MARK AE Search Results

Hitachi DSA00772

Abstract: HSE11
Contextual Info: AED-208-162A Z HSE11 GaAs Schottky Barrier Diode for SHF Mixer Rev. 1 Sep. 1994 Features Outline • Low noise GaAs schottky. • Low capacitance. (C =0.4pF max) Cathode mark 1 Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP 2 1. Cathode

What is the ad557

Abstract: AD557 AD557JN AN1222 HC05 HC08
Contextual Info: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1222/D AN1222 Arithmetic Waveform Synthesis with the HC05/08 MCUs by Mark McQuilken & Mark Glenewinkel CSIC Applications INTRODUCTION IThis application note is intended to demonstrate the use of Arithmetic Synthesis to create sinusoidal

DSM3MA2

Abstract: DSM3MA1 DSM3MA4 hitachi rectifier Hitachi DSA00276 Hitachi DSA00276599.
Contextual Info: GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark DC S A 4 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band 0.2MAX (0.008) 2.5 (0.1)

BD6020GU

Abstract: BD6030GLS
Contextual Info: CCD camera negative power supply LSI BD6030GLS Dimension Unit : mm 0.3±0.1 1PIN MARK 3.0±0.1 1PIN MARK 0.38 4 3 2 1 Features 1) Built-in negative voltage LDO(-8V/-7V select) 2) Thermal shut down function(Auto-reset type) 3) Small and thin package of FLGA12V3

565FHE

Contextual Info: RENESAS Code PLBG0565KA-A w S B JEITA Package Code P-LFBGA565-15x15-0.50 D Previous Code 565FHE w S A MASS[Typ.] 0.6g φb A A1 φx M S AB ZD e e A ×4 y S v Index mark Laser mark S B ZE E AH AG AF AE AD AC AB AA Y W V U T R P N M L K J H G F E D C B A Reference

Contextual Info: RENESAS Code PLBG0513KB-A w S B JEITA Package Code P-LFBGA513-15x15-0.50 D Previous Code 513FHE w S A MASS[Typ.] 0.6g φb A A1 φx M S AB ZD e e A ×4 y S v Index mark Laser mark S B ZE E AH AG AF AE AD AC AB AA Y W V U T R P N M L K J H G F E D C B A Reference

Contextual Info: Bem. note Merkmal feature MATERIAL IDENTIFICATION CODE ACC.VDA260 Materialkennzeichnung nach VDA260 DATA CLOCK Datumsuhr CAVITY MARK Nestmarkierung MVL COMPANY LOGOTYP MVL Firmenlogo CAVITY-NO. Kammernummrierung REVISION INDEX SEE TABLE Aenderungsindex siehen Tabelle

Tyco PBT-GF10

Abstract: PBT-GF10 PBTgf10 connector
Contextual Info: Bem. note Merkmal feature MATERIAL IDENTIFICATION CODE ACC.VDA260 Materialkennzeichnung nach VDA260 33.3 DATA CLOCK Datumsuhr CAVITY MARK Nestmarkierung MVL COMPANY LOGOTYP MVL Firmenlogo 35.0 CAVITY-NO. Kammernummrierung REVISION INDEX SEE TABLE Aenderungsindex siehen Tabelle

P729F5-100-NN9-1

Abstract: 729-Pin BE117
Contextual Info: 729-PIN PLASTIC BGA FLIP CHIP TYPE (29x29) ZE D w S A ZD A 27 25 23 21 19 B E1 17 15 E 13 11 INDEX MARK 9 7 5 3 1 D1 w S B 26 24 22 20 18 16 14 12 10 8 6 4 2 AG AE AC AA W U R N L J G E C A AF AD AB Y V T P M K H F D B INDEX MARK A y1 (UNIT:mm) A2 S S y S

LM309K

Abstract: nsc marking QML MARKING DETAILS 40 lead ceramic flatpack ALPHA YEAR DATE CODE 5962-9553601QPA LM7171AMJ-QML top marking codes CERAMIC FLATPACK ALPHA YEAR CODE
Contextual Info: N Top Marking Information for Mil/Aero Products TOP MARK INFORMATION Not all marks shown may appear on parts 883 883&&38510 38510Date DateCode Code 2nd Last 2nddigit: digit: Lastdigit digitof ofthe theyear yearwafer wafersort sortwas wasperformed. performed.

