M5362 Search Results

KMM536256C-8

Contextual Info: SAMSUNG ELECTRONICS INC b?E » • 7^4145 KM M536256C/CG QQ1504Q 12 4 I SUGK DRAM MODULES 2 5 6 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance ranae: • • • • • • • tnAC •cac M536256C-7 70ns 20ns 130ns M536256C-8

Contextual Info: M53620800DW0/DB0 M53620810DW0/DB0 DRAM MODULE M53620800DW0/DB0 & M53620810DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5362080(1)0D

4Mx4 dram simm

Contextual Info: M53620800CW0/CB0 M53620810CW0/CB0 DRAM MODULE M53620800CW0/CB0 & M53620810CW0/CB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5362080(1)0C

Contextual Info: Preliminary M53620800DW0/DB0 M53620810DW0/DB0 DRAM MODULE M53620800DW0/DB0 & M53620810DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0D is a 8Mx36bits Dynamic RAM

Contextual Info: Preliminary M53620400DW0/DB0 M53620410DW0/DB0 DRAM MODULE M53620400DW0/DB0 & M53620410DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362040 1 0D is a 4Mx36bits Dynamic RAM

Contextual Info: DRAM MODULE M53620405BY0/BT0-C 4Byte 4Mx36 SIMM PDpin 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53620405BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.

Contextual Info: DRAM MODULE M53620412DW0/DB0 M53620412DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412D is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412D

D01471

Contextual Info: SAMSUNG ELECTRONICS INC b 4 E ]> • TTbMlME DDIMTOT 154 KM M536256W/WG SflfiK DRAM MODULES 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The S am sung M536256W is a 256K b it x 36 Dynam­ ic RAM high d e n sity m em ory m odule. The Sam sung

Contextual Info: DRAM MODULE M53620405CY0/CT0-C 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53620405CY0/CT0-C DRAM MODULE

Contextual Info: KM M536256C/CG DRAM MODULES 2 5 6 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance ranae: The S am sung M536256C is a 262,144 b it x 36 Dynamic RAM high density m em ory module. The Sam­ sung M536256C c o n s is t o f e ig h t CMOS 2 5 6 K x 4

c60 equivalent

Abstract: dram 4mx4 kmm5364
Contextual Info: DRAM MODULE M53620412CW0/CB0 M53620412CW0/CB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412C

Contextual Info: DRAM MODULE M53620805BY0/BT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53620805BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

KM416C1200AJ

Contextual Info: DRAM MODULE KM M5362203AW/AWG KM M5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN ERA L D ESC RIPTIO N FEATURES The Sam sung M5362203AW is a 2M bit x 36 Dynam ic RAM high density m em ory module. The Samsung KM M 5362203AW consists of four CMOS

Contextual Info: DRAM MODULE M53620805CY0/CT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53620805CY0/CT0-C DRAM MODULE

Contextual Info: M53620400DW0/DB0 M53620410DW0/DB0 DRAM MODULE M53620400DW0/DB0 & M53620410DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362040 1 0D is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M5362040(1)0D

Contextual Info: DRAM MODULE M53620812CW0/CB0 M53620812CW0/CB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53620812C

Contextual Info: M53620400CW0/CB0 M53620410CW0/CB0 DRAM MODULE M53620400CW0/CB0 & M53620410CW0/CB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362040 1 0C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M5362040(1)0C

Contextual Info: DRAM MODULE M53620812DW0/DB0 M53620812DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620812D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53620812D

pico electronics transformers h5460

Abstract: M-531 M-5359 J5600 E5140 M-5355 H-5415 J-5650 e5200 M5300
Contextual Info: P IC O ’S Ultra-Miniature PULSE Transformers .n i!* # » no "/« MAX ” OIA MSERIES rB fO _ . 2 5 0 t 010 025 Plug-In 3 5 MAX DIA 14.9 MAX OlA) 16 .3 5 t r* 7/ M MAX 5.55 M AX)£ 035* (0 91 00 i.* 5 .2 5,4 «6.351 i '/ j iV * (38.1 + 6 .3 5 ) , I.so i t s

tb41

Contextual Info: DRAM MODULE M5362203AW/AWG M5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung M5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The

Contextual Info: SAMSUNG ELECTRONICS INC b 4E D • 7T b 4142 G a m b a s M5362000A1/A1G 41b ■ SMGK DRAM MODULES 2M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M5362000A1 is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung

coaxial cable awm 1354

Abstract: AWM 2498 M39024/11
Contextual Info: Manhattan Electrical Cable Alpha Wire | www.alphawire.com | 1-800-52 ALPHA Specifications subject to change. For complete specifications and availability, visit www.alphawire.com. 141 Manhattan™ Electrical Cable Signal transmission made reliable A lpha Wire’s Manhattan

KMM5362000

Contextual Info: M5362000B1/B1G DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung M5362000B1 is a 2M bits x 36 Dynamic RAM high density memory module. The Samsung M5362000B1 consist of sixteen CMOS 1 Mx 4 bit DRAMs in 20-pin SOJ package and eight CMOS 1M x 1

Contextual Info: DRAM MODULE M5362203C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS DRAM MODULE M5362203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from M5362203CW /CWG to M5362203C2W /C2W G caused by PCB revision .