvds LVDS connector 30 pin lvds 30 pin lcd panel 15 pin out LVDS 30 pin to vga LVDS 30 pin connector cable LVDS connector lcd panel 18bit dual LVDS display 30 pin connector
Contextual Info: PCM-9377 NEW IDE Audio 3.5" SBC with VIA Mark, VGA/ LCD/ LVDS/ LAN/ USB Features LVDS TV enable Print Port Inverter Power LCD Power • VIA Mark 533/800 MHz Processor • Support 18-bit TTL and LVDS LCD display and TV-out Audio Power Power Switch  Support miniPCI type III and PC/104 for expansion

ic401

Abstract: IC302 IC101 CD Laser pickup focus tracking kss cxd2530q IC-101 KSS-521A TC9464FN-EL BA8272F-E2 BA6287
Contextual Info: CDX-424RF 7-3. SCHEMATIC DIAGRAM – RF Section – • See page 31 for Waveforms. • See page 32 for IC Block Diagrams. Page 27 The components identified by mark ! or dotted line with mark ! are critical for safety. Replace only with part number specified.

ADV9502

Abstract: ep320Ipc TNPLD610 N85C220 D5AC312 EP320IDC npld610 EP320IPI EPX780LC84 N5C180
Contextual Info: April 4, 1995 Dear Customer: Effective July 1, 1995, Altera will transition from a dual mark, to a single mark for all products acquired from Intel. In addition, Altera will be converting solely to Altera ordering codes for these products See Table 1 . This change is cosmetic in nature and does not effect

MARKING SB

Abstract: KDR720V
Contextual Info: SEMICONDUCTOR KDR720V MARKING SPECIFICATION VSC PACKAGE 1. Marking method Laser Marking 2. Marking SB No. 2005. 8. 17 Item Marking Description Device Mark SB KDR720V Revision No : 0 1/1

Contextual Info: S/SC/SOV 102 Multipole Plugs Contact polarity Z Contact polarity A All dimensions see note 1 S /S C s o v Guide mark < 5 7 / 0 .6Nm Guide mark <57/0.6Nm < 5 7 / 0 . 6Nm CLamp nut w i t h c a b l e b e n d r e l i e f o > . IF ^ - " p f 3 7 -

Contextual Info: SAW Fitters ' m m m m y fi P A C K A G E / t y >r- 41 V Unit: mm Tolerance: ±0 .2 TS PACKAGE X PACKAGE 5 “ ^ 0.5 3 • é 1.3 Part No. V D #• 1pin mark i /Lot No. .1.95 2.6; 3,5 7.4 W PACKAGE Z PACKAGE 2.0 max. 1.8 max. Part No. Part No. / Orientation mark

Dynatech Nevada ECG 100

Abstract: IEC60601-2-51 ECG circuit using microcontroller SBAA160 ecg simulator circuit ECG analog mux ECG Machine ecg using microcontroller ADS1278 60 Hz notch filter from ecg
Contextual Info: Application Report SBAA160 – March 2009 Analog Front-End Design for ECG Systems Using Delta-Sigma ADCs Karthik Soundarapandian, Mark Berarducci . Data Acquisition Products ABSTRACT This document discusses the characteristics of electrocardiogram ECG signals and

Contextual Info: j L El 0 O cn N N » 'y ^ ^ LO CK *4 -?* I I TYPE m r I I 20.6 AS "y i? ^ SHOWN ^ -ym I & LO CK TYPE I Cl 1 « O < TU EZL -tè I ri . i 1- y- — K • ^ TRADE MARK O a H LÜ r A h U -P T —? (TRADE MARK) ÎÉ jÉ Ü P fî (MANUFACTURING PLACE) _ B * (JAPAN)

4mm7

Contextual Info: j L El 0 O cn N N » 'y ^ ^ LO CK *4 -?* I I TYPE m r I I 20.6 AS "y i? ^ SHOWN ^ -ym I & LO CK TYPE I Cl 1 « O < TU EZL -tè I ri . i 1- y- — K • ^ TRADE MARK O a H LÜ r A h U -P T —? (TRADE MARK) ÎÉ jÉ Ü P fî (MANUFACTURING PLACE) _ B * (JAPAN)

