MAR-6 SM Search Results

MAR-4SM

Contextual Info: up to 56 mW + 17.5 dBm output dc to 2 GHz case style selection outline drawings Table of Contents RAM MOCfl.NO. k □ MAR case VV105 MAR-1 MAR-2 MAR-3 MAR-4 MAR-6 MAR-7 MAR-8 OO MAR-SM MAR-1SM case WW107 MAR-2SM MAR-3SM MAR-4SM MAR-6SM MAR-7SM MAR-8SM oRAM

W105

Abstract: ZFL-1000LN amplifier minicircuits 72 vna sot 23 MAV-3 ZHL-2-50P3 MAV-4
Contextual Info: GROUP Amplifier Selection Guide K GAIN dB MIN. MAX'" POWER (dBm) N.F. (dB) 1YP. MAR-1 MAR-2 MAR-3# MAR-4 D C-1000 DC-2000 DC-2000 DC-1000 13.0 8.5 8.0 7.0 + 1.5 +4.5 +10.0 + 12.5 5.5 6.5 6.0 6.5 MAR-6# MAR-7# MAR-8 MAV-1 DC-2000 DC-2000 DC-1000 DC-1000 9.0

soundgenerator

Abstract: PS7K
Contextual Info: FUJITSU SEMICONDUCTOR MB91F361 General Specification MB91F361 – Specification MB91F361 Specification Version 2.5 23-Mar-99  1999 Fujitsu Limited Revision History Revision 1.0 Date 16-Mar-98 1.1 1-Apr-98 1.2 2.0 2.1 2.2 2.3 14-May-98 6-Aug-98 19-Oct-98

HYS72D256320HBR-5-C

Contextual Info: Data Sheet, Rev. 1.20, Mar. 2006 HYS72D64301HBR–[5/6]–C HYS72D128x00HBR–[5/6]–C HYS72D128321HBR–[5/6]–C HYS72D256x20HBR–[5/6]–C 184-Pin Registered Double-Data-Rate SDRAM Module RDIMM DDR SDRAM RoHS Compliant Memory Products Edition 2006-03

Supersot 6

Abstract: Supersot6 electrical
Contextual Info: Discrete Temperature range Software version Revision date 2N3903 TO-92-3 Electrical 25°C N/A N/A FMB100 SuperSOT-6 Electrical 25°C 5.0 Apr 11, 2002 FMB5551 SuperSOT-6 Electrical 25°C 5.0 Apr 11, 2002 FMBA06 SuperSOT-6 Electrical N/A 5 Mar 13, 2002 FMBA14

Contextual Info: Issued Date : 04, Mar, 2011 Issued No. : K1104-11101-591 Messrs : Digi-Key RoHS Compliant Temperature Compensated Crystal Oscillator TCXO KT2016A26000ACW18TLG Technical Specification KYOCERA KINSEKI Corporation (1/6) Revision History Revision No. Revision

Contextual Info: Walsin Technology Corporation WA04X ±1%, Convex Type General purpose chip resistors array Size 0402x4 Customer : Approval No : Issue Date : Customer Approval : Page 1 of 7 WA04X_1% Version 6 Mar.-2007 Walsin Technology Corporation FEATURE 1. Small size and light weight

sk 1560

Abstract: DDR3 SODIMM SPD JEDEC hynix module suffix
Contextual Info: Preliminary 204pin DDR3 SDRAM SODIMMs DDR3 SDRAM Unbuffered SODIMMs Based on 1Gb A version HMT164S6AFP R 6C HMT112S6AFP(R)6C HMT125S6AFP(R)8C * Contents are subject to change without prior notice. Rev. 0.02 / Mar. 2008 1 HMT164S6AFP(R)6 HMT112S6AFP(R)6 HMT125S6AFP(R)8

PC2700S-25331

Abstract: DDR333 256MB CL2.5 PC3200S-3033 186-PIN DIMM
Contextual Info: Data Sheet, Rev. 0.5, Mar. 2005 HYS64D32000HDL–[5/6]–C HYS64D64020HDL–[5/6]–C 200-Pin Small Outline Dual-In-Line Memory Modules SO-DIMM DDR SDRAM RoHS Compliant Products Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-03 Published by Infineon Technologies AG,

FPT-208P-M04

Contextual Info: FUJITSU SEMICONDUCTOR MB91F361 General Specification MB91F361 – Specification MB91F361 General Specification Version 2.9 6-Aug-99  1999 Fujitsu Limited Revision History Revision 1.0 Date 16-Mar-98 1.1 1-Apr-98 1.2 2.0 2.1 2.2 2.3 14-May-98 6-Aug-98 19-Oct-98

AWM2100V

Contextual Info: < oò CD 00 X > O O CN o Lü O < CL R EVISIO NS A CORR TM M 1 MAR 88 PR - 17967 KAG 9 JAN 90 074438 J A F 6 JUL 93 5~E0 83 2 7 9 G JW 9 SEP 96 E C 083694 JA K 29 APR 97 F C 094375 TSM 23 MAR 99 LU ce o MASTER SPECIFICATIONS: AWM2100V RECOMMENDED EXCITATION

DDR400

Abstract: HYS72D32300GBR PC2700 PC3200
Contextual Info: Data Sheet, Rev. 1.0, Mar. 2004 HYS72D32300GBR–[5/6]–C HYS72D64300GBR–[5/6]–C HYS72D64320GBR–[5/6]–C HYS72D128320GBR–6–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Memory Products N e v e r s t o p t h i n k i n g .

HQN-384-01

Contextual Info: BCcomponents DATA SHEET MKP 338 6 Y2 Interference suppression film capacitors Product specification Supersedes data of 2001-09-13 File under BCcomponents, BC05 2002 Mar 15 BCcomponents Product specification Interference suppression film capacitors MKP RADIAL POTTED TYPE

Contextual Info: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1002 R07DS0313EJ1000 Previous: REJ03G0841-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1004 R07DS0314EJ1200 Previous: REJ03G0842-1100 Rev.12.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1004 R07DS0314EJ1200 Previous: REJ03G0842-1100 Rev.12.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1010 R07DS0316EJ0600 Previous: REJ03G0844-0500 Rev.6.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1002 R07DS0313EJ1000 Previous: REJ03G0841-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1004 R07DS0314EJ1200 Previous: REJ03G0842-1100 Rev.12.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1002 R07DS0313EJ1000 Previous: REJ03G0841-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1010 R07DS0316EJ0600 Previous: REJ03G0844-0500 Rev.6.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.