M54HC20 Search Results

74LS20 ic

Abstract: M54HC20 M54HC20F1R M74HC20 M74HC20B1R M74HC20C1R M74HC20M1R 74Ls20 truth table
Contextual Info: M54HC20 M74HC20 DUAL 4-INPUT NAND GATE . . . . . . . . HIGH SPEED tPD = 8 ns TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE

Contextual Info: M54HC20 M74HC20 SGS-THOMSON G l DUAL 4-INPUT NAND GATE HIGH SPEED tPD = 10 ns TYP. at VCc = 5V LOW POWER DISSIPATION ICC = 1 *A (MAX.) at T a = 2 5 °C HIGH NOISE IM M U N ITY V NIH = V NIL = 2 8 % V q c (MIN.) O U TPU T DRIVE CAPABILITY 10 LSTTL LOADS

74LS20 ic

Abstract: M74HC20 M74HC20B1R M74HC20C1R M74HC20M1R M54HC20 M54HC20F1R
Contextual Info: M54HC20 M74HC20 DUAL 4-INPUT NAND GATE . . . . . . . . HIGH SPEED tPD = 8 ns TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE

Contextual Info: SCS-THOMSON lÄ g«LiM (s «S M54HC20 M74HC20 DUAL 4-INPUT NAND GATE • HIGH SPEED tpo = 8 ns (TYP.) AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 1 nA (MAX.) AT Ta = 25 *C ■ HIGHNOISE IMMUNITY V nih = V n il = 28 % V c c (MIN.) ■ OUTPUT DRIVE CAPABILITY

940900701F

Abstract: 54HC4053 54HC273 940501301F 920305001F 940104801F 920110601F 54HC08 920112001F 940806401F
Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

M54HC132

Abstract: M54HC595KG M54HC138KG 920112001F
Contextual Info: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage • Low power DC dissipation: 1 µA max. at 25 °C • High speed tPD = 8 ns typ. at 25 °C • Symmetrical outputs characteristics

54HC4053

Abstract: 940104801F 940900701F 54HC08 940806401F M54HC245K 54HC273 920110501F 940104701F 920110601F
Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed TPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

940900703F

Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

Contextual Info: SbE J> *7 # • 7t12clE37 003^770 177 « S G T H S C S -T H O M S O N M 54H C 20 [j ÆO [^ ô)tlLi©TO^O©i_ M 7 4 H C 2 0 S 6 S -T H O M S O N DUAL 4-INPUT NAND GATE ■ HIGH SPEED tpD = 10 ns (TYP.) at VCc = 5V ■ LOW POWER DISSIPATION

940806401F

Contextual Info: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage  Low power DC dissipation: 1 µA max. at 25 °C  High speed tPD = 8 ns typ. at 25 °C  Symmetrical outputs characteristics