M7 DIODE POWER Search Results

Contextual Info: T O SH IB A TLP747GF TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-THYRISTOR T I P 7m f ml m7 f i F • ■ ■ OFFICE MACHINE SWITCHING POWER SUPPLY The TOSHIBA TLP747GF consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead

Contextual Info: TOSHIBA TLP741G TO SHIBA PHOTOCOUPLER GaAs IRED & PHOTO-THYRISTOR T• I P m m7 J ■ 1■ f' wi OFFICE M AC H IN E HOUSEHOLD USE EQUIPM ENT SOLID STATE RELAY SW ITCHING POWER SUPPLY The TOSHIBA TLP741G consists of a photo-thyristor optically coupled to a gallium arsenide infrared em itting diode in a six lead

E88991

Abstract: SCL-1 DPDT SCL-1-DPDT scl-1-dpdt-s SCL-DPDT SONG CHUAN SCL-1 DPNO diode dc m7 vde 0436 1386 DIODE
Contextual Info: SONG CHUAN SCL Features ϭ 10A general purpose Power Relay. ϭ Contact rating up to 12A 250VAC DPNO . ϭ Epoxy sealed type and flux free. ϭ Quick connect terminal or PCB terminal available. ϭ Special version of larger contact gap 1.9mm. (IEC 255/VDE 0436) (DPNO Only)

transistor KPS 92

Abstract: TOP255 TOP252 TOP262 TOP256YN top256 TOP254PN TOP252-262 top 258 TOP258
Contextual Info: TOP252-262 TOPSwitch-HX Family ® Enhanced EcoSmart , Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range Product Highlights Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads

TOP256

Abstract: top*254 en top258 top253 top261 TOP257 TOP261YN TOP259-261YN TOP256YN TOP254PN
Contextual Info: TOP252-261 TOPSwitch-HX Family ® Enhanced EcoSmart , Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range Product Highlights Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads

A 3120V

Abstract: 205-3CC-DM-1 m7 diode 205-2CC-DM-3 205-3CC-DM-3 dm 0256 3120v led diode song chuan e419
Contextual Info: 205 SONG CHUAN Features □ DPDT ; TPDT General Purpose Power Relay. □ DC / AC Coil. □ Single or Twin contacts with / without gold plated. □ With position indicator, manual override and override level. □ Optional LED and protection diode. □ Comply with RoHS-Directive 2002/95/EC.

m7 diode

Abstract: diode M7 skiip gb 120 pcb board of miniskiip 2 semikron skiip 09 125 semikron skiip 09 SEMIKRON SKIIP 72 GB 12 igbt semikron SEMIKRON BOARD miniskiip 72
Contextual Info: SKiiP 71 GB 06 Absolute Maximum Ratings Symbol VCES VGES IC ICM Conditions 1 Values 600 ± 20 100 / 70 200 / 140 Units V V A A 130 / 88 260 / 186 2500 – 40 . . . + 150 – 40 . . . + 125 A A V~ °C °C Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C; tp = 1 ms

semikron thyristor

Contextual Info: SKKT 42, SKKT 42B, SKKH 42 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter SEMIPACK 1 Thyristor / Diode Modules /0.1 /001 /%01 / ;66 7"66 7#66 7466 / 866 7$66 7566 7!66 .<<+ 5$=68

diode M7

Abstract: m7 diode SEMIKRON SKIIP 72 GB 12 m7 diode power semikron skiip 3 gb 120 skiip gb 120 semikron skiip 09 125 semikron skiip 09 skiip 72 gb 120 semikron 100 gb 06
Contextual Info: SKiiP 72 GB 12 Absolute Maximum Ratings Symbol VCES VGES IC ICM Conditions 1 Values 1200 ± 20 95 / 65 190 / 130 Units V V A A 80 / 53 160 / 106 2500 – 40 . . . + 150 – 40 . . . + 125 A A V~ °C °C Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C; tp = 1 ms

diode F8 23

Contextual Info: ZMY 1 . ZMY 200 1,3W 8 C + 7   >   Absolute Maximum Ratings Symbol Conditions Surface mount diode Zener silicon diodes Features                     !"#$ %  &  ' (     ( 

M7 DIODE POLARITY

Abstract: DIODE M7 marking M7 DIODE MARKING
Contextual Info: SGS-THOMSON IM O M iL iig ra fM O O S B Y W 9 9 P /P I/W HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET FEATURES • . . . . ■ SUITED FORSMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY

suncon 1000uf capacitor

Contextual Info: DEMO MANUAL DC2134A LTC4020EUHF High Power Buck-Boost Multi-Chemistry Battery Charger Description Demonstration circuit 2134A is a high power buck-boost multichemistry battery charger featuring the LTC 4020. The board will accept an input voltage between 15V and

D1471

Abstract: M7 zener A3K1
Contextual Info: DATA SHEET ZENER DIODE RD6.2Z ZENER DIODE 200 mW ESD PROTECTION 5 V Signal Line MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Type RD6.2Z is planar type zener diode possessing an allowable (Unit: mm) power dissipation of 200 mW. 2.8±0.2 0.4+0.1 −0.05 The purpose is ESD PROTECTION of 5 V Signal Line.

NP36N055HHE

Abstract: NP36N055IHE
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.

2SK3361

Abstract: d1431 Nec AC 160
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3361 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3361 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3361 Isolated TO-220 designed for high current switching application.

D1433

Abstract: 2SK3360
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3360 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3360 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3360 Isolated TO-220 designed for high current switching application.

2SK3225

Abstract: 2SK3225-Z A1827
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES PART NUMBER PACKAGE

2SK3204

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3204 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE • ORDERING INFORMATION DESCRIPTION The 2SK3204 is N-Channel MOS Field Effect Transistor designed for high current switching applications. • PART NUMBER PACKAGE

APEX PA19

Contextual Info: 7*%&0
108&3
01&3"5*0/"-
".1-*'*&34 PA19 • PA19A 551888"1&9.*$305&$)$0.



"1&9



 M I C R O T E C H N O L O G Y FEATURES • VERY FAST SLEW RATE — 900 V/µs • POWER MOS TECHNOLOGY — 4A peak rating • LOW INTERNAL LOSSES — 2V at 2A

fet to251

Abstract: 2SK3377 2SK3377-Z D1432
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3377 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES PART NUMBER PACKAGE

2SK3385-Z

Abstract: 2SK3385 US79
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES PART NUMBER PACKAGE

2SK3354

Abstract: 2SK3354-S 2SK3354-Z MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3354 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3354 TO-220AB 2SK3354-S TO-262 2SK3354-Z TO-220SMD

2SK3224

Abstract: 2SK3224-Z transistor k 790
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES PART NUMBER PACKAGE

2SK3435

Abstract: 2SK3435-S 2SK3435-Z MP-25 MP-25Z m7 diode sd
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3435 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3435 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3435 TO-220AB 2SK3435-S TO-262 2SK3435-Z