MAKING 1200 Search Results

APT13GP120K

Abstract: 65a3
Contextual Info: APT13GP120K 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

APT13GP120BSC

Abstract: T0-247
Contextual Info: APT13GP120BSC 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

13GP12

Contextual Info: APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

IC 7415

Abstract: APT13GP120K mosfet 600V 50A
Contextual Info: APT13GP120K 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

APT13GP120K

Abstract: IGBT 600V 5A cost DIODE TO-220 1200V 11A TO-220 1200V 11A
Contextual Info: APT13GP120K 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

APT13GP120B

Abstract: T0-247 65a3
Contextual Info: APT13GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

13GP12

Abstract: APT13GP120BD1 13gp120bd1
Contextual Info: APT13GP120BD1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

65a3

Abstract: APT13GP120B T0-247
Contextual Info: APT13GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

IC 7414 datasheet

Abstract: IC 7414 APT13GP120BDF1 T0-247 13A 600V TO247 IGBT
Contextual Info: APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

Contextual Info: APT13GP120BDF1 APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

MOSFET 25A 600V

Abstract: APT25GP120BDF1 T0-247 IC-125A mosfet 1200V 25A
Contextual Info: APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power

Contextual Info: Microelectronics Limited 1.5 AMP, 3-TERMINAL NEGATIVE REGULATORS \P12QA, IP120, LM120, IP7900A Series, IP7900 Series DESCRIPTION The IP120A/IP7900A/IP7900 series of threeterminal regulators is available with several fixed output voltages making them useful in

2SC4272

Abstract: ITR06606 ITR06607 ITR06608 ITR06611
Contextual Info: 2SC4272 Ordering number : EN2970A SANYO Semiconductors DATA SHEET 2SC4272 NPN Epitaxial Planar Silicon Transistor 27MHz CB Transceiver Driver Applications Features • Small size making it easy to provide high-density, small-sized hybrid ICs. Specifications

Mil-T-23648

Contextual Info: Silicon PTC Thermistors Description The positive temperature coefficient of resistance is very large: approximately 0.7%/°C, making these units ideal for use in temperature compensating and sensing applications. Applications include amplifiers, power supplies, transducers,

Contextual Info: Type CGH 85 ºC Computer Grade Aluminum Electrolytic Capacitor 85 ºC, Screw Terminal Capacitors Type CGH screw terminal, computer grade aluminum electrolytic capacitors have excellent reliability and a high ripple current capability making them suitable for

DU100

Contextual Info: Description The positive temperature coefficient of resistance is very large: approximately 0.7%/°C, making these units ideal for use in temperature compensating and sensing applications. Applications include amplifiers, power supplies, transducers, telemetry, computers, magnetic amplifiers, thermometry,

TMP92FD23A

Contextual Info: TOSHIBA Original CMOS 32-Bit Microcontroller TLCS-900/H1 Series TMP92CD23AFG TMP92CD23ADFG Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Notes and Restrictions”.

AAT4610A

Abstract: AAT4610AIGV-1-T1 AAT4610AIGV-T1 AAT4610AIJS-1-T1 AAT4610AIJS-T1 SC70JW-8 AAT4610AIGV-1 SOT23-5 313
Contextual Info: AAT4610A Current Limited Load Switch General Description Features The AAT4610A SmartSwitch is a current limited Pchannel MOSFET power switch designed for highside load switching applications. This switch operates with inputs ranging from 2.4V to 5.5V, making it

A42 B331

Abstract: 96182 eaton eaton 96182 MS27903-1 ms90311 mil-s-8834 NEC k719 ms24547-1 MS25237 nec k591
Contextual Info: Electric Distribution & Controls Switch Catalog Making the Best Better Traditional aerospace component suppliers are being asked to assume even greater levels of responsibility. One trend is that component manufacturers are being asked to increase their subsystem integration

AAT4610

Abstract: AAT4610A AAT4610IGV-1-T1 AAT4610IGV-T1
Contextual Info: AAT4610 Current Limited Load Switch General Description Features The AAT4610 SmartSwitch is a current limited Pchannel MOSFET power switch designed for highside load switching applications. This switch operates with inputs ranging from 2.7V to 5.5V, making it

marking 1L

Abstract: 1L transistor 3 pin 1L MARKING
Contextual Info: SQ2181 CMOS Positive Voltage Regulator Elektronische Bauelemente RoHS Compliant Product Description The SQ2181 of positive, linear requlator feature low quiescent current 50 µA typ. with low dropout voltage and excellent PSRR, thus making them ideal for

1K182

Abstract: 1K28
Contextual Info: SQ2171 CMOS Positive Voltage Regulator Elektronische Bauelemente RoHS Compliant Product Description The SQ2171 of positive, linear requlator feature low quiescent current 50 µA typ. with low dropout voltage and excellent PSRR, thus making them ideal for

ABB DATA SHEET DCS

Abstract: SH7751 EPF10K20RC208-3 Hitachi DSA00380
Contextual Info: SH7641 E10A Emulator User’s Manual SH7641 E10A HS7641KCM01HE Renesas Microcomputer Development Environment System Rev.1.00 2003.6.26 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor

Contextual Info: TYPICAL PERFORMANCE CURVES APT25GP120BDF1 APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power