MARK KO DIODE Search Results

IC NE564

Abstract: NE564 fsk ne564 AN179 50MHz VCO schematic iE25
Contextual Info: INTEGRATED CIRCUITS AN179 Circuit description of the NE564 1991 Dec Philips Semiconductors Philips Semiconductors Application note Circuit description of the NE564 AN179 diode voltage. Good high frequency performance for Q2 and Q3 is achieved with current levels in the low mA range. Current-source

Contextual Info: TAPING STYLE OF K & T-PACK TYPE DIODES DIMENSIONS OF TAPING K-PACK STYLE Symbol Dimensions 6.8 ±0.1 B 10.1 ±0.1 Ko 2.8 ±0.1 P1 8.0 ±0.1 + Do + 1.5 ±0.1 Po 4.0 ± 0.1 E 1.75 ±0.1 P2 2.0 ±0.1 F 7.5 ±0.1 W1 13.3 ±0.1 W 16.0 ±0.3 T 0.2 ±0.05 K1 3.0 ±0.1

Contextual Info: HZU-LL Series Silicon Epitaxial Planar Zener Diodes for Hard Knee Low Noise HITACHI Features Low noise voltage approximately 1/3 to 1/10 lower than the HZU series . Temperature coefficient is approximately 1/2 lower than the HZU series. _ Vz-Iz characteristics are semi-logarithmic linear from Iz = InA to 1mA.

5252B

Abstract: Zener diode 81A
Contextual Info: MMBZ5221B-5252B SEM ICO NDUCTO R ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES • Small Package : SOT-23. MAXIMUM RATING Ta=25°C SYMBOL RATING CHARACTERISTIC p*D*

HRF302A

Abstract: 57fh b DIODE 3A do-214 Hitachi DSA00308
Contextual Info: ADE-208-244B Z HRF302A Silicon Schottky Barrier Diode for Rectifying Rev. 2 Nov.1994 Features Outline • Low forward voltage drop and suitable for high effifiency rectifying. • DO-214 is suitable for high density surface mounting and high speed assembly.

ED94

Abstract: h9406 PC354 E64380 PC354N PC354NT CY64
Contextual Info: PREPARED I SPEC. DATE: BY: SHA APPROVED BY: DATE: ED-9466 1B October 29. 1999 ELECTRONIC COMPO GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR PHOTOCOUPLER I No. MODEL I Business I OF’TO-ELECT= dealing name I No. PC354 1. These speciilcation sheets include materials protected under copyright of Sharp Corporation

E64380

Contextual Info: SW DEVICE SPEC. No. ED-96027A ISSUE September PAGE 13 Pages ELECTRONIC COMPONENTS GROUP SHARP CORPORATION REPRESENTATIVE SPECIFICATION OPTO-ELECTRONIC SPECIFICATION FOR 30, 1998 DMSION DEVICES Business dealing name PHOTOCOUPLER MODEL No. PC3H4 1. These specification sheets include materials protected

Contextual Info: TOSHIBA 5GUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE s r ; I J 7 A 7m wmr SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • § • • Repetitive Peak Reverse Voltage : Vr r m = 400V Average Output Rsctiiisd Currsnt ’ I q —5A

RM3C

Contextual Info: Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter VRM (V) Type No. RM 3 RM 3A RM 3B RM 3C RM 4Y RM 4Z RM 4 RM 4A RM 4B RM 4C I F (AV) (A) ( ) is with Heatsink 50Hz Half-cycle Sinewave Single Shot 150 400 600 800 1000

mark KO diode

Abstract: HITACHI HZS-LL
Contextual Info: HZS-LL Series Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise HITACHI AD E-208- 122A Z Rev 1 Features • Vz-Iz characteristics are Selnilogarithlnic linear from IZ= InA to llnA and have sharper breakdown knees in a low current region, and also lower YZ temperature coefficients .

transistor 1fp

Abstract: 52ga 414n 53m diode
Contextual Info: HÌLS1S1M/S2M/53M MINI MOLD TYPE PHOTO COUPLER • OUTLINE typ. ■ GENERAL DESCRIPTION The NJL5151M series are small package dual-in-line photo couplers, which consist of high power infrared emitting diode and high sensitve Si photo transistor. IL standards (File N o.E8256I)

MA4 diode

Contextual Info: 1T365 SONY. Silicon V ariable C apacitance Diode Description The 1T365 is a variable capacitance diode contained in super minature package, and used for electronic-tuning of BS tuner. Features • Super minature package • Small capacitance 0.7pF Typ. VR= 25V

