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M52S16161A Datasheets (4)

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Elite Semiconductor Memory Technology

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
M52S16161A		Elite Semiconductor Memory Technology	512K x 16-Bit x 2Banks Synchronous DRAM	Original	PDF	769.04KB	29
M52S16161A-10TG		Elite Semiconductor Memory Technology	512K x 16-Bit x 2Banks Synchronous DRAM	Original	PDF	769.04KB	29
M52S16161A-8BG		Elite Semiconductor Memory Technology	512K x 16-Bit x 2Banks Synchronous DRAM	Original	PDF	769.04KB	29
M52S16161A-8TG		Elite Semiconductor Memory Technology	512K x 16-Bit x 2Banks Synchronous DRAM	Original	PDF	769.03KB	29

M52S16161A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
M52S16161A Abstract: M52S16161A-10TG M52S16161A-8BG M52S16161A-8TG Contextual Info: ESMT M52S16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page)	Original	M52S16161A 16Bit M52S16161A M52S16161A-10TG M52S16161A-8BG M52S16161A-8TG	PDF
Contextual Info: M52S16161A 2J Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 ) Burst Length (1, 2, 4, 8 & full page)	Original	M52S16161A 16Bit M52S16161A	PDF
Contextual Info: ESMT M52S16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page)	Original	M52S16161A 16Bit M52S16161A	PDF
Contextual Info: ESMT M52S16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page)	Original	M52S16161A 16Bit M52S16161A	PDF
Mobile SDRAM Contextual Info: ESMT M52S16161A 2J Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 )	Original	M52S16161A 16Bit M52S16161A Mobile SDRAM	PDF
0.65mm pitch BGA Abstract: M52S16161A M52S16161A-10TG M52S16161A-8BG M52S16161A-8TG EsmtM52S16161A Contextual Info: ESMT M52S16161A Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3	Original	M52S16161A 16Bit M52S16161A 0.65mm pitch BGA M52S16161A-10TG M52S16161A-8BG M52S16161A-8TG EsmtM52S16161A	PDF
Contextual Info: ESMT M52S16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page)	Original	M52S16161A 16Bit M52S16161A	PDF
M13S2561616A-5TG Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII Contextual Info: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now	Original	256Kb 40/44L-TSOPII M11B416256A-25JP M11B416256A-35TG M11L416256SA-35JP M11L416256SA-35TG 40L-SOJ 44-40L-TSOPII 128Mb M13S2561616A-5TG 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII	PDF