MARK 11F DIODE Search Results

M1F60

Contextual Info: Rectifier Diode Surface Mounting Device Single Diode •*W fN -äsH OUTLINE DIMENSIONS Package : M1F Unit : mm M 1 F 800V 1A + - — N— 2 .8 101 it V — F t - 9 Cathode mark 45 £1 B64 l!i|P "3 7 ? ° 00 wmm «T 116 2 n y HB-g- W Type No. Date code

4a3 zener diode

Abstract: 2A0 zener diode
Contextual Info: Preliminary Datasheet HZU Series R07DS0423EJ1000 Rev.10.00 Jun 06, 2011 Silicon Planar Zener Diode for Stabilizer Features • These diodes are delivered taped.  Ultra small Resin Package URP is suitable for surface mount design. Ordering Information

Contextual Info: Preliminary Datasheet HVC327C Variable Capacitance Diode for VHF tuner REJ03G0053-0200 Rev.2.00 May 06, 2010 Features •    Low voltage type tuning voltage 1 to 10V , it is suitable for ET without DC/DC converter. High capacitance ratio (n = 11.0 min).

Contextual Info: PP/MP Datasheet RKH0160BKJ Silicon Planar Diode for High Voltage Switching R07DS0333EJ0100 Rev.1.00 Apr 07, 2011 Features • Short reverse recovery time enable fast switching.  Ultra small Flat Lead Package UFP is suitable for surface mount design. Ordering Information

Contextual Info: Preliminary Datasheet HVD327C Variable Capacitance Diode for VHF tuner REJ03G0218-0300 Rev.3.00 May 06, 2010 Features •    Low voltage type tuning voltage 1 to 10V , it is suitable for ET without DC/DC converter. High capacitance ratio (n = 11.0 min).

Contextual Info: Preliminary Datasheet RKR0303AKJ Silicon Schottky Barrier Diode for Rectifying R07DS0249EJ0300 Rev.3.00 Jan 25, 2011 Features • Low forward voltage drop and suitable for high efficiency rectifying.  Ultra small Flat Lead Package UFP is suitable for compact and high-density surface mount design.

Contextual Info: PP/MP Datasheet RKH0145AKG Silicon Epitaxial Planar Diode for High Voltage R07DS0512EJ0100 Rev.1.00 Switching Sep 13, 2011 Features • Short reverse recovery time enable fast switching.  Ultra small Resin Package TURP-FM is suitable for compact and high-density surface mount design.

Contextual Info: PP/MP Datasheet RKH0145AKU Silicon Epitaxial Planar Diode for High Voltage R07DS0513EJ0100 Rev.1.00 Switching Sep 13, 2011 Features • Short reverse recovery time enable fast switching.  Ultra small Resin Package TURP-FM is suitable for compact and high-density surface mount design.

Contextual Info: Preliminary Datasheet RKR104BKV Silicon Schottky Barrier Diode for Rectifying REJ03G1775-0100 Rev.1.00 Jul 13, 2010 Features • Low reverse current and suitable for high efficiency rectifying.  Halogen free, environmental friendly package includes conformity to RoHS directive.

Contextual Info: PP Datasheet RKR0103BYPKQ R07DS0564EJ0100 Rev.1.00 Jan 12, 2012 Silicon Schottky Barrier Diode for Rectifying Features • Low reverse voltage drop and suitable for high efficiency rectifying.  VSON-4 Package is suitable for high density surface mounting.

Contextual Info: PP/MP Datasheet RKR103BKU Silicon Schottky Barrier Diode for Rectifying R07DS0686EJ0100 Rev.1.00 Jun 12, 2012 Features • Low reverse current and suitable for high efficiency rectifying.  Ultra small Resin Package TURP-FM is suitable for compact and high-density surface mount design.

Contextual Info: PP/MP Datasheet RKR104BKU Silicon Schottky Barrier Diode for Rectifying R07DS0687EJ0100 Rev.1.00 Jun 12, 2012 Features • Low reverse current and suitable for high efficiency rectifying.  Ultra small Resin Package TURP-FM is suitable for compact and high-density surface mount design.

Contextual Info: PP/MP Datasheet RKR103AKU Silicon Schottky Barrier Diode for Rectifying R07DS0685EJ0100 Rev.1.00 Jun 12, 2012 Features • Low forward voltage drop and suitable for high efficiency rectifying.  Ultra small Resin Package TURP-FM is suitable for compact and high-density surface mount design.

Contextual Info: Preliminary Datasheet HZM-N Series Silicon Epitaxial Planar Zener Diode for Stabilizer R07DS0358EJ0600 Rev.6.00 May 19, 2011 Features • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application.  MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: Preliminary Datasheet RKD705WKKR R07DS0330EJ0100 Rev.1.00 Apr 06, 2011 Silicon Epitaxial Schottky Barrier Diode for Detector Features • Low forward voltage, Low capacitance.  VSON-3 Package is suitable for high density surface mounting. Ordering Information

Contextual Info: PP Datasheet RKR0103BSKR R07DS0567EJ0100 Rev.1.00 Jan 12, 2012 Silicon Schottky Barrier Diode for Rectifying Features • Low reverse voltage drop and suitable for high efficiency rectifying.  VSON-3 Package is suitable for high density surface mounting.

Contextual Info: Preliminary Data Sheet PS2915-1 R08DS0112EJ0100 Rev.1.00 HIGH CTR, AC INPUT RESPONSE TYPE 4-PIN ULTRA SMALL FLAT-LEAD PHOTOCOUPLER Nov 01, 2013 DESCRIPTION The PS2915-1 is an optically coupled isolator containing GaAs light emitting diodes and an NPN silicon

Contextual Info: Preliminary Data Sheet NV4V41SF Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0064EJ0200 Rev.2.00 Jun 20, 2013 DESCRIPTION The NV4V41SF is a high output blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure achieves a high optical power output of 600 mW CW .

Contextual Info: Preliminary Data Sheet NV4V31SF Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0070EJ0100 Rev.1.00 Jun 07, 2013 DESCRIPTION The NV4V31SF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure achieves a high optical power output of 175 mW CW . The NV4V31SF can provide excellent linearity from low to

Contextual Info: Preliminary Data Sheet NX5521 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0028EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5521 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are

Contextual Info: Preliminary Data Sheet NX5522 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0029EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5522 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are

Contextual Info: Preliminary Data Sheet NV4V41SF Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0064EJ0200 Rev.2.00 Jun 07, 2013 DESCRIPTION The NV4V41SF is a high output blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure achieves a high optical power output of 600 mW CW .

Contextual Info: Preliminary Data Sheet NV4V31SF Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0070EJ0100 Rev.1.00 Jun 20, 2013 DESCRIPTION The NV4V31SF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure achieves a high optical power output of 175 mW CW . The NV4V31SF can provide excellent linearity from low to

Contextual Info: Data Sheet PS2933-1 HIGH COLLECTOR TO EMITTER VOLTAGE R08DS0115EJ0100 Rev.1.00 Nov 29, 2013 4-PIN ULTRA SMALL FLAT-LEAD PHOTOCOUPLER DESCRIPTION The PS2933-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in one package for high density mounting applications.