MA2ZD12 Search Results

DS1125

Abstract: XN0NE92
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0NE92 Silicon P-channel MOSFET (FET) Silicon epitaxial planar type (SBD) Unit: mm 2 10˚ (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 SBD Rating Unit VDSS −12 V VGSS ±15

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN0NE92 Silicon P-channel MOSFET (FET) Silicon epitaxial planar type (SBD) Unit: mm 2 10˚ (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 SBD Rating Unit VDSS −12 V VGSS ±15 V

DS1125

Abstract: MOSFET MARKING 3F XN0NE92 FET MARKING
Contextual Info: Composite Transistors XN0NE92 Silicon P-channel MOSFET FET Silicon epitaxial planar type (SBD) Unit: mm 2 10˚ (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 SBD Rating Unit VDSS −12 V VGSS ±15 V Drain current ID −1.2 A Peak drain current IDP −3 A Total power dissipation *