MARK AE Search Results

Hitachi DSA00772

Abstract: HSE11
Contextual Info: AED-208-162A Z HSE11 GaAs Schottky Barrier Diode for SHF Mixer Rev. 1 Sep. 1994 Features Outline • Low noise GaAs schottky. • Low capacitance. (C =0.4pF max) Cathode mark 1 Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP 2 1. Cathode

HSE11

Abstract: 27ma
Contextual Info: AED-208-162A Z HSE11 GaAs Schottky Barrier Diode for SHF Mixer HITACHI Features Rev. 1 Sep. 1994 Outline • Low noise GaAs schottky. • Low capacitance. (C =0.4pF max) Cathode mark Ordering Information Type No. M ark Package Code HSE11 Cathode mark ERP

Contextual Info: SURGE SUPPRESSOR DIODE DAM1MB FEATURES OUTLINE DRAWING • High transient reverse power capability suitable for protecting automobile electronic components etc. Direction of polarity Unit in mm inch Type mark Lot mark 1.5 (0.06) 2.5 (0.1) B27 BN Cathode band

What is the ad557

Abstract: AD557 AD557JN AN1222 HC05 HC08
Contextual Info: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1222/D AN1222 Arithmetic Waveform Synthesis with the HC05/08 MCUs by Mark McQuilken & Mark Glenewinkel CSIC Applications INTRODUCTION IThis application note is intended to demonstrate the use of Arithmetic Synthesis to create sinusoidal

DSM3MA2

Abstract: DSM3MA1 DSM3MA4 hitachi rectifier Hitachi DSA00276 Hitachi DSA00276599.
Contextual Info: GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark DC S A 4 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band 0.2MAX (0.008) 2.5 (0.1)

BD6020GU

Abstract: BD6030GLS
Contextual Info: CCD camera negative power supply LSI BD6030GLS Dimension Unit : mm 0.3±0.1 1PIN MARK 3.0±0.1 1PIN MARK 0.38 4 3 2 1 Features 1) Built-in negative voltage LDO(-8V/-7V select) 2) Thermal shut down function(Auto-reset type) 3) Small and thin package of FLGA12V3

565FHE

Contextual Info: RENESAS Code PLBG0565KA-A w S B JEITA Package Code P-LFBGA565-15x15-0.50 D Previous Code 565FHE w S A MASS[Typ.] 0.6g φb A A1 φx M S AB ZD e e A ×4 y S v Index mark Laser mark S B ZE E AH AG AF AE AD AC AB AA Y W V U T R P N M L K J H G F E D C B A Reference

Contextual Info: RENESAS Code PLBG0513KB-A w S B JEITA Package Code P-LFBGA513-15x15-0.50 D Previous Code 513FHE w S A MASS[Typ.] 0.6g φb A A1 φx M S AB ZD e e A ×4 y S v Index mark Laser mark S B ZE E AH AG AF AE AD AC AB AA Y W V U T R P N M L K J H G F E D C B A Reference

Tyco PBT-GF10

Contextual Info: Bem. note Merkmal feature MATERIAL IDENTIFICATION CODE ACC.VDA260 Materialkennzeichnung nach VDA260 DATA CLOCK Datumsuhr CAVITY MARK Nestmarkierung FCI COMPANY LOGOTYP FCI Firmenlogo CAVITY-NO. Kammernummrierung REVISION INDEX SEE TABLE Aenderungsindex siehen Tabelle

Contextual Info: Bem. note Merkmal feature MATERIAL IDENTIFICATION CODE ACC.VDA260 Materialkennzeichnung nach VDA260 DATA CLOCK Datumsuhr CAVITY MARK Nestmarkierung MVL COMPANY LOGOTYP MVL Firmenlogo CAVITY-NO. Kammernummrierung REVISION INDEX SEE TABLE Aenderungsindex siehen Tabelle

Contextual Info: • san co 1/1 CO cñ Ai A* o 2CTABLE 2 M/ - K 7 - 0 TRADE MARK l-M c r h- -AMP X 1 OR LLi -+AMP MANUFACTURING PLACE AMP - JAPAN + <$ OR AMP CHAINA(PRC) lAM P X t t OR AMP KOREA ? ‘ 1 .25±0.05 OIA I .401:0.05 DIA K U <U3*: CTRADE MARK) (HOLE OI Al.25*0.05PUNCHED HOL