Contextual Info: SONY CORP/COMPONENT PRODS 41E D 0302303 0G02flflQ D 1T362 SO NY. Silicon Variable Capacitance Diode T - o -7 - I ? Description 1T362 is a variable capacitance diode designed for electronic tuning UHF, VHF TV tuners and AFT circuits. A miniature package has

diode 1d8

Abstract: CMSZ5221B MARK AL SOT-323
Contextual Info: Central' CMSZ5221B THRU CMSZ5261B Semiconductor Corp. SURFACE MOUNT SUPERmini 275mW SILICON ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industri­ al, commercial, entertainment and computer

Contextual Info: 1T363 sony, Silicon Variable Capacitance Diode Package Outline Description The 1T363 is a variable capacitance diode designed for electronic tuning o f CATV tuner. A miniature package has been adopted to allow tuner miniaturization, while maintaining the same

DS446

Contextual Info: Ordering number : EN715D _D S-4 4 6 Silicon Epitaxial Planar Type Temperature Compensation Use Very High-Speed Sw itching Diode F eatu re s •Glass sleeve structure ■Power dissipation : P = 300mW max. • Interterminal capacitance : C = 3.0pF max.

Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2653,PS2654,PS2653L2,PS2654L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6-PIN PHOTOCOUPLER -NEPOC Series- DESCRIPTION The PS2653, PS2654, PS2653L2, PS2564L2 are optically coupled isolators containing a GaAs light emitting diode

ic 747

Abstract: TC9303AN tc9173p tc9174 IC 741 TC9174P TC9189f 4x7 SEGMENT LED DISPLAY TC9303 tfk4
Contextual Info: TOSHIBA-. E L E C T R O N I C DE DEl ‘ Ì C H 7 E 4 ? DGlflSDS ¿£i¿ DTS MICRO CONTROLLER CONTAINING HIGH VOLTAGE Unit in mm VACUUM FLUORESCENT INDICATION TUBE DRIVER TC9301AN is 4-bit CMOS micro controller for digital tuning system use having built-in

Contextual Info: T O SH IB A 3FWJ42N TOSHIBA SCHOTTKY BARRIER DIODE SCHOTTKY BARRIER TYPE 3 F W J 42 N HIGH SPEED RECTIFIER APPLICATIONS • • • Average Forward Current : Ip AV = 3.0A Low Forward Voltage : V f m ~ 0.37V (Max.) Repetitive Peak Reverse Voltage : V rrm = 30V

TERMISTOR 301

Abstract: TERMISTOR 200
Contextual Info: SLU302XR SONY. 160/140mW High Power Laser Diode with a Detachable Fiber Description SLU302XR is a high power laser diode based on the SLD302XT w ith a detachable fiber. Direct coupling to a fiber having an FC connector is possible w ithout any optical adjustment.

kluber

Abstract: KLUBER WOLFRACOAT C Thyristor BT 102 water cooled thyristor assembly kluber wolfracoat thyristor ys 150 017 NT102 295kW Thyristor ys 150 103 RC snubber thyristor design
Contextual Info: Technical Information Technische Erläuterungen Für schnelle Thyristoren wird hierzu empfohlen: - C, = 10.47 nF - R, entsprechend 7, = Fl, . C, = 1,0 . .2.0 ps - D, schnelle Diode Der Entladewiderstand R, darf niemals fehlen, weil sich sonst einige Daten der Thyristoren verschlechtern können, z.B. die kritische Spannungssteilheit dv/dt ,. Falls die Beschaltung den Verlauf des Steuerstroms nachteilig beeinflußt, so ist dies bei der Bemessung des

phototransistor OCP71

Abstract: OCP71 GTE175M GD150M gsa10 dekatron GC10D ScansU9X23 DIGITRON GR10A
Contextual Info: 141 C IR C U IT S Dekatron Circuits The recommended Dekatron drive and coupling circuits are given in the following pages together with a number of suitable pulse shaping circuits. Although in the majority of cases the Dekatron counter symbol has been used, the drive circuits are equally applic­

ESJA92

Abstract: ESJA92-10 T151 high voltage diode 100 kv esja 212es 12KV 2ma
Contextual Info: ESJ A92 1 O k v , 1 2 k V : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA92i±p ESJA92 is high reliability resin molded type high speed high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. : Features

EN2929

Contextual Info: O rdering num ber :EN2929 i 8 A Ñ Y O I SB10-03A2/SB10-03A3 No.2929 Schottky B arrier Diode 30V, 1.0A Rectifier A p p lic a tio n s • H igh frequency rectification sw itching regulators, converters, choppers F e a tu r e s •Low forward voltage (Vp max = 0.55V)