MARK GG Search Results

cmos Quartz 32768hz

Abstract: UM3217 PIEZO BUZZER DRIVER STOPWATCH 8 DIGIT 7 segment display p 521 ic 4 digit lcd display for watch Unicorn Microelectronics lcd UM3161 piezoelectric buzzer 12V digit watch ic
Contextual Info: UNICORN M I CR OE LECT RO NICS TSTÛTaa GQOlbBQ M I EME D 5 i U 1 = % / = ? 3 » ^3 5 = 5 i Y S I ^ UM3217 6-Digit Multifunction Watch P R E L IM IN A R Y Features • Single 1.5 volt battery operation ■ 32768Hz quartz crystal time base * 6-digit LC D with 7-day mark, AM/PM mark, date mark,

NEh jJ8

Abstract: k30270 LB 11911 095275-VK20BA ue09 KM 7-C 1 UF -20 100V 74S83 S0807 74LS32N z3ans
Contextual Info: R E V IS IO N S DESCRIPT'ON » * * LTR MARK AM*« P iK PXÛC1S1 Z v cmpcz procgsz z. 2 PL J L MARK PEU PE0C£5S J p 6 H A A # i WAS 9?Z7£9-toZW E 6 m * T £ D * £ / i £ r £ t d i0 £ # i/ tty * * ¡è k w - ¿ A J 4 0 1 6 9 / & J / O / i. — to * D D £ D

H1F mark

Contextual Info: Header Straight Type / - Clearance Hole for cleaning • Without Clearance Hole: No Board Cleaning Type • With Clearance Hole: Board Cleaning Type Polarization Mark \ fin 50 <= I '. CL 670-1201-8 H IF 7C-40PA-1.27DSA

diode BA170

Abstract: BA170 BA170 diode ITT diode lsi BA170
Contextual Info: ITT SEMICOND/ INTERNETALL SÜE ]> • MbflS?!! GGOBTM? L3b M I S I BA170 'T-Ol-0‘1 Silicon Epitaxial Planar Diode for universal use in consumer electronic and for switching applications max. 1.9 0 T \ Cathode Mark m a x . 0 .5 2 <3 This diode is delivered taped.

AMD Athlon 64 X2 5000

Abstract: AMD Athlon 64 X2 amd athlon 64 MOTHERBOARD SERVICE MANUAL AMD Athlon 64 X2 4800 amd athlon II x2 sil3531 Asus MOTHERBOARD SERVICE MANUAL VT6308 connection diagram AMD Athlon 64 X2 30579
Contextual Info: AMD Processor Performance Evaluation Guide Mark W. Welker Johann Pais Advanced Micro Devices, Inc. One AMD Place Sunnyvale, CA 94088 Publication #: 30579 Issue Date: March 2007 Revision: 3.74 2003 - 2007 Advanced Micro Devices, Inc. All rights reserved.

LM309K

Abstract: nsc marking QML MARKING DETAILS 40 lead ceramic flatpack ALPHA YEAR DATE CODE 5962-9553601QPA LM7171AMJ-QML top marking codes CERAMIC FLATPACK ALPHA YEAR CODE
Contextual Info: N Top Marking Information for Mil/Aero Products TOP MARK INFORMATION Not all marks shown may appear on parts 883 883&&38510 38510Date DateCode Code 2nd Last 2nddigit: digit: Lastdigit digitof ofthe theyear yearwafer wafersort sortwas wasperformed. performed.

MTD6180

Abstract: MTE1070A
Contextual Info: I flE D 5 7 ^ 5 5 GGD04Q4 4 PHOTO TRANSISTOR MARK TECH INTERNATIONAL MTD6180 SILICON NPN EPITAXIAL PLANAR - I— t 1 I SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR u S fc d J K' L M APPLICATIONS • OPTICAL SWITCH F —H • INTER R U PTER 1. EMITTER 2. COLLECTOR

TF411

Abstract: t2222 PN2222A le TF-411
Contextual Info: ggM C O N O U C TO R PN2222A MMBT2222A PZT2222A SOT-23 SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Pro­ cess 19. Absolute Maximum RâtinÇjS

GP145

Abstract: MGF0915A PO36 MGF0915 fet GP145
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES

MGF0914A

Abstract: fet 4901 0648
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0914A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES

uhf 1kw amplifier

Abstract: MGF0916A
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES

MGF0913A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] OUTLINE DRAWING DESCRIPTION Unit:mm Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES

