MARK ND Search Results

672047

Abstract: Lumex 68 SML-LX2832SUGC-TR SML-LX1206GW-TR 67-1695-1-ND 671-8221 SML-LX0805SUGC-TR SML-LX1210GGC-TR 67-1557-1-ND 67-1551-2-ND
Contextual Info: Surface Mount LEDs Dim. in mm Fig. 1 — SOT-23 Footprint Fig. 2 — 0603 A B 1 2 2 1 C Fig. 6 — 1209 3.2 *Cathode .500 1 Fig. 11 Ro .25 + 2.4 3.2 - *Cathode Mark .800 .900 2.0 .150 .500 Fig. 12  node mark A * on 67-1366-ND .500 .5 1.5 1.5 3.20 1.00 *Anode mark on 67-1355-ND

Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: DATE: I0007-05 Product Affected: 79RC32V364 August 6, 2000 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Mark Back Mark Date Code Other

cmos Quartz 32768hz

Abstract: UM3217 PIEZO BUZZER DRIVER STOPWATCH 8 DIGIT 7 segment display p 521 ic 4 digit lcd display for watch Unicorn Microelectronics lcd UM3161 piezoelectric buzzer 12V digit watch ic
Contextual Info: UNICORN M I CR OE LECT RO NICS TSTÛTaa GQOlbBQ M I EME D 5 i U 1 = % / = ? 3 » ^3 5 = 5 i Y S I ^ UM3217 6-Digit Multifunction Watch P R E L IM IN A R Y Features • Single 1.5 volt battery operation ■ 32768Hz quartz crystal time base * 6-digit LC D with 7-day mark, AM/PM mark, date mark,

FPD6836

Abstract: Filtronic* FPD6836 l0241 Modelling Report FPD6836 Filtronic Components MARK 8E diode Modelling TOM2
Contextual Info: FPD6836 TOM3 and TOM2 Models 24/01/2005 Modelling Report FPD6836 TOM3 and TOM2 Models Version 1.0 - Mark Holm Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. Mark Holm 1 Filtronic Confidential FPD6836 TOM3 and TOM2 Models 24/01/2005

2G MARKING

Abstract: PG12GSUSC
Contextual Info: SEMICONDUCTOR PG12GSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 2G 0 1 2 1 No. Item Marking Description Device Mark 2G PG12GSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

PG15FBUSC

Contextual Info: SEMICONDUCTOR PG15FBUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 BD 1 0 1 2 1 No. Item Marking Description Device Mark BD PG15FBUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

3J10

Abstract: PG03JSUSC
Contextual Info: SEMICONDUCTOR PG03JSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 3J 1 0 1 2 1 No. Item Marking Description Device Mark 3J PG03JSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

sd marking

Abstract: PG15GSUSC
Contextual Info: SEMICONDUCTOR PG15GSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 SD 1 0 1 2 1 No. Item Marking Description Device Mark SD PG15GSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

marking 4f

Contextual Info: SEMICONDUCTOR PG24FSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 4F 1 0 1 2 1 No. Item Marking Description Device Mark 4F PG24FSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

USFB13

Abstract: Device Marking A3 A301
Contextual Info: SEMICONDUCTOR USFB13 MARKING SPECIFICATION USF PACKAGE 1. Marking method Laser Marking 2. Marking 2 A3 0 1 1 CATHODE MARK No. Item Marking Description Device Mark A3 USFB13 * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

USFB053

Contextual Info: SEMICONDUCTOR USFB053 MARKING SPECIFICATION USF PACKAGE 1. Marking method Laser Marking 2. Marking 2 53 0 1 1 CATHODE MARK No. Item Marking Description Device Mark 53 USFB053 * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

5H MARKING

Abstract: PG05HSUSC mark J2 marking 5h
Contextual Info: SEMICONDUCTOR PG05HSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 5H 1 0 1 2 1 No. Item Marking Description Device Mark 5H PG05HSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

PG08HSUSC

Contextual Info: SEMICONDUCTOR PG08HSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 8H 1 0 1 2 1 No. Item Marking Description Device Mark 8H PG08HSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

USFB073

Contextual Info: SEMICONDUCTOR USFB073 MARKING SPECIFICATION USF PACKAGE 1. Marking method Laser Marking 2. Marking 2 73 0 1 1 CATHODE MARK No. Item Marking Description Device Mark 73 USFB073 * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: ITT o SUBMINIATURE RECTANGULAR CONNECTORS CANNON 111~~1 MARK I D*M Cannon's Mark I O*M Series is widely used on military and commercial systems ranging from satell ites to telecommunica­ tion and computer equipment. The 0* M connector features a one-piece insulator for improved temperature characteristics

Contextual Info: Portable Labeling Systems/Printers DURA-MARK Printer and Accessories for Wire and Cable Identification • Use with PAN-MARK ™ 2.1 or higher for WINDOWS* Labeling Software to create custom self-laminating and heat shrink wire markers. • Custom capability allows labels to be produced in-house, anytime, anywhere.

