MA2YD15 Search Results
MA2YD15 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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MA2YD15 |
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Schottky Barrier Diodes (SBD) | Original | 63.21KB | 3 | ||
MA2YD1500L |
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Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 1A MINI2 | Original | 3 |
MA2YD15 Price and Stock
Panasonic Electronic Components MA2YD1500LDIODE SCHOTTKY 20V 1A MINI2-F1 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MA2YD1500L | Reel | 3,000 |
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MA2YD15 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Schottky Barrier Diodes SBD MA2YD15 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.80±0.05 1.6±0.1 1 0 to 0.1 • Features 5° 2.6±0.1 3.5±0.1 • IF(AV) = 1 A rectification is possible • Low forward voltage VF • Small reverse current IR |
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MA2YD15 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2YD15 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.80±0.05 1.6±0.1 1 0 to 0.1 • Features 5˚ 2.6±0.1 3.5±0.1 • Forward current (Average) IF(AV) = 1 A rectification is possible |
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2002/95/EC) MA2YD15 | |
MA2YD150GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2YD150G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high frequency rectification • Features ■ Package • Forward current (Average) IF(AV) = 1 A rectification is possible |
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2002/95/EC) MA2YD150G MA2YD150G | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2YD15 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.80±0.05 1.6±0.1 1 0 to 0.1 • Features 2.6±0.1 3.5±0.1 5˚ M Di ain sc te on na |
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2002/95/EC) MA2YD15 | |
MA2YD15Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2YD15 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.80±0.05 1.6±0.1 M Di ain sc te on na tin nc ue e/ d 1 0 to 0.1 5˚ ue pl d in an c |
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2002/95/EC) MA2YD15 MA2YD15 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2YD15 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.80±0.05 1.6±0.1 1 0 to 0.1 • Features 5˚ 2.6±0.1 3.5±0.1 • Forward current (Average) IF(AV) = 1 A rectification is possible |
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2002/95/EC) MA2YD15 | |
Contextual Info: MA2YD15 Silicon epitaxial planar type For high-frequency rectification For protection against reverse current Unit: mm 0.80±0.05 1.6±0.1 • Features 1 0 to 0.1 5˚ 2.6±0.1 3.5±0.1 • Mini package Flat-mini type 2-pin • Low forward voltage VF (VF < 0.45 V) |
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MA2YD15 N-50BU PG-10N) SAS-8130) | |
MA2YD150GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2YD150G Silicon epitaxial planar type For high frequency rectification • Features ■ Package • Forward current (Average) IF(AV) = 1 A rectification is possible |
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2002/95/EC) MA2YD150G MA2YD150G | |
diodes ir
Abstract: sine wave generator MA2YD15
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MA2YD15 diodes ir sine wave generator MA2YD15 | |
MA2YD15Contextual Info: Schottky Barrier Diodes SBD MA2YD15 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.80±0.05 1.6±0.1 1 0 to 0.1 • Features 5° 2.6±0.1 3.5±0.1 • IF(AV) = 1 A rectification is possible • Low forward voltage VF • Small reverse current IR |
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MA2YD15 MA2YD15 | |
MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
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PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent | |
ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
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respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01 | |
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
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responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE | |
S-Mini
Abstract: SSMini s-mini 2-pin package
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MA2Q705) S-Mini SSMini s-mini 2-pin package | |
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Contextual Info: New Mid-Power Low VF Schottky Barrier Diode Overview Panasonic Schottky Barrier Diode series are ideal for use in the power sopplies of computers and portable equipment. With package configurations that range from Mini Type:2-pin to New Mini Power Type:2-pin packages, these diodes |
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OD-123) OD-106) | |
CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
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5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al | |
k11 zener diode
Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
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MA24D56 MA24D58 MA24D70 MA24D74 MA3D749 MA3D749A MA3D750 MA3D750A MA3D752 MA3D752A k11 zener diode zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3 | |
Contextual Info: New Mid-Power Low VF Schottky Barrier Diode Overview Panasonic Schottky Barrier Diodes series are ideal for power source of computers and portable equipments. Low VF design 15 to 35% lower than our conventional products reduces power consumption and enhances equipment efficiency. |
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RS-232 to i2c converter
Abstract: RS-232 to i2c rs232 to I2c SFP layout design fiber TRANSCEIVER CIRCUIT DIAGRAM rs232 i2c to RS-232 converter maxim rs232 i2c pic16f628 HFRD-15 SFP module MA2YD15
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HFRD-15 RS-232 20mil 50mil 10mil RS-232 to i2c converter RS-232 to i2c rs232 to I2c SFP layout design fiber TRANSCEIVER CIRCUIT DIAGRAM rs232 i2c to RS-232 converter maxim rs232 i2c pic16f628 SFP module MA2YD15 | |
2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
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XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 | |
MA716
Abstract: MA7D50 ma741 MA10799
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MA10700) MA10701) MA10702) MA10703) MA10704) MA10705) MA10798) MA10799) MA4S713) MA6S718) MA716 MA7D50 ma741 MA10799 | |
crystal 3.68mhz
Abstract: P10 led module CONNECT P10 led module DS3900 DS1803 DS3900EVKIT MA2YD15 MAX3223 PIC16LF628
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DS3900 DS1848 DS3900 crystal 3.68mhz P10 led module CONNECT P10 led module DS1803 DS3900EVKIT MA2YD15 MAX3223 PIC16LF628 | |
Contextual Info: Characteristics Quick Reference Guide • SBD for Power Electrical characteristics Ta = 25°C VRRM IF(AV) (V) (A) 30 30 Package Single-chip type VF max. (V) 20 5 0.47 MA3D798 10 3 0.47 MA3D799 TO-220D-B1 (2-pin) 1 40 45 5 50 3 1 TO-220D-A1 (3-pin) 0.55 3 |
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MA2D760 MA3D761 MA2D755 MA3D756 MA3D760 MA3U760 MA3D752 MA3D752A MA3D755 MA3U755 | |
zener diode SMD marking code 27 4F
Abstract: smd diode schottky code marking 2F smd zener diode code 5F panasonic MSL level smd zener diode code a2 SMD ZENER DIODE a2 smd zener 27 2f SMD zener marking code 102 A2 SMD zener SMD MARK A1
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2002/95/EC) zener diode SMD marking code 27 4F smd diode schottky code marking 2F smd zener diode code 5F panasonic MSL level smd zener diode code a2 SMD ZENER DIODE a2 smd zener 27 2f SMD zener marking code 102 A2 SMD zener SMD MARK A1 |