MAR-06 TRANSISTOR Search Results

ic str 6707

Abstract: marking code 10 sot23 str 6707 BCW69 BCW70 BCW71 BCW72 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCW69; BCW70 PNP general purpose transistors Product specification Supersedes data of 1997 Mar 06 1999 Apr 19 Philips Semiconductors Product specification PNP general purpose transistors BCW69; BCW70 FEATURES

BD230

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD226; BD228; BD230 NPN power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 06 Philips Semiconductors Product specification NPN power transistors

BD228

Abstract: BD226 BD230 BD227 BD229 BD231 Power Transistors TO-126 heatsink
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD226; BD228; BD230 NPN power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 06 Philips Semiconductors Product specification NPN power transistors

BC237B

Abstract: BC237 BC307 TRANSISTOR bc237b BC307B transistor bc237 bc307 pnp BC237 Philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC237; BC237B NPN general purpose transistors Product specification Supersedes data of 1997 Mar 06 File under Discrete Semiconductors, SC04 1997 Sep 04 Philips Semiconductors Product specification NPN general purpose transistors

BCW72

Abstract: BCW70 BCW71 BCW69 BCW71 failure
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCW71; BCW72 NPN general purpose transistors Product data sheet Supersedes data of 1997 Mar 06 1999 Apr 19 NXP Semiconductors Product data sheet NPN general purpose transistors BCW71; BCW72 FEATURES PINNING

SCR Applications Handbook

Abstract: 4814 mosfet chip N-Channel depletion mos mosfet 4430 MGE340 bsp124 microcontroller base scr phase control O41 DIODE OMIC PCA1070P
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCA1070 Multistandard programmable analog CMOS transmission IC Product specification Supersedes data of 1996 Mar 06 File under Integrated Circuits, IC03 1997 Jun 20 Philips Semiconductors Product specification Multistandard programmable analog

Contextual Info: STB/P300S SamHop Microelectronics Corp. Mar 06, 2007 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m W ) Max Rugged and reliable. 28 @ VGS = 10V 30V TO-220 and TO-263 Package.

mosfet mar 709

Abstract: MARKING CODE m33 transistor MAR 819 UHF Dual Gate BF909AR transistor MAR 825 bf909a 970310 marking CODE GG G1 TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF909A; BF909AR Dual-gate MOS-FETs Preliminary specification File under Discrete Semiconductors, SC07 1998 Mar 06 Philips Semiconductors Preliminary specification Dual-gate MOS-FETs BF909A; BF909AR FEATURES • Specially designed for use at 5 V supply voltage

903-949

Abstract: 74226 XP1001 13007-2 720-0164 4-01-3024 14364 62726 DM6030HK TS3332LD
Contextual Info: 35.0-45.0 GHz GaAs MMIC Buffer Amplifier B1005-BD March 2007 - Rev 06-Mar-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias +16 dBm P1dB Compression at Power Bias

MAX 77693

Abstract: 154407 672047 Mimix xb1005 190728 132-16 103-336-15 transistor RF S-parameters 443-958 319-770
Contextual Info: 35.0-45.0 GHz GaAs MMIC Buffer Amplifier B1005-BD March 2007 - Rev 06-Mar-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias +16 dBm P1dB Compression at Power Bias

SCL 8018

Abstract: DM6030HK TS3332LD XB1008-BD XB1008-BD-000V XB1008-BD-EV1 transistor 7809
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD March 2007 - Rev 06-Mar-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing

B1007

Abstract: DM6030HK TS3332LD XB1007-BD XB1007-BD-000V XB1007-BD-EV1
Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier B1007-BD March 2007 - Rev 06-Mar-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing

mar-06

Abstract: STM8306 m8306 diode AR s1 52
Contextual Info: S T M8306 S amHop Microelectronics C orp. Mar.06, 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -6A

LT2301A

Contextual Info: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V

IT7001M

Abstract: SP14Q002-C1 transistor Y317 mar-06 MN73099HED CFL lamp 2SA1036K mn73099 it7001
Contextual Info: KAOHSIUNG HITACHI ELECTRONICS CO.,LTD P.O. BOX 26-27 2,13TH EAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 821-5811 ( 7 LINE) FAX:(07) 821-5815 DATE. Mar.06,2009 FOR MESSRS. CUSTOMER’S ACCEPTANCE SPECIFICATIONS SP14Q002-C1 CONTENTS No. ITEM SHEET No.

