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    MARK 3A Search Results

    MARK 3A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SOT23 MARK Y2

    Abstract: BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A
    Contextual Info: Nominal Zener Voltage 'Note 1 250 mW 250 mW 250 mW 250 mW 350 mW Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Mark Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Marik Cathode = Polarity Mark (‘ Notes 2.3,14) ('Notes 2,3,18) (•Notes 2,3,18)


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    DO-204AH DO-35) OT-23 O-236AA/AB) MLL4678 MLL4679 MLL4680 L4681 MLL4682 SOT23 MARK Y2 BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A PDF

    circuit diagram of pedometer

    Abstract: MEMS digital compass pedometer Texas Instruments GPS Inertial navigation system Magneto-inductive Displacement Sensors reckoning circuit diagram for wireless headsets mems pedometer pdf on Pedestrian Detection
    Contextual Info: Dead Reckoning for Consumer Electronics Mark Amundson, Honeywell BIOGRAPHY Mark D. Amundson P.E. is the applications engineer for Honeywell Magneto-Resistive sensor products at the Honeywell Solid State Electronics Center in Plymouth Minnesota. He has worked on many new magnetic sensor


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    Mark Alexander A Current Feedback Audio Power Amp

    Abstract: SSM2131 RCA 4136 2N5551 equivalent npn transistor RCA 467 hf wide band class AB power amplifier mosfet transistor 2n5551 transistor equivalent 2n5551 Audio Power Amplifier MOSFET TOSHIBA SSM2131P
    Contextual Info: U ANALOG DEVICES AN-211 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/3294700 The Alexander Current-Feedback Audio Power Amplifier* by Mark Alexander This application note was written by Mark Alexander,


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    AN-211 2SC2682; 2SC2238B. 2SA1142; 2SA968B. Mark Alexander A Current Feedback Audio Power Amp SSM2131 RCA 4136 2N5551 equivalent npn transistor RCA 467 hf wide band class AB power amplifier mosfet transistor 2n5551 transistor equivalent 2n5551 Audio Power Amplifier MOSFET TOSHIBA SSM2131P PDF

    mark 5503 MOSFET

    Abstract: m233 transistor TH-3 TH-4 TH-6 transistor m236
    Contextual Info: / Dimensions mm Lead-1 Lead-1 A Lead-2 Lead-2A Lead-3 Lead-3A Voltage dass, Lot No. 'A \ aO.E 25 min. Lead-4 Cathode mark class, Lot No. 03.0 5.0 ^ \ 00.8 Cathode mark / 25 min. 28 min. Lead-5A Voltage class, Lot No. -1*4- 5.0 03.0 28 min. Lead-6 Voltage dass, Lot No.


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    Lead-10 Lead-11 Lead-12 Lea04A R605A R606A R607A M24-1F/R 15kg-cm M24-2F/R mark 5503 MOSFET m233 transistor TH-3 TH-4 TH-6 transistor m236 PDF

    DN301

    Abstract: 40v input to 5V 3A converter CAPACITOR TANTALUM 3.3k 100V 30BQ060 LT3430 LT3430EFE MMSD914T1 TPSD107M010R0100 ceramic capacitor 100uf x7r esr TP1202
    Contextual Info: advertisement 60V/3A Step-Down DC/DC Converter Maintains High Efficiency over a Wide Input Range – Design Note 301 Mark Marosek Introduction Today’s high voltage applications—such as automotive, industrial and FireWire peripherals—place increasing


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    20mV/DIV DN301 com/go/dnLT3430 1-800-4-LINEAR. dn301f 40v input to 5V 3A converter CAPACITOR TANTALUM 3.3k 100V 30BQ060 LT3430 LT3430EFE MMSD914T1 TPSD107M010R0100 ceramic capacitor 100uf x7r esr TP1202 PDF

    BY252S

    Abstract: BY251S BY253S BY254S BY255S
    Contextual Info: BY251S . BY255S Silicon Rectifiers Nominal forward current 3A Repetitive peak reverse voltage200. 1300 V The rectifiers in plastic case 17-02 are designated by suffix S. These rectifiers are delivered taped. rn I Cathode LJ,J Mark Dim. Min. Milli meters


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    BY251S. BY255S BY251S BY252S BY253S BY254S BS255S BY255S PDF

