MARCH1998 Search Results

philips 433mhz receiver

Abstract: 433.92mhz rf receiver 433mhz resonator 434 mhz oscillator Receiver with SAW-based Oscillator KESRX01 433mhz ask 4 channel remote ASK receiver 433mhz colpitts oscillator RF amplifer
Contextual Info: KESRX01 290 - 460MHz ASK Receiver Advance Information DS3968 5.0 March1998 FEATURES • Very low supply current 2.30mA typical ■ Low external part count ■ –105dBm sensitivity (typical 315MHz) ■ Integrated VCO and IF Filters. IF1 VCC 4 2 3 MIXIP 5

2N7411

Abstract: SL9110 MIL-PRF19500
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 June 1998. INCH-POUND \ MIL-PRF-19500/639A 24 March1998 SUPERSEDING MIL-PRF-19500/639 09 November 1996 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED

HF Colpitts VCO

Abstract: 434M 418 MHz SAW AM RF Transmitter 1,488 mhz crystal oscillator
Contextual Info: M IT E L KESRX01 290 - 460MHz ASK Receiver SEMICONDUCTOR Advance Information DS3968 5.0 March1998 The KESRX01 is a single chip ASK Amplitude Shift Key Receiver IC. It is designed to operate in a variety of low power radio applications including keyless entry, general domestic

philips 433mhz receiver

Abstract: 433mhz chip antenna
Contextual Info: KESRX01 290 - 460MHz ASK Receiver Advance Information DS3968 5.0 March1998 FEATURES • Very low supply current 2.30mA typical ■ Low external part count ■ –105dBm sensitivity (typical 315MHz) ■ Integrated VCO and IF Filters. IF1 VCC 4 2 3 MIXIP 5

Contextual Info: CD h JANSR2N7410 a r r is Formerly FSL110R4 March1998 3.5A, 1 0 0 V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 3.5A, 100V, rDS ON = 0.600U The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

AN207

Abstract: KESRX01 resistor var 5k DS3968
Contextual Info: KESRX01 290 - 460MHz ASK Receiver Advance Information DS3968 5.0 March1998 FEATURES • Very low supply current 2.30mA typical ■ Low external part count ■ –105dBm sensitivity (typical 315MHz) ■ Integrated VCO and IF Filters. IF1 VCC 4 2 3 MIXIP 5

df2 diode

Abstract: KESTX01 AN207 KESRX01 434 mhz xtal oscillator block diagram for RF transmitter AND RECEIVER op QPA24 philips radio 433MHz
Contextual Info: KESRX01 290 - 460MHz ASK Receiver Advance Information DS3968 5.0 March1998 FEATURES • Very low supply current 2.30mA typical ■ Low external part count ■ –105dBm sensitivity (typical 315MHz) ■ Integrated VCO and IF Filters. IF1 VCC 4 2 3 MIXIP 5

df2 diode

Abstract: 434 mhz xtal oscillator power amplifer circuit diagram 433MHZ ask transmitter amplifer ASK receiver superheterodyne single 433-92mhz rf model 43402mhz
Contextual Info: KESRX01 290 - 460MHz ASK Receiver Advance Information DS3968 5.0 March1998 FEATURES • Very low supply current 2.30mA typical ■ Low external part count ■ –105dBm sensitivity (typical 315MHz) ■ Integrated VCO and IF Filters. IF1 VCC 4 2 3 MIXIP 5

Contextual Info: 'f ^BSS JANSR2N7410 Form erly FSL110R4 March1998 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 3.5A, 100V, r[js ON = 0.600£2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s

df2 diode

Abstract: AN207 KESRX01
Contextual Info: KESRX01 290 - 460MHz ASK Receiver Advance Information DS3968 5.0 March1998 FEATURES • Very low supply current 2.30mA typical ■ Low external part count ■ –105dBm sensitivity (typical 315MHz) ■ Integrated VCO and IF Filters. IF1 VCC 4 2 3 MIXIP 5

transistor C458

Abstract: MC74HCT164 tp394 motorola TP230 74hc164 C458 datasheet diode c341 RCVN18 RJ45 jack 1X4 IC 24c08 data sheet
Contextual Info: Preliminary ThunderSWITCH 24/3 Schematic Description and Schematics REFERENCE GUIDE: SPWA019 Networking Business Unit Revision 0.61 March1998 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or

SO10 package

Contextual Info: VN16BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY Figure 1. Package Table 1. General Features Type VDSS RDS on IOUT VCC VN16BPS 40 V 0.06 : 5.6 A 26 V • MAXIMUM CONTINUOUS OUTPUT CURRENT: 20 A @ Tc= 85°C ■ 5V LOGIC LEVEL COMPATIBLE INPUT ■ THERMAL SHUT-DOWN

Contextual Info: TL16C550C, TL16C550CI ASYNCHRONOUS COMMUNICATIONS ELEMENT WITH AUTOFLOW CONTROL _ • • • • • • • • • • Programmable Auto-RTS and Auto-CTS In Auto-CTS Mode, CTS Controls Transmitter In Auto-RTS Mode, RCV FIFO Contents and

PDC16UV7284

Abstract: 106E capacitor
Contextual Info: March 1998 Revision 2.0 data sheet PDC16UV7284B- 103/10 T-S 128MByte (16M x 72) CMOS, PC/100 Synchronous DRAM Module General Description The PDC16UV7284B-(103/10)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 16M words by 72 bits, in a 168-pin, dual-in-line memory module (DIMM) package.