SP14Q002-A1

Abstract: SP14Q002-A1-6 IT7001M mar-06
Contextual Info: KAOHSIUNG HITACHI ELECTRONICS CO.,LTD P.O. BOX 26-27 2,13TH EAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 821-5811 ( 7 LINE) FAX:(07) 821-5815 FOR MESSRS. DATE. Mar.06,2009 CUSTOMER’S ACCEPTANCE SPECIFICATIONS SP14Q002-A1 CONTENTS No. ITEM SHEET No.

BSS63

Abstract: BSS64
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BSS64 NPN high voltage transistor Product data sheet Supersedes data of 2004 Jan 16 2004 Mar 12 NXP Semiconductors Product data sheet NPN high voltage transistor BSS64 FEATURES PINNING • Low current max. 100 mA

TS78L05I

Contextual Info: TS78L00I Series 3-Terminal 100mA Positive Voltage Regulator TO-92 Pin Definition: 1. Output 2. Ground 3. Input SOT-23 Pin Definition: SOP-8 Pin Definition: 1. Output 8. Input 2. Ground 7. Ground 3. Ground 6. Ground 4. N/C 5. N/C 1. Output 2. Input 3. Ground

sot-23 marking RIP

Abstract: marking code AC sot 23-5 N mosfet sot-23 marking ND l5308 sot-89 MARKING code ge regulator 30A sot-89 38LX marking code AD sot 23-5 sot 23-5 marking code MARKING A7 transistor
Contextual Info: APL5308/9 Low IQ, Low Dropout 300mA Fixed Voltage Regulator Features General Description • • • The APL5308/9 series are micropower, low dropout linear regulators, which operate from 2.7V to 6V input voltage and deliver up to 300mA. Typical dropout voltage is only 400mV at 300mA loading. Designed

to220 amps 1200 v

Abstract: AP1184 25V Electrolytic capacitor
Contextual Info: AP1184 4A Ultra Low Dropout Positive or Fixed-mode Regulator General Description Feature AP1184 is a 4A regulator with extremely low dropout voltage. This product is specifically designed to provide well regulated supply for applications requiring 2.8V or lower voltages from

SPL10A2

Abstract: LCD Controller transistor MAR 439 watch lcd display 00FF 7 SEGMENT DISPLAY 313 transistor DA 313 transistor crystal oscillator 32768hz LCD display
Contextual Info: SPL10A2 7KB LCD CONTROLLER/DRIVER GENERAL DESCRIPTION FEATURES The SPL10A2 is a CMOS 8-bit single chip micro-controller which Built-in 8-bit CPU contains LCD drivers, ROM, SRAM, I/O, timer/counter and audio Operating voltage: 2.4V to 5.5V output on a single chip.

c 5664 pinout

Abstract: 3055L
Contextual Info: Tem ic L65664 Semi c on du ct o rs 8 K X 8 / 3.3 Volts Very Low Power CMOS SRAM Introduction The L65664 is a very low power CMOS static RAM organized as 8192 x 8 bits. It is manufactured using the TEMIC high performance SCMOS technology. current typical value = 0.1 jiA with a fast access time of

RSN 315 H 42

Abstract: RSN 314 H 41 rsn 315 LADR2 RSN 310 R 36 rsn 313 HFD27 HFD23 addressing modes 8086 AY 5 4700
Contextual Info: REJ09B0429-0100 16 H8S/2164 Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2400 Series H8S/2164 Rev.1.00 Revision Date: Mar. 17, 2008 R4F2164 Rev. 1.00 Mar. 17, 2008 Page ii of xl Notes regarding these materials 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate

log tx2 1122

Abstract: LG.Philips LCD circuit DFP 830 MDR connector 20pin LG.Philips LCD LM220W1-A2MN lcd Inverter Delta MDR dfp 26 pin plug dfp cable D8211
Contextual Info: SPECIFICATIONS TITLE: LM220W1-A2MN LIQUID CRYSTAL DISPLAY LM220W1 REV. 1.0 PAGE 1 OF 1 DATA DISPLAY AG LM220W1-A2MN 22“ TFT LCD PRELIMINARY SPECIFICATION The information given in this document is carefully checked and believed to be reliable. Data Display reserves the right to