MAR-7 MMIC Search Results

MAR-7

Contextual Info: NON-CATALOG Drop-In Monolithic Amplifier 50Ω MAR-7+ DC to 2000 MHz Features • wideband, DC to 2000 MHz • high gain, up to 32.5 dB @ 100 MHz • low noise • MAR-7+ is equivalent to MSA-0785 • cascadable • protected by US Patent, 6,943,629 except MAR-6+

MAR-7 MMIC

Abstract: MAR7 MAR-7 mmic mar-6 MAR-6 MMIC 10W-T MSA-0785 VV105 WW107 Resistor mttf
Contextual Info: NON-CATALOG Drop-In Monolithic Amplifier 50Ω MAR-7+ DC to 2000 MHz Features • wideband, DC to 2000 MHz • high gain, up to 32.5 dB @ 100 MHz • low noise • MAR-7+ is equivalent to MSA-0785 • cascadable • protected by US Patent, 6,943,629 except MAR-6+

MAR-7 MMIC

Abstract: MAR-7 MAR7 WW107 MAR-6 MMIC mmic mar-6 MSA-0785 VV105 mmic mar 3 power7
Contextual Info: NON-CATALOG Drop-In Monolithic Amplifier 50Ω MAR-7+ DC to 2000 MHz Features • wideband, DC to 2000 MHz • high gain, up to 32.5 dB @ 100 MHz • low noise • MAR-7+ is equivalent to MSA-0785 • cascadable • protected by US Patent, 6,943,629 except MAR-6+

MAR-7 MMIC

Contextual Info: Mini-Circuits - Specification for Amplifier - MAR-7 Amplifier print this page MAR-7 Frequency GAIN, dB MHz fL - fU Min. Maximum Power, dBm Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc Output Input NF IP3 CurIn Out I P Device

MAR-7 MMIC

Contextual Info: MMIC Amplifier MAR-7+ Typical Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions or to view GRAPHS. Definitions: Input Return Loss = -S11 dB Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB)

mar-7

Abstract: MAR-7 MMIC MAR7
Contextual Info: MMIC Amplifier MAR-7+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -20dBm, CURRENT = 22mA INPUT POWER = -20dBm, Temperature = +25°C 20 20 19 -45°C 19 16mA 18 +25°C 18 22mA 17 +85°C 17 28mA 16 dB (dB) 16 15 15 14 14 13

CMM0511-QT

Abstract: CMM0511-QT-0G00 CMM0511-QT-0G0T PB-CMM0511-QT-0000 13-Mar-10
Contextual Info: 5.0-14.0 GHz GaAs MMIC Packaged Driver Amplifier CMM0511-QT March 2010 - Rev 13-Mar-10 Features 20 dB Gain 11 dBm P1dB 3x3 QFN Package Single Power Supply 5-7 V, 90 mA Self Bias On-Chip ESD Protection Circuit Description Mimix Broadband’s 3 stage 5.0 to 14.0 GHz driver

CMM1118-QT

Abstract: CMM1118-QT-0G00 CMM1118-QT-0G0T PB-CMM1118-0000
Contextual Info: 11.0-20.0 GHz GaAs MMIC Packaged Driver Amplifier March 2008 - Rev 06-Mar-08 CMM1118-QT Features 20 dB Gain 14 dBm P1dB 3x3 QFN Package Single Power Supply 5-7 V, 90 mA Self Bias On-Chip ESD Protection Circuit Description Mimix Broadband’s 3 stage 11.0 to 20.0 GHz driver

CMM1118-QT

Abstract: CMM1118-QT-0G00 CMM1118-QT-0G0T PB-CMM1118-0000 celeritek ghz
Contextual Info: 11.0-20.0 GHz GaAs MMIC Packaged Driver Amplifier March 2006 - Rev 08-Mar-06 CMM1118-QT Features 20 dB Gain 14 dBm P1dB 3x3 QFN Package Single Power Supply 5-7 V, 90 mA Self Bias On-Chip ESD Protection Circuit Description Mimix Broadband’s 3 stage 11.0 to 20.0 GHz driver

