MARK 11F DIODE Search Results

M1F60

Contextual Info: Rectifier Diode Surface Mounting Device Single Diode •*W fN -äsH OUTLINE DIMENSIONS Package : M1F Unit : mm M 1 F 800V 1A + - — N— 2 .8 101 it V — F t - 9 Cathode mark 45 £1 B64 l!i|P "3 7 ? ° 00 wmm «T 116 2 n y HB-g- W Type No. Date code

Contextual Info: Preliminary Datasheet RKH0125AKF Silicon Epitaxial Planar Diode for High Voltage switching R07DS0412EJ0100 Rev.1.00 May 16, 2011 Features • Low Capacitance. C  3.0 pF  Short reverse recovery time (trr  100 ns)  Ultra small Resin Package (URP-F) is suitable for compact and high-density surface mount design.

renesas Halogen Free

Contextual Info: Preliminary Datasheet RKD706KV Silicon Schottkey Barrier Diode for back flow protect R07DS0411EJ0100 Rev.1.00 May 16, 2011 Features • Low reverse current and suitable for high efficiency rectifying.  Halogen free, environmental friendly package includes conformity to RoHS directive.

RKZ18T

Abstract: Diode Mark N7 RKZ18TKG MARK 11f diode PTSP0002ZA-A
Contextual Info: Preliminary Datasheet RKZ18TKG Silicon Planar Zener Diode for Bi-directional Surge Absorption R07DS0153EJ0100 Rev.1.00 Sep 21, 2010 Features •     This product is for a Bi-directional zener diode so its possible to use for Bi-directional surge absorption.

RKZ16TKG

Abstract: PTSP0002ZA-A
Contextual Info: Preliminary Datasheet RKZ16TKG Silicon Planar Zener Diode for Bi-directional Surge Absorption R07DS0152EJ0100 Rev.1.00 Sep 21, 2010 Features •     This product is for a Bi-directional zener diode so its possible to use for Bi-directional surge absorption.

HVC327C

Contextual Info: Preliminary Datasheet HVC327C Variable Capacitance Diode for VHF tuner REJ03G0053-0200 Rev.2.00 May 06, 2010 Features •    Low voltage type tuning voltage 1 to 10V , it is suitable for ET without DC/DC converter. High capacitance ratio (n = 11.0 min).

Contextual Info: PP/MP Datasheet RKZ9.0TKP R07DS0263EJ0100 Rev.1.00 Apr 06, 2011 Silicon Planar Zener Diode for Bi-directional Surge Absorption Features •    This product is for a Bi-directional zener diode so its possible to use for Bi-directional surge absorption.

4a3 zener diode

Abstract: 2A0 zener diode
Contextual Info: Preliminary Datasheet HZU Series R07DS0423EJ1000 Rev.10.00 Jun 06, 2011 Silicon Planar Zener Diode for Stabilizer Features • These diodes are delivered taped.  Ultra small Resin Package URP is suitable for surface mount design. Ordering Information

Contextual Info: Preliminary Datasheet HVC327C Variable Capacitance Diode for VHF tuner REJ03G0053-0200 Rev.2.00 May 06, 2010 Features •    Low voltage type tuning voltage 1 to 10V , it is suitable for ET without DC/DC converter. High capacitance ratio (n = 11.0 min).

Contextual Info: PP/MP Datasheet RKH0160BKJ Silicon Planar Diode for High Voltage Switching R07DS0333EJ0100 Rev.1.00 Apr 07, 2011 Features • Short reverse recovery time enable fast switching.  Ultra small Flat Lead Package UFP is suitable for surface mount design. Ordering Information

HVD327C

Abstract: PUSF0002ZB-A
Contextual Info: Preliminary Datasheet HVD327C Variable Capacitance Diode for VHF tuner REJ03G0218-0300 Rev.3.00 May 06, 2010 Features •    Low voltage type tuning voltage 1 to 10V , it is suitable for ET without DC/DC converter. High capacitance ratio (n = 11.0 min).