SBS c11 battery

Abstract: moltech NI2020 moltech NI2020 smart battery system LTC1760 li-ion battery charger schematic FDS6912A IN4148 LTC1694
Contextual Info: LINEAR TECHNOLOGY MARCH 2005 COVER ARTICLE Smart Batteries: Not Just for Notebooks Anymore . 1 Mark Gurries Issue Highlights . 2 LTC in the News… . 2 DESIGN FEATURES Dual Monolithic Ideal Diodes

KTA1532T

Contextual Info: SEMICONDUCTOR KTA1532T MARKING SPECIFICATION TSM PACKAGE 1. Marking method Laser Marking 2. Marking No. J A SB 1 2 Item Marking Description Device Mark SB KTA1532T * Lot No. JA 2005. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 1.7 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 2.1 (5) 0.2 0.65 0.65 zFeatures 1) Nch MOSFET and schottky barrier diode

b711

Abstract: STA 5405 cc081 MC74HC00 000D 74HC00 AN1738 MC68HC05 MC68HC705JP7 74HC00 SERIES DATA
Contextual Info: Freescale Semiconductor Order this document by AN1738/D Freescale Semiconductor, Inc. AN1738 Instruction Cycle Timing of MC68HC05JJ/JP Series Microcontrollers By Mark L. Shaw Member, Technical Staff, Sensor Products Division Transportation Systems Group

Contextual Info: US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 1.7 (5) 2.1 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package.

transistors mos

Contextual Info: US5U3 Transistors 2.5V Drive Nch+SBD MOS FET US5U3 zStructure Silicon N-channel MOS FET / Schottky barrier diode zExternal dimensions Unit : mm TUMT5 2.0 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 1.7 (5) 2.1 zFeatures 1) Nch MOS FET and schottky barrier diode

b703

Abstract: A606 000D 74HC00 AN1738 MC68HC05 MC68HC705JP7 MC74HC00 3f05 motorola application note
Contextual Info: Order this document by AN1738/D Motorola Semiconductor Application Note AN1738 Instruction Cycle Timing of MC68HC05JJ/JP Series Microcontrollers By Mark L. Shaw Member, Technical Staff, Sensor Products Division Transportation Systems Group Phoenix, Arizona

US5U2

Contextual Info: US5U2 Transistors 4V Drive Nch+SBD MOSFET US5U2 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 0.85Max. 1.7 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 2.1 (5) 0.2 0.65 0.65 zFeatures 1) Nch MOSFET and schottky barrier diode

US5U29

Contextual Info: US5U29 Transistor 2.5V Drive Pch+SBD MOS FET US5U29 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TUMT5 2.0 0.2 1.7 (2) (3) 0~0.1 0.2 (1) 0.77 (4) 2.1 (5) 1pin mark zFeatures 1) The US5U29 combines Pch MOS FET with a

IDG10

Abstract: SML-LX121OCLUPGCTR
Contextual Info: PART NUMBER UNCONTROLLED DOCUMENT REV. S M L - L X 1 2 1 OCLUPGCTR PO LA R ITY MARK THIS SIDE 0,65 [0,026] £.70 [0.106] ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T 1.40 [0.055] - 1 PARAMETER MIN PEAK WAVELENGTH lf= 20MA TYP MAX SBO IR FORWARD VOLTAGE (IR/G)

transistors mos

Contextual Info: US5U1 Transistors 2.5V Drive Nch+SBD MOS FET US5U1 zStructure Silicon N-channel MOS FET / Schottky barrier diode zExternal dimensions Unit : mm TUMT5 2.0 1.7 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 2.1 (5) 0.2 0.65 0.65 zFeatures 1) Nch MOS FET and schottky barrier diode

SB-U-02-002

Abstract: 79RV4640-XXXDU SB-U-03-003 SB-U-02-004 SB-U-03-002 79RV4650-XXXDP 79RC64V474 SB-U-01-001 79RC64V475-XXXDP EME-6730UC
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN November 8, 1999 MEANS OF DISTINGUISHING CHANGED DEVICES: PCN #: M9911-03 DATE: Product Affected: 79RC64V475-XXXDP; 79RC64V474-XXXDZ Product Mark

Contextual Info: SBD Type：NSQ NSQ03A06 03A06 •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification cathode mark

TL112

Contextual Info: SBD Type：NSH NSH03A1 03A10 •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification cathode mark