M76 MARKING Search Results

Contextual Info: SN65LVDM176 www.ti.com SLLS320D – DECEMBER 1998 – REVISED JULY 2000 HIGH-SPEED DIFFERENTIAL LINE TRANSCEIVER FEATURES • • • • • • • • • • • • Low-Voltage Differential Driver and Receiver for Half-Duplex Operation Designed for Signaling Rates of 400 Mbit/s

Contextual Info: SN65LVDM176 www.ti.com SLLS320D – DECEMBER 1998 – REVISED JULY 2000 HIGH-SPEED DIFFERENTIAL LINE TRANSCEIVER FEATURES • • • • • • • • • • • • Low-Voltage Differential Driver and Receiver for Half-Duplex Operation Designed for Signaling Rates of 400 Mbit/s

Contextual Info: 50 CMC 14 Common Mode Chokes Series High Grade - Improved Temperature Stability Less than 20 % performance variations versus temperature - 55 °C / + 125 °C Minimum impedance attenuation : 100 Ω from 100 kHz to 30 MHz Compact SMD package ( 2 x4 pins)

RNR55C

Abstract: RNR55 RNR55 resistor RNR ANGSTROHM RNR55E fsrj MIL-PRF-55182 P125 RNR75 RNR55C100
Contextual Info: HDN Military RNR/RNN Vishay Angstrohm Metal Film Resistors, Military/Established Reliability, Hermetically-Sealed, MIL-PRF-55182 Qualified, Precision, Type RNR, Characteristics E and C FEATURES • Qualified to MIL-PRF-55182 Characteristics E and C (E only for RNR75)

RNR55

Abstract: M76 marking RNR55C HDN (Military RNR) RNC RESISTORS RNR ANGSTROHM MIL-PRF-55182 RNR57 RNR60 RNR65
Contextual Info: HDN Military RNR/RNN Vishay Angstrohm Hermetic Metal Film Resistors, Military/Established Reliability, MIL-PRF-55182 Qualified, Type RNR, Characteristics E and C FEATURES • Qualified to MIL-PRF-55182 Characteristics E and C (E only for RNR75) • Performance

RNR55

Abstract: RNR ANGSTROHM RNR55C M76 marking HDN (Military RNR) RNR55E HDN55 RNR57 RNR60 RNR65
Contextual Info: HDN Military RNR/RNN Vishay Angstrohm Hermetic Metal Film Resistors, Military/Established Reliability, MIL-PRF-55182 Qualified, Type RNR, Characteristics E and C FEATURES • Qualified to MIL-PRF-55182 Characteristics E and C (E only for RNR75) • Performance

HDN (Military RNR)

Abstract: HDN55
Contextual Info: HDN Military RNR/RNN www.vishay.com Vishay Angstrohm Metal Film Resistors, Military/Established Reliability, Hermetically-Sealed, MIL-PRF-55182 Qualified, Precision, Type RNR, Characteristics E and C FEATURES • Qualified to MIL-PRF-55182 characteristics E and C

RNR55C

Abstract: RNR55E RNR55C1002 vishay rnc HDN (Military RNR) ERC (Military RNC) HDN55
Contextual Info: HDN Military RNR/RNN Vishay Angstrohm Metal Film Resistors, Military/Established Reliability, Hermetically-Sealed, MIL-PRF-55182 Qualified, Precision, Type RNR, Characteristics E and C FEATURES • Qualified to MIL-PRF-55182 characteristics E and C (E only for RNR75)

RNR55

Abstract: RNR55C RNR55C1002 HDN (Military RNR) ERC (Military RNC) HDN55
Contextual Info: HDN Military RNR/RNN Vishay Angstrohm Metal Film Resistors, Military/Established Reliability, Hermetically-Sealed, MIL-PRF-55182 Qualified, Precision, Type RNR, Characteristics E and C FEATURES • Qualified to MIL-PRF-55182 characteristics E and C (E only for RNR75)

cmc17

Abstract: Microspire* CMC 17 marking M99 Microspire* CMC 1 CMC17-5M8-1WR CMC14 m56 avionics 1255 Microspire CMC14 CMC17-1M2-1WR
Contextual Info: 50 CMC 14 Common Mode Chokes Series High Grade - Improved Temperature Stability Less than 20 % performance variations versus temperature - 55 °C / + 125 °C Minimum impedance attenuation : 100 Ω from 100 kHz to 30 MHz Compact SMD package ( 2 x4 pins)