circuit diagram of smart home alarm system

Abstract: wireless hart protocol msp430, digital filtering BlueCore 4 BlueCore 5 traffic light controller BlueCore 4 datasheet CMOS 45nm wireless transducer/sensor wireless hart
Contextual Info: Making the Case for Plug & SenseSM Networks Mark Jakusovszky and David Kerwin Aeroflex Colorado Springs jakusovszky@aeroflex.com We Connect the REAL World to the Digital World Overview W Macro Trends W Classic Sensor Network Architecture W Plug & Sense Network Architecture

RSS060P05

Contextual Info: RSS060P05FRA RSS060P05 Transistor 4V Drive Pch MOSFET AEC-Q101 Qualified RSS060P05 RSS060P05FRA zDimensions Unit : mm zStructure Silicon P-channel MOSFET SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Built-in G-S Protection Diode.

Contextual Info: RTQ025P02FRA RTQ025P02 Transistor AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTQ025P02FRA RTQ025P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (1) (2) 0~0.1 (3) 1pin mark

Contextual Info: RSQ035N03FRA RSQ035N03 Transistors 4V Drive Nch MOS FET AEC-Q101 Qualified RSQ035N03 RSQ035N03FRA zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) (1) 1pin mark 0.16 0.4 zApplications

RSQ035P03

Abstract: RSQ035P03 TR
Contextual Info: RSQ035P03FRA RSQ035P03 Transistor AEC-Q101 Qualified 4V Drive Pch MOS FET RSQ035P03FRA RSQ035P03 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) (1) 1pin mark 0.4 0~0.1 (3)

BY100

Abstract: mark US CS127
Contextual Info: CS127-1 + Electrodes B _ C Cathode Mark Dimensions in inches [mm] Give us a call at 888-641-SEMI 7364 A Square web: http://www.aeroflex.com/metelics, email: metelics-sales@aeroflex.com Symbol Dimension A Inches (mm) Dimension B Inches (mm) Dimension C Inches (mm)

Contextual Info: RTQ030P02FRA RTQ030P02 Transistor AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTQ030P02FRA RTQ030P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) (1) 0~0.1 (3) 1pin mark

Contextual Info: RTQ035P02FRA RTQ035P02 Transistor AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTQ035P02FRA RTQ035P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) (1) 0~0.1 (3) 1pin mark

Contextual Info: RTQ045N03 RTQ045N03FRA Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RTQ045N03 RTQ045N03FRA zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 0.7 (4) 1.6 2.8 (5) (2) (1) 0~0.1 (3) 1pin mark 0.16 0.4

Contextual Info: SP8J1FRA SP8J1 Transistors AEC-Q101 Qualified 4V Drive Pch+Pch MOS FET SP8J1 SP8J1FRA zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET SOP8 5.0 1.75 0.4 (5) (1) (4) 0.2 1.27 1pin mark Each lead has same dimensions zApplications Power switching

KRA355

Abstract: marking AE package marking ae AE MARKING
Contextual Info: SEMICONDUCTOR KRA355 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 AE 1 2 Item Marking Description Device Mark AE KRA355 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: RSQ030P03FRA RSQ030P03 Transistor AEC-Q101 Qualified 4V Drive Pch MOS FET RSQ030P03FRA RSQ030P03 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) (1) 0~0.1 (3) 1pin mark 0.16

10889241

Contextual Info: NOTES / Bemerkungen CONDITION BY DELIVERY TPA IN PRELOCKED POSITION Lieferzustand TPA in Vorraststellung B-B MATERIAL IDENTIFICATION CODE ACC.VDA260 Materialkennzeichnung nach VDA260 DATA CLOCK Datumsuhr 32.3+0.1 -0.3 CAVITY MARK Nestmarkierung MVL COMPANY LOGOTYP

Contextual Info: SP8J2FRA SP8J2 Transistors AEC-Q101 Qualified 4V Drive Pch+Pch MOS FET SP8J2 SP8J2FRA zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET SOP8 5.0 1.75 0.4 (5) (1) (4) 0.2 1.27 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Low On-resistance. (57mΩ at 4.5V)