    SBS c11 battery

    Abstract: moltech NI2020 moltech NI2020 smart battery system LTC1760 li-ion battery charger schematic FDS6912A IN4148 LTC1694
    Contextual Info: LINEAR TECHNOLOGY MARCH 2005 COVER ARTICLE Smart Batteries: Not Just for Notebooks Anymore . 1 Mark Gurries Issue Highlights . 2 LTC in the News… . 2 DESIGN FEATURES Dual Monolithic Ideal Diodes


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    170MHz OT-23 LTC4412. SBS c11 battery moltech NI2020 moltech NI2020 smart battery system LTC1760 li-ion battery charger schematic FDS6912A IN4148 LTC1694 PDF

    marking 3a SOT89

    Abstract: marking 3A sot-89 KIA431F transistor marking 3a
    Contextual Info: SEMICONDUCTOR KIA431F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 3A KIA431F * Grade - - Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only


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    KIA431F OT-89 IA431F marking 3a SOT89 marking 3A sot-89 KIA431F transistor marking 3a PDF

    Contextual Info: FILTERS TECHNOLOGY OF TOMORROW THREE TERMINAL STRUCTURE 1 2 3 3a 3b 3c 4 5 6 Insulator Inner electrode Ag Outer terminations Ag - Pd electrode Ni Plating Solder plating GND terminations Glass coating Polarity mark f CAPACITOR / INDUCTOR KC W NE Bottom KC


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    D-25578 PDF

    spartan camera link

    Abstract: oddr2 HD-SDI deserializer 16 bit parallel XAPP514 hd-SDI deserializer LVDS HD-SDI serializer 16 bit parallel spartan3 fpga development boards 3G-SDI design book xilinx video broadcast
    Contextual Info: White Paper: Spartan-3E & Spartan-3A FPGAs R WP324 v1.0 November 28, 2007 New High Speed Broadcast Video Connectivity Solution (3G) with Low-cost FPGAs By: Bob Feng (Xilinx) and Mark Sauerwald (National Semiconductor) Using Xilinx Spartan -3E and Spartan-3A FPGAs, a


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    WP324 spartan camera link oddr2 HD-SDI deserializer 16 bit parallel XAPP514 hd-SDI deserializer LVDS HD-SDI serializer 16 bit parallel spartan3 fpga development boards 3G-SDI design book xilinx video broadcast PDF

    Contextual Info: 1 0 - X LASER MARK FOR P I N A l ID E N T IF IC A T IO N IN T H IS AREA M r I i ü [± Y L_ 10 9X ^ I K 0. 0. 1 5 Z 10 9 8 0. 8 M 4 4 3 2 /T\ /T\ /T\ v v A\ H . v v •M E T A L IZ E D MARK FOR P IN A l ID E N T IF IC A T IO N I N T H I S AREA


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    98ARH981 98ARH98139A 1239B-04 5M-1994. PDF

    M111

    Contextual Info: MOTOROLA TPUPN11/D SEMICONDUCTOR PROGRAMMING NOTE Period/Pulse-Width Accumulator TPU Function PPWA By Mark Maiolani and Sharon Darley MOTOROLA Order this document by TPUPN11/D SEMICONDUCTOR PROGRAMMING NOTE Period/Pulse-Width Accumulator TPU Function (PPWA)


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    TPUPN11/D 16-bit 24-bit M111 PDF

    BC856

    Contextual Info: SEMICONDUCTOR BC856 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 3A 1 2 Item Marking Description Device Mark 3 BC856 hFE Grade A A, B * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


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    BC856 OT-23 BC856 PDF

    RB053L-30

    Contextual Info: Schottky barrier diode Silicon Epitaxial Planer RB063L-30 Limits Reverse voltage (repetitive peak) VRM 30V Reverse voltage (DC) VR IO* 30V IFSM 70A Average rectified forward current Forward current surge peak (60Hz: ) DIMENSION (UNIT:mm) CATHODE MARK 1.5±0.2


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    RB063L-30 100mA RB053L-30 PDF

    MCP4018

    Abstract: DS01316 MCP4017 MCP4561 MCP40 AN1316 MCP6001 MCP4542 mcp4x mcp42
    Contextual Info: AN1316 Using Digital Potentiometers for Programmable Amplifier Gain Author: Mark Palmer Microchip Technology Inc. INTRODUCTION Usually a sensor requires its output signal to be amplified before being converted to a digital representation. Many times an operational amplifier op


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    AN1316 mechanic18 DS01316A-page MCP4018 DS01316 MCP4017 MCP4561 MCP40 AN1316 MCP6001 MCP4542 mcp4x mcp42 PDF