D043

Abstract: SML-LX1206UPGC-TR
Contextual Info: UNCONTROLLED DOCUMENT -—I - 2.00 [0 .0 7 9 ] REV. A CATHODE MARK 1,60 [0,063] SML-LX1206UPGC-TR A E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. #10814. 12.3.01 1El R0.40 [R0.016] 2 P L S J ELECTRO-OPTICAL CHARACTERISTICS Ta =25X CATHODE

Contextual Info: GaAs IC SPST Switch With Integral Driver Non-Reflective DC-4 GHz ESAlpha AK004M1-11 -11 Features • Integral Driver ±5 V Supply Voltages ■ High Isolation, Non-Reflective ORIENTATION MARK 0.180 4.57 mm SQ. MAX. ■ 8 Lead Hermetic Surface Mount Package

EM16SG

Contextual Info: Surface Mount LED 1,6x0,8 mm EMIG-SERIES 7197 Notes: 1. All dimensions are in millimeters inches . 2. Tolerance is +0.25 (0.01) unless otherwise noted. 3 Specifications are subjected to change without notice SG t SR Orientation Mark 08(031) 1.6 (.063) w 4

Contextual Info: IL 5-ñ B J& & REV. EZi6£ors 3t' M . F*3 & DESCRIPTION DON NO. DATE à m il ÜÉ CHK. $1 H DR. APPD. gg APPD. ‘ON Q N I M V Ü Q # # M ü CONTACTS No. :30, 50, 70 CONTACTS No. :40, 60, 80, 100, 120 CAVITY MARK n COMPANY LOGO it# POLARIZING KEY ±0-

MGF0913A

Abstract: 1709-1
Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD OUTLINE DRAWING DESCRIPTION non - matched ] urnt: Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES

MAAM23000A1

Abstract: MMIC hk MAAM23000-A1
Contextual Info: Afa Advanced Information Low Noise GaAs MMIC Amplifier 2 -3 GHz Features CR-3 • 1.3 dB Typical Noise Figure • 26 dB Typical Gain • DC Decoupled RF Input and Output • No External Components Required • Small, 8 Lead Ceramic Package1 ORIENTATION MARK

Contextual Info: GaAs 1C SPST Switch With Integral Driver Reflective DC-4 GHz ESAlpha AK004R1-11 Features • Integral Driver ±5 V Supply Voltages -11 ORIENTATION MARK 0.180 4.57 mm SQ . MAX. ■ Reflective ■ 8 Lead Hermetic Surface Mount Package ■ Capable of Meeting MIL-STD

marking 82T

Abstract: ifw 04 Collmer Semiconductor marking code 214 Seaf ERA84-009 Diode era84 era-84
Contextual Info: ERA84-009 1A • Outline Drawing SCHOTTKY BARRIER DIODE ■ Marking ■ Features • Lo w V f Color code : Blue • Super high speed switching • High reliability by planer design , Voltage class ■ Applications -8 8 ro * 8 * * if Cathode mark Lot No.

D4D-1187N omron

Abstract: D4D-2132 5522n 5532N D4D-1A22N D4D-5532N D4D-5522N D4D-2A22N D4D-3180N D4D-6A32N
Contextual Info: D4D-jN Limit Switch Small, Economical Switch Featuring a Positive Opening Mechanism and Conforming to the CE Mark Features positive opening mechanism NC contacts only that opens contacts, thus preventing faulty operation due to factors such as metal deposition. (Slow-action type has received positive

5532N

Abstract: D4D-5562N D4D-1520N D4D-2120N 6132N D4D-1A22N ul listed conduit D4D-6A20N D4D-5532N D4D-1A87N
Contextual Info: D4D-jN Limit Switch Small, Economical Switch Featuring a Positive Opening Mechanism and Conforming to the CE Mark Features positive opening mechanism NC contacts only that opens contacts, thus preventing faulty operation due to factors such as metal deposition. (Slow-action type has received positive

D043

Abstract: SML-LX1206USBC-TR
Contextual Info: PART NUMBER REV. SM L-LX1206USBC-TR A UNCONTROLLED DOCUMENT -—I- 2.00 [0.079] REV. A CATHODE MARK 1,60 [0,063] E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10814. DATE 12.3.01 + H 1El R0.40 [R0.016] 2 P L S J ANODE ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X

Contextual Info: GaAs 1C SPST FET Switch Low Loss With Integral Driver Reflective DC-4 GHz ESAlpha AK004L1-11 -11 Features • Integral Driver ±5 V Supply Voltages ■ Low Loss, Reflective ORIENTATION MARK 0.180 4.57 mm SQ. MAX. ■ 8 Lead Hermetic Surface Mount Package