Contextual Info: 50 CMC 14 Common Mode Chokes Series High Grade - Improved Temperature Stability Less than 20 % performance variations versus temperature - 55 °C / + 125 °C Minimum impedance attenuation : 100 Ω from 100 kHz to 30 MHz Compact SMD package ( 2 x4 pins)

Contextual Info: Product Specification Philips Components Resistor Chip Size 0603 5% FEATURES Reduced size of final equipment 9C06031A.J 2322 7 0 2 QUICK REFERENCE DATA Resistance Range 1£2 to 6.8 M£2; E24 Series and Jumper (0 £2) Resistance Tolerance ±5% Temperature Coefficient

Contextual Info: CAT93C76 8-Kb Microwire Serial EEPROM Description The CAT93C76 is an 8−Kb Serial EEPROM memory device which is configured as either registers of 16 bits ORG pin at VCC or Not Connected or 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the DI (or DO) pin. The CAT93C76 is

sl6se

Abstract: SL6B8 M78XX M72 7 segment m72 seven segment Micro Sensor clts sl5lg ptc m71 seven segment m74 intel ia 32
Contextual Info: R Mobile Intel Celeron® Processor 0.18µ and 0.13µ Specification Update November 2006 Version 054 Notice: The mobile Intel® Celeron® processor (0.18µ and 0.13µ) may contain design defects or errors known as errata which may cause the product to deviate from published

25x40bvs

Abstract: 25x40bvsig winbond 25x40bvnig w25q10 25X40B w25x40b 25x20bvn W25X20B 25x10bv W25Q10B
Contextual Info: W25X10BV/20BV/40BV 1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI The W25Q10B-20B-40BV is recommended for all new designs. The W25X10B20B-40BV is available for existing designs that require "25X" device ID for firmware compatibility.

25X40BL

Abstract: 25x40BLIG 25x20blnig Winbond 25X20Blig W25X20BL W25X20B 25x20bl W25X20BLSNIG W25X40B 25X40Bls
Contextual Info: W25X10BL/20BL/40BL 1M-BIT, 2M-BIT AND 4M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI - 1- Publication Release Date: October 14, 2009 Preliminary - Revision A W25X10BL/20BL/40BL Table of Contents 1. GENERAL DESCRIPTION. 4

Contextual Info: W25X10CL 2.5 / 3 / 3.3 V 1M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI -1- Publication Release Date: February 17, 2014 Revision G W25X10CL Table of Contents 1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION . 4

W25X20CL

Abstract: 25x20clv 25X20CLNIG ID15-ID8
Contextual Info: W25X20CL 2.5 / 3 / 3.3 V 2M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI -1- Publication Release Date: August 6, 2012 Revision A W25X20CL Table of Contents 1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION . 4

25x40cl

Abstract: 25X40CLNIG sample code read and write flash memory w25x40c 2x3mm W25X40CL 00FF0 0300F ID63 134KB
Contextual Info: W25X40CL 2.5/3/3.3 V 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI -1- Publication Release Date: March 06, 2012 Revision A W25X40CL Table of Contents 1. 2. 3. 4. 5. 6. GENERAL DESCRIPTION .4

W25X20CL

Abstract: 3012h W25X20C W25X20CLUXIG 25x20clv 25X20CLNIG
Contextual Info: W25X20CL 2.5 / 3 / 3.3 V 2M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI -1- Publication Release Date: November 28, 2012 Revision D W25X20CL Table of Contents 1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION . 4

W25X10CL

Abstract: SOIC 8 MARKING CODE D8H USON-8 25X10CL
Contextual Info: W25X10CL 2.5 / 3 / 3.3 V 1M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI -1- Publication Release Date: November 28, 2012 Revision E W25X10CL Table of Contents 1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION . 4

W25X10CL

Abstract: SPIflash W25X10CLUXIG
Contextual Info: W25X10CL 2.5 / 3 / 3.3 V 1M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI -1- Publication Release Date: August 6, 2012 Revision A W25X10CL Table of Contents 1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION . 4

SOIC 8 MARKING CODE D8H

Abstract: L3 MARKING CODE 8PIN W25X05CL
Contextual Info: W25X05CL 2.5 / 3 / 3.3 V 512K-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI -1- Publication Release Date: November 28, 2012 Revision E W25X05CL Table of Contents 1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION . 4

Contextual Info: W25X20CL 2.5 / 3 / 3.3 V 2M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI -1- Publication Release Date: October 28, 2013 Revision E W25X20CL Table of Contents 1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION . 4