MARK H2 DIODE Search Results
MARK H2 DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet | ||
CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet |
MARK H2 DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: HSU276-Silicon Schottky Barrier Diode for Tuner Mixer, Converter Outline Features • High forward current, Low capacitance. • Ultra small Eesin Package URP is suitable for surface mount design. Cathode mark Mark H2 1CE Ordering Information |
OCR Scan |
HSU276 HSU276 200pr | |
Mark V6
Abstract: mark h2 diode
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OCR Scan |
HVU365-----------Variable HVU365 100MHz Mark V6 mark h2 diode | |
HVD191Contextual Info: HVD191 Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator REJ03G0015-0100Z Rev.1.00 Apr.28.2003 Features • Low capacitance. C ≤ 0.37 pF • Low forward resistance. (rf ≤ 2.5 Ω) • Super small Flat Package (SFP) is suitable for surface mount design. |
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HVD191 REJ03G0015-0100Z HVD191 | |
diode h2.2Contextual Info: APE-208-017C Z HVU357 Variable Capacitance Diode for VCO HITACHI Features Preliminary Rev. 3 Feb.1993 Outline • Low series resistance. (rs=0.35Q max) • Ultra small Resin Eackage (URP) is suitable for surface mount design. Cathode mark I Mark c Ordering Information |
OCR Scan |
HVU357 APE-208-017C 470MHz HVU357 diode h2.2 | |
HVD191
Abstract: PUSF0002ZB-A MARK H2
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HVD191 REJ03G0015-0200 PUSF0002ZB-A HVD191 PUSF0002ZB-A MARK H2 | |
T72 diode of 45 kvContextual Info: 1SS244 Diodes Switching diode 1SS244 zApplications High voltage switching General purpose rectification zExternal dimensions Unit : mm CATHODE BAND (BLACK) TYPE NO. (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 2 4 4 2.7±0.3 |
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1SS244 DO-34 T72 diode of 45 kv | |
Contextual Info: RB441Q-40 Diodes Schottky barrier diode RB441Q-40 zApplications Low current rectification zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) Low VF, Low IR 3) High reliability S 3 |
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RB441Q-40 DO-34 | |
1SS133
Abstract: do-34 rohm
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1SS133 DO-34 1SS133 do-34 rohm | |
RB721Q-40
Abstract: T-77 ROHM RB721Q
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RB721Q-40 DO-34 RB721Q-40 T-77 ROHM RB721Q | |
Contextual Info: RB441Q-40 Diodes Schottky barrier diode RB441Q-40 zApplications Low current rectification zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) Low VF, Low IR 3) High reliability S 3 |
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RB441Q-40 DO-34 | |
Contextual Info: RB160A40 Diodes Schottky barrier diode RB160A40 zApplications General rectification z External dimensions Unit : mm φ0.4±0.1 zFeatures 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low IR. 4) High ESD. 2.7±0.3 T-31 29±1 T-31 29±1 φ1.8±0.2 |
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RB160A40 | |
1SS133 T-77Contextual Info: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction |
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1SS133 DO-34 1SS133 T-77 | |
marking code fairchild
Abstract: 1N4738A fairchild
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1N4728A 1N4758A 1N4758A DO-41 1N4729A 1N4730A 1N4731A 1N4732A marking code fairchild 1N4738A fairchild | |
GENERAL SEMICONDUCTOR SM 3b diode
Abstract: 1n5224b fsc 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B
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1N5221B 1N5263B DO-35 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B GENERAL SEMICONDUCTOR SM 3b diode 1n5224b fsc 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B | |
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MTZJ6.8BContextual Info: MTZJ6.8B Diodes Zener diode MTZJ6.8B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1 |
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DO-34 MTZJ6.8B | |
MTZJ16B
Abstract: mtzj 158
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MTZJ16B DO-34 MTZJ16B mtzj 158 | |
Contextual Info: MTZJ6.2B Diodes Zener diode MTZJ6.2B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1 |
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DO-34 | |
Contextual Info: MTZJ3.6B Diodes Zener diode MTZJ3.6B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1 |
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DO-34 | |
MTZJ33B
Abstract: MTZJ4.7B pf 5b g1
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MTZJ33B DO-34 MTZJ33B MTZJ4.7B pf 5b g1 | |
MTZJ18B
Abstract: MTZJ18B T-77
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MTZJ18B DO-34 MTZJ18B MTZJ18B T-77 | |
Contextual Info: MTZJ5.1B Diodes Zener diode MTZJ5.1B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1 |
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DO-34 | |
MTZJ4.7B
Abstract: zener DIODE 16B 46
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DO-34 MTZJ4.7B zener DIODE 16B 46 | |
pf 5b g1Contextual Info: MTZJ7.5B Diodes Zener diode MTZJ7.5B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1 |
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DO-34 pf 5b g1 | |
MTZJ20B
Abstract: MTZJ ZENER DIODE 47 349P DIODE MTZJ-10B
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MTZJ20B DO-34 MTZJ20B MTZJ ZENER DIODE 47 349P DIODE MTZJ-10B |