CMM1118-QT

Abstract: CMM1118-QT-0G00 CMM1118-QT-0G0T CMM118-QT PB-CMM1118-0000
Contextual Info: 11.0-20.0 GHz GaAs MMIC Packaged Driver Amplifier CMM1118-QT March 2010 - Rev 13-Mar-10 Features 20 dB Gain 14 dBm P1dB 3x3 QFN Package Single Power Supply 5-7 V, 110 mA Self Bias On-Chip ESD Protection Circuit Description Mimix Broadband’s 3 stage 11.0 to 20.0 GHz driver

MAR-4SM

Abstract: MAR-4SM MMIC MAR4SM
Contextual Info: MMIC Amplifier MAR-4SM+ Typical Performance Curves Gain ISOLATION 10 10 11 Gain @ 50 mA 8 12 7 13 Isolation dB Gain (dB) 9 6 5 4 14 15 16 3 17 2 18 1 19 Isolation @ 50 mA 20 500 1000 1500 2000 2500 3000 3500 4000 500 1000 1500 Frequency (MHz) Return Loss In

MAR-4

Abstract: mmic mar-4 return loss "Isolation Amplifier" mhz
Contextual Info: MMIC Amplifier MAR-4+ Typical Performance Curves Gain ISOLATION 10 10 11 Gain @ 50 mA 8 12 7 13 Isolation dB Gain (dB) 9 6 5 4 14 15 16 3 17 2 18 1 19 Isolation @ 50 mA 20 500 1000 1500 2000 2500 3000 3500 4000 500 1000 1500 Frequency (MHz) Return Loss In

XU1019-QH

Abstract: XB1014-QT
Contextual Info: 37.0-40.0 GHz Up-Converter QFN, 4x4mm U1019-QH March 2010 - Rev 25-Mar-10 Features Integrates Image Reject Balanced Mixer, LO Buffer, LO Doubler and RF Buffer 7 dB Conversion Gain (USB) -25 dBm (2x) LO Leakage (at RF Port) 26 dBm Output Third Order Intercept Point (OIP3)

Contextual Info: 37.0-40.0 GHz Up-Converter QFN, 4x4mm U1019-QH March 2010 - Rev 25-Mar-10 Features Integrates Image Reject Balanced Mixer, LO Buffer, LO Doubler and RF Buffer 7 dB Conversion Gain (USB) -25 dBm (2x) LO Leakage (at RF Port) 26 dBm Output Third Order Intercept Point (OIP3)

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2711 MMIC wideband amplifier Preliminary specification 2001 Mar 29 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGA2711 PINNING FEATURES • Internally matched PIN DESCRIPTION

89122

Abstract: BGA2748 Philips 9510
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2748 MMIC wideband amplifier Preliminary specification 2001 Mar 29 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGA2748 PINNING FEATURES • Internally matched PIN DESCRIPTION

Marking G4 SOT363

Abstract: marking code G4
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2771 MMIC wideband amplifier Preliminary specification 2001 Mar 30 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGA2771 PINNING FEATURES • Internally matched PIN DESCRIPTION

Contextual Info: EMM5840X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 25 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2776 MMIC wideband amplifier Preliminary specification 2001 Mar 30 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGA2776 PINNING FEATURES • Internally matched PIN DESCRIPTION

Contextual Info: PreliminaryData Sheet PC3244TB Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.

PC3239TB

Contextual Info: A Business Partner of Renesas Electronics Corporation. Preliminary PC3244TB Data Sheet Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.

Contextual Info: PreliminaryData Sheet PC3244TB Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.

PC3244TB

Abstract: germanium transistor ac 128 PC3239TB
Contextual Info: A Business Partner of Renesas Electronics Corporation. Preliminary PC3244TB Data Sheet Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.

Contextual Info: 34.5-38.0 GHz GaAs MMIC Power Amplifier P1056-BD Mar 2009 - Rev 04-Mar-09 Features Chip Device Layout High Efficiency Power Amplifier >35% PAE 13 dB Small Signal Gain +25.0 dBm P1dB Compression Point +26.0 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing