M6 SOT23 Search Results

fairchild marking codes sot-23

Abstract: marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component KST5088
Contextual Info: KST812M3/M4/M5/M6/M7 KST812M3/M4/M5/M6/M7 General Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter Value -50

BSS66

Abstract: SOT23 M7 BSS66R BSS67 100khz 5v transistor npn transistor m6 npn BSS67R medium power switching transistors DSA003680
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS BSS66 BSS67 ISSUE 2 – SEPTEMBER 1995 ✪ PARTMARKING DETAILS — BSS66 BSS67 BSS66R BSS67R - M6 M7 M8 M9 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60

1D-S marking

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

S9015

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: BSS66 BSS67 SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS PARTMARKING DETAILS BSS66 - M6 BSS67 - M7 BSS66R- M8 BSS67R - M9 ABSOLUTE MAXIMUM RATINGS VALUE UNIT V CBO 60 V V CEO 40 V V ebo !cm 6 V 200 mA Continuous Collector Current !c 100 mA Base Current

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

S9015 SOT-23

Abstract: m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

m6 marking transistor sot-23

Abstract: sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6
Contextual Info: S9015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to S9014 MARKING: M6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

BSS67

Contextual Info: BSS66 SOT23 NPN SILICON PLANAR M E D IU M POW ER SW ITCHING T R A N SIST O R S ISSUE 2 - SEPTEMBER 1995 Q PARTMARKING DETAILS — BSS66 BSS67 - RQQ«7 M6 M7 BSS66R- M8 BSS67R- M9 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE

BSR58

Contextual Info: BSR58 BSR58 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M6 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted

MARK M6

Abstract: BSR58
Contextual Info: BSR58 BSR58 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M6 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted

KST812M6 transistor

Abstract: KST812M6
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit -50 -40 -5 -100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: S9015 PNP 3 1 2 SOT-23 V CEO Value -45 -50 -5 -100 200 1.6 625 S9015=M6 -45 -0.1 -40 -100 -5.0 -100 E=-45Vdc, I E= 0 -50 -5.0 WEITRON http://www.weitron.com.tw O -0.1 u -0.1 u -0.1 u S9015 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued)

S9015LT1

Abstract: S9015 S9015M
Contextual Info: S9015LT1 PNP 3 1 2 SOT-23 V CEO Value -45 -50 -5 -100 200 1.6 625 S9015=M6 -45 -0.1 -40 -100 -5.0 -100 E=-45Vdc, I E= 0 -50 -5.0 WEITRON http://www.weitron.com.tw O -0.1 u -0.1 u -0.1 u S9015LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued)

Contextual Info: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

2SA812

Contextual Info: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

2SA812-M7

Abstract: 2SA812M5 2SA812 2SA812M6 2SA812-M4
Contextual Info: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

qqmz

Abstract: marking k501 tssop14 st automotive
Contextual Info: TS861, TS862, TS864 Rail-to-rail micropower BiCMOS comparators Datasheet − production data Features • SOT23-5 Ultra low current consumption 6 µA/comp. at VCC = 2.7 V ■ Rail-to-rail CMOS inputs ■ Push-pull outputs ■ Supply operation from 2.7 to 10 V

MMBA812M5

Abstract: marking M3 MMBA812M4 MMBA812M3 MMBA812M6
Contextual Info: 34 MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC DE | b 3 b 7 E S S 003Ô27S a CDIO D E S /O PTO 3 ^C SOT23 continued) 38275 D T - z *- /* MMBA812M3,4,5,6,7 DEVICENO. SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C j • Designed for general-purpose and audio-frequency amplifier

max14574

Abstract: MAX1786 MAX1788 MAX8899 DS1849 MAX16908 MAX4967 DS3610 max17018 max13487
Contextual Info: Monitor Reports by Product: 1. Find the product of interest in the table below. Note the process and/or package for that product. 2. Use the "Back" button to return to the home page. 3. Select the process in the "Process Reliability" for the product of interest.

OPTOCOUPLER 4-PIN

Abstract: 1N4148 sod123 SMD7343 zener 8w PWM DRIVE control 100V 20A SMD-7343 1n4148 any 1N4148 SOD323 pwm lm2904 HV9608DB1
Contextual Info: HV9608DB1 3.3V/20A DC/DC Converter for Telecom Systems Introduction The Supertex HV9608 PWM controller contains all the features and flexibility needed to implement current-mode control for DC/DC converters, which is demonstrated in a high efficiency, open-frame, low,

m6 marking transistor sot-23

Abstract: transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812
Contextual Info: 2SA812 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

m6 marking transistor sot-23

Abstract: 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER