MAR30 Search Results

C0MB01

Contextual Info: S ch e m atic : I n .j E lectrical S p e c i f i c a t i o n s : @ 25 *0 HI POT: 1500 Vrms INPUT/OUTPUT HIPOT: 500 Vrms (P5+6+7 to P1 + 2 + 3 + 4 ) Turns Ratio: 1CT : 1CT ±3% (RCV) Turns Ratio: 1CT : 1CT ±3% (XMT) CABLE SIDE DCL: 350uH Minimum @100KHz 100mV

ELM34413AA

Contextual Info: 单 P 沟道 MOSFET ELM34413AA-N •概要 ■特点 ELM34413AA-N 是 P 沟道低输入电容，低工作电 •Vds=-30V 压，低导通电阻的大电流 MOSFET。 ·Id=-12A ·Rds on < 12mΩ (Vgs=-10V) ·Rds(on) < 19mΩ (Vgs=-4.5V) ■绝对最大额定值

Contextual Info: REVISIONS REV ECN, ERN NO. DATE APPRD. C PRODUCT DRAWING EAR 12957 O C T04/06 K.L. MECHANICAL DATA: ALL MATERIALS ARE RoHS COMPLIANT .305 [7 .7 5 ] BETWEEN DIMPLES SHELL: STEEL, TIN PLATED INSERTS: HIGH TEMPERATURE RESISTANT NYLON, GLASS REINFORCED, UL FLAMMABILITY RATING

high voltage regulator schematic

Abstract: buck 10a 4.2V FDC637AN MBR0530 SP6123A SP6123ACN
Contextual Info: Design Solution # 19 SP6123A Buck Regulator 1V/1.5A Out Date: March 30, 2006 Designed by: Brian Kennedy Part Number: SP6123ACN Application Description: Small layout size 16X16mm from 3Vin to 6Vin Electrical Requirements: Input Voltage 3.0V – 6.0V Output Voltage

Contextual Info: シングル P チャンネル MOSFET ELM34413AA-N •概要 ■特長 ELM34413AA-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-12A ・ Rds on < 12mΩ (Vgs=-10V) ・ Rds(on) < 19mΩ (Vgs=-4.5V)

Contextual Info: A C D E 5 [3.17] LED TAILS .100 [2.54] CONTACT TAILS TIN DIPPED ZONE REVISIONS SYlVl ZONE c D F ECN, ERN NO. DATE APPRD. PROPOSAL SEPARATE THE LED DRAWING M A R JO / 72 L. CHAN L. CHAN J U N 0 6 /1 2 .100 [2.54] .150 [3.81] .210 [5.53] hRf .665 [16.89] MIN.

Contextual Info: Single P-channel MOSFET ELM34413AA-N •General description ■Features ELM34413AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 12mΩ (Vgs=-10V) Rds(on) < 19mΩ (Vgs=-4.5V)

Contextual Info: M ec ha nic a l Dimensions: XFMRS XF970A1 COM B 0 1“ 4 YYWW _ 10 0 .6 5 0 Max Max □ o XI XI Q □ T 0. 0. 0 .4 3 0 -—- ' ' ,-□ 00 □ CD □ • ñ !“ □ cx □ LO KO □ □ n 1 V J " ' i —i—1 BOTTOM VIEW Mou nti Pattern: - 0 .0 5 0

p1203evg

Contextual Info: Single P-channel MOSFET ELM34413AA-N •General description ■Features ELM34413AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 12mΩ (Vgs=-10V) Rds(on) < 19mΩ (Vgs=-4.5V)

Contextual Info: BAT 14-077S Silicon Single Flip Chip Schottky Diode Preliminary data
Single Schottky medium Barrier Mixer Diode
For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking BAT 14-077S -