MACOM MMIC RF AMP Search Results

Contextual Info: April 28, 2014 MACOM Launches New X-Band High Power Amplifiers for Commercial Radar and Communication Applications Two-stage and three-stage MMIC Amplifiers Boast up to 41dBm of Saturated Pulsed Output Power and 40% Power Added Efficiency LOWELL, Mass.- BUSINESS WIRE - M/A-COM Technology Solutions Inc. ("MACOM"), a leading supplier of high performance

Contextual Info: M/A-COM Technology Solutions Inc. 100 Chelmsford Street Lowell, Massachusetts 01851 +1 978.656.2500 macomtech.com PRESS RELEASE MACOM Launches New X-Band High Power Amplifiers for Commercial Radar and Communication Applications Two-stage and three-stage MMIC Amplifiers Boast up to 41dBm of Saturated Pulsed Output Power and 40%

Contextual Info: March 17, 2014 MACOM Introduces Industry's Highest Power, Full E-Band MMIC Power Amplifier Delivers typical saturated output power Psat of 25.5 dBm across the 71 to 86 GHz frequency range for high bandwidth, long distance point to point wireless backhaul

Contextual Info: MAAP-011106 Power Amplifier, 71 - 86 GHz Rev. V1 Features •           Chip Device Layout 4 Stage Power Amplifier for E Band 20 dB Gain 15 dB input and output match 25 dBm saturated output power 30 dBm OIP3 Variable gain with adjustable bias

Contextual Info: October 7, 2014 MACOM Enables Designers to Achieve High Linear Power and Gain Control over the Full EBand Spectrum with New 4 Stage E-Band Driver Amplifier Device delivers typical saturated output power Psat of 24 dBm across the 71 to 86 GHz frequency range for high capacity

MAAP-015036

Contextual Info: MAAP-015036 Power Amplifier, 15 W 8.5 - 10.5 GHz Rev. V1 Features Functional Schematic •       15 W Power Amplifier 42 dBm Saturated Pulsed Output Power 17 dB Large Signal Gain PSAT >40% Power Added Efficiency Dual Sided Bias Architecture

Contextual Info: July 1, 2014 MACOM Extends Wired Broadband Portfolio with High Linearity Reverse Path Variable Gain Amplifier This Variable Gain Amplifier boasts excellent linearity and output power for DOCSIS 3.1 network access equipment LOWELL, Mass.- BUSINESS WIRE - M/A-COM Technology Solutions Holdings Inc. ("MACOM"), a leading supplier of high

Contextual Info: MAAP-015024 Power Amplifier, 8 W 14.5 - 17.5 GHz Rev. V3 Features •       Functional Schematic 8 W Power Amplifier 20 dB Small Signal Gain 39 dBm Saturated Pulsed Output Power Dual Sided Bias Architecture 100% On-wafer DC & RF Power Tested

MAAP-000071-MCH000

Abstract: MAAP-000071-PKG003 MAAP-000071-SMB003 MAAP-000071-SMB004 S2083 VD12
Contextual Info: RoHS Compliant MAAP-000071-PKG003 Amplifier, Power, 1.6W 12.75-15.35 GHz N/C RF IN N/C N/C VGG Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM’s GaAs Multifunction SelfAligned Gate MSAG Process. M/A-COM’s MSAG process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors

MAAPGM0069-DIE

Abstract: MAAP-000069-MCH000 MAAP-000069-PKG003 MAAP-000069-SMB003 MAAP-000069-SMB004 S2083 AP069G
Contextual Info: RoHS Compliant MAAP-000069-PKG003 Amplifier, Power, 2W 7.1-11.7 GHz Rev — Advance Information Features ♦ 2 Watt Saturated Output Power Level ♦ Variable Drain Voltage 6-10V Operation ♦ MSAG Process Description YYWW AP069G XXXX MACOM The MAAP-000069-PKG0003 is a 4-stage 2 W power amplifier with on-chip bias networks in a 20 lead MLP package,

AP067G

Abstract: APO67G MAAP-000067-PKG0003 MAAP-000067-PKG003
Contextual Info: RoHS Compliant MAAP-000067-PKG003 Amplifier, Power, 2.5W 5.7-8.5 GHz Rev — Advance Information Features ♦ 2.5 Watt Saturated Output Power Level ♦ Variable Drain Voltage 6-10V Operation ♦ MSAG Process Description YYWW AP067G XXXX MACOM The MAAP-000067-PKG0003 is a 3-stage 2.5 W power amplifier

Contextual Info: MAAP-011106 Power Amplifier, 71 - 86 GHz Preliminary - Rev. V1P Features •           Chip Device Layout 4 Stage Power Amplifier for E Band 20 dB Gain 15 dB input and output match 25 dBm saturated output power 30 dBm OIP3 Variable gain with adjustable bias

