MARK H2 DIODE Search Results
MARK H2 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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| 9936/BCA | Rochester Electronics LLC | 9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
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| 54AC86/SDA-R | Rochester Electronics LLC | 54AC86/SDA-R - Dual marked (M38510R75202SDA) |
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MARK H2 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: HSU276-Silicon Schottky Barrier Diode for Tuner Mixer, Converter Outline Features • High forward current, Low capacitance. • Ultra small Eesin Package URP is suitable for surface mount design. Cathode mark Mark H2 1CE Ordering Information |
OCR Scan |
hsu276200pr | |
Mark V6
Abstract: mark h2 diode
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OCR Scan |
hvu365-----------variablehvu365100mhzmark v6+1 | |
HVD191Contextual Info: HVD191 Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator REJ03G0015-0100Z Rev.1.00 Apr.28.2003 Features • Low capacitance. C ≤ 0.37 pF • Low forward resistance. (rf ≤ 2.5 Ω) • Super small Flat Package (SFP) is suitable for surface mount design. |
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hvd191rej03g0015-0100z | |
diode h2.2Contextual Info: APE-208-017C Z HVU357 Variable Capacitance Diode for VCO HITACHI Features Preliminary Rev. 3 Feb.1993 Outline • Low series resistance. (rs=0.35Q max) • Ultra small Resin Eackage (URP) is suitable for surface mount design. Cathode mark I Mark c Ordering Information |
OCR Scan |
hvu357ape-208-017c470mhzdiode h2.2 | |
HVD191
Abstract: PUSF0002ZB-A MARK H2
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hvd191rej03g0015-0200pusf0002zb-amark h2 | |
T72 diode of 45 kvContextual Info: 1SS244 Diodes Switching diode 1SS244 zApplications High voltage switching General purpose rectification zExternal dimensions Unit : mm CATHODE BAND (BLACK) TYPE NO. (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 2 4 4 2.7±0.3 |
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1ss244do-34t72 diode of 45 kv | |
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Contextual Info: RB441Q-40 Diodes Schottky barrier diode RB441Q-40 zApplications Low current rectification zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) Low VF, Low IR 3) High reliability S 3 |
Original |
rb441q-40do-34 | |
1SS133
Abstract: do-34 rohm
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Original |
1ss133do-34do-34 rohm | |
RB721Q-40
Abstract: T-77 ROHM RB721Q
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rb721q-40do-34t-77rohm rb721q | |
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Contextual Info: RB441Q-40 Diodes Schottky barrier diode RB441Q-40 zApplications Low current rectification zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) Low VF, Low IR 3) High reliability S 3 |
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rb441q-40do-34 | |
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Contextual Info: RB160A40 Diodes Schottky barrier diode RB160A40 zApplications General rectification z External dimensions Unit : mm φ0.4±0.1 zFeatures 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low IR. 4) High ESD. 2.7±0.3 T-31 29±1 T-31 29±1 φ1.8±0.2 |
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rb160a40 | |
1SS133 T-77Contextual Info: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction |
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1ss133do-341ss133 t-77 | |
marking code fairchild
Abstract: 1N4738A fairchild
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1n4728a1n4758ado-411n4729a+5 | |
GENERAL SEMICONDUCTOR SM 3b diode
Abstract: 1n5224b fsc 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B
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1n5221b1n5263bdo-351n5222b+8 | |
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MTZJ6.8BContextual Info: MTZJ6.8B Diodes Zener diode MTZJ6.8B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1 |
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do-34mtzj6.8b | |
MTZJ16B
Abstract: mtzj 158
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mtzj16bdo-34mtzj 158 | |
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Contextual Info: MTZJ6.2B Diodes Zener diode MTZJ6.2B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1 |
Original |
do-34 | |
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Contextual Info: MTZJ3.6B Diodes Zener diode MTZJ3.6B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1 |
Original |
do-34 | |
MTZJ33B
Abstract: MTZJ4.7B pf 5b g1
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Original |
mtzj33bdo-34mtzj4.7bpf 5b g1 | |
MTZJ18B
Abstract: MTZJ18B T-77
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mtzj18bdo-34mtzj18b t-77 | |
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Contextual Info: MTZJ5.1B Diodes Zener diode MTZJ5.1B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1 |
Original |
do-34 | |
MTZJ4.7B
Abstract: zener DIODE 16B 46
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do-34mtzj4.7bzener diode 16b 46 | |
pf 5b g1Contextual Info: MTZJ7.5B Diodes Zener diode MTZJ7.5B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1 |
Original |
do-34pf 5b g1 | |
MTZJ20B
Abstract: MTZJ ZENER DIODE 47 349P DIODE MTZJ-10B
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mtzj20bdo-34mtzjzener diode 47+2 | |