Tyco PBT-GF10

Abstract: PBT-GF10 PBTgf10 connector
Contextual Info: Bem. note Merkmal feature MATERIAL IDENTIFICATION CODE ACC.VDA260 Materialkennzeichnung nach VDA260 33.3 DATA CLOCK Datumsuhr CAVITY MARK Nestmarkierung MVL COMPANY LOGOTYP MVL Firmenlogo 35.0 CAVITY-NO. Kammernummrierung REVISION INDEX SEE TABLE Aenderungsindex siehen Tabelle

P729F5-100-NN9-1

Abstract: 729-Pin BE117
Contextual Info: 729-PIN PLASTIC BGA FLIP CHIP TYPE (29x29) ZE D w S A ZD A 27 25 23 21 19 B E1 17 15 E 13 11 INDEX MARK 9 7 5 3 1 D1 w S B 26 24 22 20 18 16 14 12 10 8 6 4 2 AG AE AC AA W U R N L J G E C A AF AD AB Y V T P M K H F D B INDEX MARK A y1 (UNIT:mm) A2 S S y S

LM309K

Abstract: nsc marking QML MARKING DETAILS 40 lead ceramic flatpack ALPHA YEAR DATE CODE 5962-9553601QPA LM7171AMJ-QML top marking codes CERAMIC FLATPACK ALPHA YEAR CODE
Contextual Info: N Top Marking Information for Mil/Aero Products TOP MARK INFORMATION Not all marks shown may appear on parts 883 883&&38510 38510Date DateCode Code 2nd Last 2nddigit: digit: Lastdigit digitof ofthe theyear yearwafer wafersort sortwas wasperformed. performed.

RSS060P05

Contextual Info: RSS060P05FRA RSS060P05 Transistor 4V Drive Pch MOSFET AEC-Q101 Qualified RSS060P05 RSS060P05FRA zDimensions Unit : mm zStructure Silicon P-channel MOSFET SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Built-in G-S Protection Diode.

msp430f5438 USCI examples

Abstract: MSP430x5xx CPU clock frequency MSP430x2xx Code Example for MSP430x4xx ADC12MEM MSP430x5xx MSP430x5xx Family Users Guide msp430 "real-time clock" refo slau208 slaa395
Contextual Info: Application Report SLAA395 – June 2008 MSP430x5xx Quick Start Guide Mark Smertneck . MSP430 Applications ABSTRACT This quick start guide is intended to assist existing users of the MSP430 line of

Contextual Info: RTQ025P02FRA RTQ025P02 Transistor AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTQ025P02FRA RTQ025P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (1) (2) 0~0.1 (3) 1pin mark

TAS3204

Contextual Info: Application Report SLEA068 – May 2007 TAS3204 Low Power Operation Mark Watts . Mixed Signal Audio/Video ABSTRACT For portable or other power-sensitive applications, it may be desirable to decrease the

Contextual Info: RSQ035N03FRA RSQ035N03 Transistors 4V Drive Nch MOS FET AEC-Q101 Qualified RSQ035N03 RSQ035N03FRA zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) (1) 1pin mark 0.16 0.4 zApplications

Contextual Info: RTQ035N03FRA RTQ035N03 Transistors 2.5V Drive Nch MOS FET AEC-Q101 Qualified RTQ035N03FRA RTQ035N03 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (1) (2) (3) 1pin mark 0.16

RSQ035P03

Abstract: RSQ035P03 TR
Contextual Info: RSQ035P03FRA RSQ035P03 Transistor AEC-Q101 Qualified 4V Drive Pch MOS FET RSQ035P03FRA RSQ035P03 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) (1) 1pin mark 0.4 0~0.1 (3)

BY100

Abstract: mark US CS127
Contextual Info: CS127-1 + Electrodes B _ C Cathode Mark Dimensions in inches [mm] Give us a call at 888-641-SEMI 7364 A Square web: http://www.aeroflex.com/metelics, email: metelics-sales@aeroflex.com Symbol Dimension A Inches (mm) Dimension B Inches (mm) Dimension C Inches (mm)

Contextual Info: RTQ030P02FRA RTQ030P02 Transistor AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTQ030P02FRA RTQ030P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) (1) 0~0.1 (3) 1pin mark

Contextual Info: RTQ035P02FRA RTQ035P02 Transistor AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTQ035P02FRA RTQ035P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) (1) 0~0.1 (3) 1pin mark