AP070G

Abstract: APO70G MAAP-000070-PKG003 S2083 MAAP-000070-MCH000 MAAP-000070-SMB003 MAAP-000070-SMB004 VD12
Contextual Info: RoHS Compliant MAAP-000070-PKG003 Amplifier, Power, 1.6W 10.0-13.25 GHz RF IN N/C N/C M/A-COM’s MSAG process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, lownoise, switch and digital FETs on a single chip. The use of refractory metals and the absence of platinum in the gate metal

XD1008-BD-000V

Contextual Info: XD1008-BD Distributed Amplifier 30 kHz - 40 GHz Rev. V1 Features Chip Device Layout •     15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: MAAP-015030 Power Amplifier, 13 W 8.5 - 11.75 GHz Rev. V2 Features •        12 W X-Band Power Amplifier 21 dB Large Signal Gain 41 dBm Saturated Pulsed Output Power 40% Power Added Efficiency On Chip Gate Bias Circuit 100% On-wafer DC & RF Power Tested

Contextual Info: MAAL-011111 Low Noise Amplifier 22 - 38 GHz Rev. V1 Features •      Functional Block Diagram 19 dB Small Signal Gain 2.5 dB Noise Figure Single +3.3 V Bias Lead-Free 3 mm 16-Lead PQFN Package 100% RF Tested RoHS* Compliant and 260°C Reflow Compatible

Contextual Info: ASL882 ASL882 Data Sheet 1.2 GHz CATV Push-pull Amplifier MMIC 1. Product Overview 1.1 Features • 50 ~ 1200 MHz Bandwidth  22.3 dB High Gain at 1 GHz  Positive Gain Slope  High Output Power: 110 dBV  Robust under Hard Operating Conditions

Contextual Info: XP1027-BD Power Amplifier 27 - 31 GHz Rev. V2 Features 2 5 4 3 V D3 VG3 VD2 V G2 VD1 Functional Diagram Ka-Band 4 W Power Amplifier Balanced Design, Good Input / Output Match 25 dB Small Signal Gain 35 dBm Saturated Output Power 43 dBm Output Third Order Intercept OIP3

MACOM MMIC RF AMP

Contextual Info: A fa Silicon Bipolar MMIC Cascadable Amplifier \ M a n A M PP tcom pan y MA4TD4135, MA4TD4136 V3.00 Features Ceramic Microstrip Case Style Outlines1>2>3 • Cascadable 50£2 Gain Block • 3dB Bandwidth: DC to 1.0 GHz • 15.0 dB Typical Gain @ 0.5 GHz • Unconditionally Stable k>l

Contextual Info: Silicon Bipolar MMIC Cascadable Amplifier MA4TD4135, MA4TD4136 V3.00 Ceramic Microstrip Case Style Outlines1,2,3 Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to 1.0 GHz • 15.0 dB Typical Gain @ 0.5 GHz • Unconditionally Stable k>1 • 3.3 Volt Operation

Contextual Info: MAAP-015035 Power Amplifier, 12 W 8.5 - 11.5 GHz Rev. V1 Features •        12 W X-Band Power Amplifier 36 dB Small Signal Gain 41 dBm Saturated Pulsed Output Power 40% Power Added Efficiency On Chip Gate Bias Circuit 100% On-wafer DC & RF Power Tested

MACOM MMIC RF AMP

Abstract: SW-338 SWD-109 SWD-119 DC bias of gaas FET
Contextual Info: Mfecm Application Note M an A M P com pany Drivers for GaAs FET MMIC Switches and Digital Attenuators M539 V 2.00 Application Note Design Considerations M/A-COM's Microelectronics Division produces a silicon CMOS Application Specific Integrated Circuit ASIC that

915 MHz RFID reader

Contextual Info: MAAP-007649-000100 Ultra Linear 2W Power Amplifier 800 to 1000 MHz Product Image Features • • • • • • • • • • Rev. V4 HIGH Gain: 19 dB TYP. HIGH P1dB: +34.0 dBm (TYP.) HIGH OIP3: +49.5 dBm (TYP.) 50% PAE @ P1dB Optimized Performance for RFID Bands

S2083

Abstract: MAAP-000064-SMB004 MAAP-000064-PKG003 MAAPGM0064
Contextual Info: RoHS Compliant MAAP-000064-PKG003 Amplifier, Power, 2W 6.5-9.5 GHz Rev Advance Information Features ♦ 2 Watt Saturated Output Power Level ♦ Variable Drain Voltage 6-10V Operation ♦ MSAG Process Description YYWW AP064G XXX MACOM The MAAP-000064-PKG003 is a 2-stage 2.0 W power amplifier