7B2 zener diode

Contextual Info: Preliminary Datasheet HZU Series R07DS0423EJ1000 Rev.10.00 Jun 06, 2011 Silicon Planar Zener Diode for Stabilizer Features • These diodes are delivered taped.  Ultra small Resin Package URP is suitable for surface mount design. Ordering Information

Contextual Info: Preliminary Datasheet HVD327C Variable Capacitance Diode for VHF tuner REJ03G0218-0300 Rev.3.00 May 06, 2010 Features •    Low voltage type tuning voltage 1 to 10V , it is suitable for ET without DC/DC converter. High capacitance ratio (n = 11.0 min).

Contextual Info: PP/MP Datasheet RKH0160BKJ Silicon Planar Diode for High Voltage Switching R07DS0333EJ0100 Rev.1.00 Apr 07, 2011 Features • Short reverse recovery time enable fast switching.  Ultra small Flat Lead Package UFP is suitable for surface mount design. Ordering Information

Contextual Info: PP/MP Datasheet RKH0145AKG Silicon Epitaxial Planar Diode for High Voltage R07DS0512EJ0100 Rev.1.00 Switching Sep 13, 2011 Features • Short reverse recovery time enable fast switching.  Ultra small Resin Package TURP-FM is suitable for compact and high-density surface mount design.

Contextual Info: PP/MP Datasheet RKH0145AKU Silicon Epitaxial Planar Diode for High Voltage R07DS0513EJ0100 Rev.1.00 Switching Sep 13, 2011 Features • Short reverse recovery time enable fast switching.  Ultra small Resin Package TURP-FM is suitable for compact and high-density surface mount design.

MARK 11f diode

Contextual Info: PP/MP Datasheet RKH0145AKU Silicon Epitaxial Planar Diode for High Voltage R07DS0513EJ0100 Rev.1.00 Switching Sep 13, 2011 Features • Short reverse recovery time enable fast switching.  Ultra small Resin Package TURP-FM is suitable for compact and high-density surface mount design.

Contextual Info: PP/MP Datasheet RKH0145AKG Silicon Epitaxial Planar Diode for High Voltage R07DS0512EJ0100 Rev.1.00 Switching Sep 13, 2011 Features • Short reverse recovery time enable fast switching.  Ultra small Resin Package TURP-FM is suitable for compact and high-density surface mount design.

MARK 11f diode

Contextual Info: PP/MP Datasheet RKR103AKU Silicon Schottky Barrier Diode for Rectifying R07DS0685EJ0100 Rev.1.00 Jun 12, 2012 Features • Low forward voltage drop and suitable for high efficiency rectifying.  Ultra small Resin Package TURP-FM is suitable for compact and high-density surface mount design.

Contextual Info: PP/MP Datasheet RKR103BKU Silicon Schottky Barrier Diode for Rectifying R07DS0686EJ0100 Rev.1.00 Jun 12, 2012 Features • Low reverse current and suitable for high efficiency rectifying.  Ultra small Resin Package TURP-FM is suitable for compact and high-density surface mount design.

Contextual Info: Preliminary Datasheet RKR104BKV Silicon Schottky Barrier Diode for Rectifying REJ03G1775-0100 Rev.1.00 Jul 13, 2010 Features • Low reverse current and suitable for high efficiency rectifying.  Halogen free, environmental friendly package includes conformity to RoHS directive.

MARK 11f diode

Contextual Info: PP Datasheet RKR0103AYPKQ R07DS0563EJ0100 Rev.1.00 Jan 12, 2012 Silicon Schottky Barrier Diode for Rectifying Features • Low forward voltage drop and suitable for high efficiency rectifying.  VSON-4 Package is suitable for high density surface mounting.

Contextual Info: Preliminary Datasheet RKR104BKV Silicon Schottky Barrier Diode for Rectifying REJ03G1775-0100 Rev.1.00 Jul 13, 2010 Features • Low reverse current and suitable for high efficiency rectifying.  Halogen free, environmental friendly package includes conformity to RoHS directive.

RKR0303AKJ

Contextual Info: Preliminary Datasheet RKR0303AKJ Silicon Schottky Barrier Diode for Rectifying R07DS0249EJ0300 Rev.3.00 Jan 25, 2011 Features • Low forward voltage drop and suitable for high efficiency rectifying.  Ultra small Flat Lead Package UFP is suitable for compact and high-density surface mount design.