D2NB60

Abstract: d2nb6 STD2NB60 STD2NB60T4 V1522 STD2NB60-1 d2nb 0037C
Contextual Info: STD2NB60 STD2NB60-1 N-CHANNEL 600V - 3.3 Ω - 2.6A DPAK/IPAK PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STD2NB60 600 V < 3.6 Ω 2.6 A STD2NB60-1 600 V < 3.6 Ω 2.6 A FEATURES SUMMARY • TYPICAL RDS(on) = 3.3 Ω

D2NB60

Abstract: d2nb6 STD2NB60T4
Contextual Info: STD2NB60 STD2NB60-1 N-CHANNEL 600V - 3.3 Ω - 2.6A DPAK/IPAK PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STD2NB60 600 V < 3.6 Ω 2.6 A STD2NB60-1 600 V < 3.6 Ω 2.6 A FEATURES SUMMARY • TYPICAL RDS(on) = 3.3 Ω

SO10 package

Abstract: VN16BPS VN16BSP VN16BSP13TR
Contextual Info: VN16BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY Table 1. General Features Figure 1. Package Type VDSS RDS on IOUT VCC VN16BPS 40 V 0.06 Ω 5.6 A 26 V • MAXIMUM CONTINUOUS OUTPUT CURRENT: 20 A @ Tc= 85°C ■ 5V LOGIC LEVEL COMPATIBLE INPUT ■ THERMAL SHUT-DOWN

Contextual Info: VN16BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY Table 1. General Features Figure 1. Package Type VDSS RDS on IOUT VCC VN16BPS 40 V 0.06  5.6 A 26 V • MAXIMUM CONTINUOUS OUTPUT CURRENT: 20 A @ Tc= 85°C ■ 5V LOGIC LEVEL COMPATIBLE INPUT ■ THERMAL SHUT-DOWN

B11NB40

Abstract: B11NB4 D2Pak Package dimensions 107A b11nb STB11NB40 STB11NB40-1 STB11NB40T4
Contextual Info: STB11NB40 STB11NB40-1 N-CHANNEL 400V - 0.48 Ω - 10.7A D2PAK/I2PAK PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STB11NB40 400 V < 0.55 Ω 10.7 A STB11NB40-1 400 V < 0.55 Ω 10.7 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.48 Ω

Contextual Info: March 1998 Revision 1.0 data sheet PDC2UV6484B- 75/102/103 T-S 16MByte (2M x 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC2UV6484B-(75/102/103)T-S is a high performance, 16-megabyte synchronous, dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.

P3NB60

Abstract: P3NB60FP V1522 p3nb60fp datasheet STP3NB60 STP3NB60FP Part Marking TO-220 STMicroelectronics
Contextual Info: STP3NB60 STP3NB60FP N-CHANNEL 600V - 3.3 Ω - 3.3A TO-220/TO-220FP PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP3NB60 600 V < 3.6 Ω 3.3 A STP3NB60FP 600 V < 3.6 Ω 2.2 A FEATURES SUMMARY • TYPICAL RDS(on) = 3.3 Ω

Contextual Info: March 1998 Revision 1.0 data sheet PDC2UV6484A- 75/102/103 T-S 16MByte (2M x 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC2UV6484A-(75/102/103)T-S is a high performance, 16-megabyte synchronous, dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.

Contextual Info: March 1998 Revision 1.0 data sheet PDC2UV7284B- 75/102/103 T-S 16MByte (2M x 72) CMOS, PC/100 Synchronous DRAM Module - ECC General Description The PDC2UV7284B-(75/102/103)T-S is a high performance, 16-megabyte synchronous, dynamic RAM module organized as 2M

b11nb40

Abstract: B11NB4 D2Pak Package dimensions b11nb STB11NB40T4 STMicroelectronics marking D2PAK obsolete STB11NB40 STB11NB40-1 DSASW003744
Contextual Info: STB11NB40 STB11NB40-1 N-CHANNEL 400V - 0.48 Ω - 10.7A D2PAK/I2PAK PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STB11NB40 400 V < 0.55 Ω 10.7 A STB11NB40-1 400 V < 0.55 Ω 10.7 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.48 Ω