MA721WS Search Results
MA721WS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: MA721WS SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For super-high speed switching circuit For small current rectification Absolute Maximum Ratings Tj = 25℃ Parameter Symbol Value Unit Reverse Voltage (DC) VR 30 V Peak Forward Current IFM 300 mA Average Forward Current |
Original |
MA721WS OD-323 | |
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Contextual Info: MA721WS SILICON EPITAXIAL SCHOTTKY BARRIER DIODE PINNING Applications • Super-high speed switching circuit • Small current rectification DESCRIPTION PIN 1 Cathode 2 Anode 2 1 DO Top View Marking Code: "DO" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC |
Original |
MA721WS OD-323 OD-323 | |
|
Contextual Info: MA721WS SILICON EPITAXIAL SCHOTTKY BARRIER DIODE PINNING Applications • Super-high speed switching circuit • Small current rectification DESCRIPTION PIN 1 Cathode 2 Anode 2 1 DO Top View Marking Code: "DO" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC |
Original |
MA721WS OD-323 OD-323 | |
|
Contextual Info: MA721WS SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For super-high speed switching circuit For small current rectification Absolute Maximum Ratings Tj = 25℃ Parameter Symbol Value Unit Reverse Voltage (DC) VR 30 V Peak Forward Current IFM 300 mA Average Forward Current |
Original |
MA721WS OD-323 |