SFR04

Abstract: GS-22-008 SC-SFR04
Contextual Info: PRODUCT NO REVISIONS DESCRIPTION ECN REV A B BY DATE RELEASED J05-02BD H.T 5/12/’05 Added heat resistance J05-0730 H.T IO/28/’OE in OJ o c5 I DETAIL E "BURNDY MARK ’KEY SLOT FOR /EXTRA CTIO N TOOL / MARK OF /CONTACTS NO. SLIDER MOVING 2REF. D , r 3-5

PBT-GF30

Abstract: PBT-GF-30 PBTGF-30 JAHL-10220 PBT-GF30 1.0 PBT-GF30 CONNECTOR JACS-10220 PBTGF30 jae mx Japan Aviation Electronics Industry TS
Contextual Info: JK ft E E 9 L 0 L TS 'ON DATE REV. 2 0NIMVÜQ ##ME 11 . J U1. 2005 DON w. w. ft S NO. 057778 DESCRIPTION SHAPE a ys C HK . DR. CHANGE S.I IDA U APPD. H.HASH IMOTO¿ 'j Q £= L & s n AP P D . <y E (MATERIAL MARK) MATED A (MATERIAL MARK) 0 0 ND I T I 0 N ( R E F . )

Contextual Info: LOC R E L E AS ED FOR PUBLICATION THIS DR AW IN G IS UNPUBLISHED. PTST REVISIONS BEJC ALL RIGHTS RESERVED. CO PYRIGHT LTR D2 REVISED PER ECQ-11-005140 30MAR11 APVD Dun DATE DESCRIPTION RK HMR D D — ? CCAVI TY MARK ^ T T -5? h K CTRADE MARK) * A o

Contextual Info: iiszotrs ’ ON 0 NIMVMQ 4 # m & I N D E N T I F I C A T I ON MARK(N0TE1 ) O • • H<- T ±0. 05 0.4 = -—< (PITCH) «= - ±0.15 c ±o. 1 - 5» D ±o. l E DOF —0 —212 F ( 05. 08? Ed N0TE1. IDENTIFICATION m MARK RECOGNIZED F ROM

mark 5503 MOSFET

Abstract: m233 transistor TH-3 TH-4 TH-6 transistor m236
Contextual Info: / Dimensions mm Lead-1 Lead-1 A Lead-2 Lead-2A Lead-3 Lead-3A Voltage dass, Lot No. 'A \ aO.E 25 min. Lead-4 Cathode mark class, Lot No. 03.0 5.0 ^ \ 00.8 Cathode mark / 25 min. 28 min. Lead-5A Voltage class, Lot No. -1*4- 5.0 03.0 28 min. Lead-6 Voltage dass, Lot No.

Contextual Info: LTR REVISIO N DATE RELEASED APPD 05-23-03 iRN ANODE MARK .148 [3.81 CRN ANODE MARK- 2X .059 [1.5] .079 [2.0] .016 J [0.4] SUGGESTED PAD LAYOUT NOTES: 1. 7 INCH R E EL 2. A L L 3. - DIMS ARE TOLERANCE 3000 PIEC ES PER R E EL IN INCHES MILLIMETERS . IS ±.010' (±0.25mm) UNLESS

FYMG1211C-TR

Abstract: ltt2 251C
Contextual Info: 3 # # [ E * SYM. S-No. : 025071 K tt Í ZONE I ♦ REVISIONS REV. NO. _ G1. 18 A in * * * B ft DATE NTF. NO. REV. BY A »rBSÈfi- 2 0 0 6 . A I - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3: 7 / - F

Contextual Info: 4 THIS DRAWING COPYRIGHT S 2 UNPUBLISHED. RELEASED R E V IS IO N S FOR PUBLICATION ALL RIGHTS RESERVED. By - LTR DESCRIPTION L1 REVISED PER DATE E C O -11-005030 MAR1 DWN A PV D RK HMR D D DIE ID EN T IF IC A T IO N MARK TRADE MARK 0,2 SQUARE (170037-9 ONLY)