    PT4600

    Abstract: PT480 PT460 PT4600F PT4610 PT4610F PT4650F CM2140 PF-465
    Contextual Info: PT4600/PT4600F/PT4610/PT4610F/PT4650F Double Ended Mold Type Phototransistors PT4600/PT4600F/PT4610/ PF4610F/PF4650F • Features ■ Outline Dimensions 1. Compact double ended mold package Packaging area : 37% smaller than PT480 (Unit : mm) 2.7 MAX. * 2 Mark


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    PT4600/PT4600F/PT4610/PT4610F/PT4650F PT4600/PT4600F/PT4610/ PF4610F/PF4650F PT480) PT4600 PT4600F PT4650F PT460 PT4610F) PT4610) PT4600 PT480 PT4600F PT4610 PT4610F PT4650F CM2140 PF-465 PDF

    BC856W

    Abstract: 013A 13A1
    Contextual Info: SEMICONDUCTOR BC856W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 3A 1 2 Item Marking Description Device Mark 3 BC856W hFE Grade A A A , B(B) * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method


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    BC856W BC856W 013A 13A1 PDF

    Contextual Info: HWBBM’*-!'* Rectifier Diode $ $£! WSmftWX Surface Mounting Device Single Diode tfWfN-aH OUTLINE DIMENSIONS Unit : mm D3F60 A V -K ? -? 600V 3A I 43fi •Bstticfflnsflistt Cathode mark 7.0*03 L L _ CO _/_ Type No. O iS I fsm o ir s i n 2.5 P y H B - t( W


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    D3F60 D3F60 50HzJPower PDF

    12V dc to 60V dc circuit diagram

    Abstract: 24v to 5V 2A SW regulator dc to dc step up 12v to 42v circuit 2A847 boost 5v to 48v dc to dc step up 12v to 42v 30BQ060 LT1766 LT1956 LT3430
    Contextual Info: DESIGN FEATURES 60V/3A Step-Down DC/DC Converter Maintains High Efficiency over a Wide by Mark W. Marosek Range of Input Voltages Introduction sients as high as 60V . It is designed to maintain excellent efficiencies at both high and low input-to-output voltage differentials over a wide input


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    LT3430 LT1766 200kHz) LT1956 500kHz) 200kHz 16-pin LT1766 LT1956 12V dc to 60V dc circuit diagram 24v to 5V 2A SW regulator dc to dc step up 12v to 42v circuit 2A847 boost 5v to 48v dc to dc step up 12v to 42v 30BQ060 PDF

    MMBTH24

    Abstract: MPSH11 MPSH24 V30I
    Contextual Info: MPSH24 MMBTH24 C E C TO-92 BE B SOT-23 Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications


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    MPSH24 MMBTH24 OT-23 MPSH11 MPSH24 MMBTH24 V30I PDF

    MPSH24

    Abstract: MMBTH24 MPSH11
    Contextual Info: N MPSH24 MMBTH24 C E C TO-92 BE B SOT-23 Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications


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    MPSH24 MMBTH24 OT-23 MPSH11 MPSH24 MMBTH24 PDF

    qml-38535

    Abstract: 54F125 CDFP2-F14 CQCC1-N20 GDFP1-F14 MARKING M2X
    Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED 99-10-22 Raymond Monnin Revised to use alternate die/fabrication requirements and “Q D ” certification mark. New boilerplate. -Ijs_ The original first page of this drawing has been replaced.


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    N2-9078101 54F125BDX 54F125B2X qml-38535 54F125 CDFP2-F14 CQCC1-N20 GDFP1-F14 MARKING M2X PDF

    M111

    Contextual Info: MOTOROLA Order this document by TPUPN11/D SEMICONDUCTOR PROGRAMMING NOTE Period/Pulse-Width Accumulator TPU Function PPWA by Mark Maiolani and Sharon Darley 1 Function Overview The period/pulse-width accumulator (PPWA) algorithm allows any channel to accumulate the sum in


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    TPUPN11/D 16-bit 24-bit M111 PDF

    Contextual Info: 3 Diamond Grade Conspicuity Markings Series 983 Product Bulletin 983 June 2009 Description 3M™ Diamond Grade™ Conspicuity Markings Series 983 are highly retroreflective microprismatic markings designed to mark the sides and rear of vehicles for enhanced visibility and


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    35-3A-09 1-800-3MHELPS PDF