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mosfet ftr 03

Abstract: FTR 02 2SK2459N SC-75A mosfet 4501 mosfet 2sk* to-92
Contextual Info: Transistors Switching 200V, 5A 2SK2459N •Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at Vqss = ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. •External dimensions (Units: mm)

2SK2460N

Abstract: mosfet ftr 03 251C SC-75A mosfet 2sk* to-92
Contextual Info: Transistors Switching 250V, 5A 2SK2460N •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Low on-resistance. 2) -, +0.3 High-speed switching. 3 - 0.1 e+0.3 *—0.1 3) Wide SOA (safe operating area). Ö+0.2 4) Gate-source voltage guaranteed at V gss = ± 3 0 V .

mosfet ftr 03

Abstract: 2SK2711 SC-75A mosfet 2sk* to-92 oc sc-62 mosfet
Contextual Info: Transistors Switching 250V, 16A 2SK2711 •F e a tu re s •E x te rn a l dim ensions (Units: mm) 1 ) Low on-resistance. , 5 + o .a 4 . 5 - 0 ., 10.0+23 2) High-speed switching. „+0.2 •8—0.1 3) W ide SOA (safe operating area). 4) G a te-so urce v o lta g e g u ara ntee d

2SA1920

Abstract: a32s 96-113-A32S 2SA1870 SC-75A two transistors TO-92 VCEO400V
Contextual Info: 2SA1920 2SA1870 Transistors High-voltage switching Transistor Camera strobes and Telephone, Power supply I 2S A 19 20 • A b s o lu t e m axim um ratings (T a —2 5 ^ ) •F e a t u r e s 1 ) High breakdown voltage. 2) (V ceo“ — 4 0 0 V ) 3 ) Fast switching, ( t f : Typ. 1

Contextual Info: DTA014T series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCEO Value IC -100mA R1 10kΩ VMT3 EMT3F -50V DTA014TM (SC-105AA) l Features 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of

Contextual Info: DTC113Z series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 1kΩ 10kΩ UMT3 SMT3 50V R2 DTC113ZUA DTC113ZKA SOT-323(SC-70) SOT-346(SC-59)

Contextual Info: DTA043E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 4.7kΩ 4.7kΩ VMT3 EMT3F -50V l Features 1) Built-In Biasing Resistors, R1 = R2 = 4.7kΩ 2) Built-in bias resistors enable the configuration of

Contextual Info: DTA144T series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCEO Value IC -100mA R1 47kΩ VMT3 EMT3 -50V DTA144TM (SC-105AA) l Features 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of

Contextual Info: DTA123Y series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 2.2kΩ 10kΩ EMT3 UMT3 -50V l Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of

Contextual Info: DTC144T series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCEO Value IC 100mA R1 47kΩ VMT3 EMT3 50V DTC144TM (SC-105AA) DTC144TE SOT-416(SC-75A) UMT3 l Features 1) Built-In Biasing Resistor

Contextual Info: DTC023E series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value 50V IC(MAX.) 100mA R1 R2 2.2kΩ 2.2kΩ l Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ 2) Built-in bias resistors enable the configuration of

Contextual Info: DTA023Y series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value -50V IC(MAX.) -100mA R1 R2 2.2kΩ 10kΩ l Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of

Contextual Info: DTC023J series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Builtin Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 2.2kΩ 47kΩ VMT3 EMT3F 50V l Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of

Contextual Info: DTA143T series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCEO Value IC -100mA R1 4.7kΩ VMT3 EMT3F -50V DTA143TM (SC-105AA) l Features 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of

Contextual Info: DTC123E series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 2.2kΩ 2.2kΩ VMT3 EMT3 50V DTC123EM DTC123EE (SC-105AA) SOT-416(SC-75A) UMT3 l Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ

Contextual Info: 2SC6079 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6079 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE sat = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 µs (typ) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Power Switching Applications Unit: mm Low collector emitter saturation voltage : VCE sat = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 µs (typ) Absolute Maximum Ratings (Ta = 25°C)

2SC5563

Contextual Info: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.0 pF typ. (VCB = 100 V) Absolute Maximum Ratings (Tc = 25°C) Characteristics

Contextual Info: DTA114E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value -50V IC(MAX.) -100mA R1 R2 10kΩ 10kΩ l Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of

Contextual Info: DTC143X series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 4.7kΩ 10kΩ VMT3 EMT3F 50V l Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of

DTC124E

Contextual Info: DTC124E series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 22kΩ 22kΩ VMT3 EMT3F 50V l Features 1) Built-In Biasing Resistors, R1 = R2 = 22kΩ 2) Built-in bias resistors enable the configuration of

Contextual Info: DTA124E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 22kΩ 22kΩ VMT3 EMT3F -50V l Features 1) Built-In Biasing Resistors, R1 = R2 = 22kΩ 2) Built-in bias resistors enable the configuration of

Contextual Info: DTC125TUA / DTC125TKA / DTC125TSA Transistors Digital transistor built-in resistor DTC125TUA / DTC125TKA / DTC125TSA 0.1to0.4 (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) Junction temperature Tj Tstg Storage temperature 200 Pc 300 150 −55 ~ +150

DTB543EE

Abstract: DTB543EM SC-75A
Contextual Info: DTB543EE / DTB543EM Transistors -500mA / -12V Low VCE sat Digital transistors (with built-in resistors) DTB543EE / DTB543EM zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm) DTB543EE 0.7 1.6 0.55 0.3 zFeature 1) VCE (sat) is lower than conventional products.