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M52D32162A Datasheets (4)

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Elite Semiconductor Memory Technology

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
M52D32162A		Elite Semiconductor Memory Technology	1M x 16-Bit x 2Banks Synchronous DRAM	Original	PDF	781.65KB	30
M52D32162A-10BG		Elite Semiconductor Memory Technology	1M x 16-Bit x 2Banks Synchronous DRAM	Original	PDF	781.64KB	30
M52D32162A-10TG		Elite Semiconductor Memory Technology	1M x 16-Bit x 2Banks Synchronous DRAM	Original	PDF	781.65KB	30
M52D32162A-7.5TG		Elite Semiconductor Memory Technology	1M x 16-Bit x 2Banks Synchronous DRAM	Original	PDF	781.64KB	30

M52D32162A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MAKING A10 BGA Abstract: M52D32162A Contextual Info: ESMT M52D32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D32162A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 16 bits, fabricated with high performance CMOS	Original	M52D32162A 16Bit M52D32162A MAKING A10 BGA	PDF
CKE 2009 Contextual Info: ESMT M52D32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D32162A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 16 bits, fabricated with high performance CMOS	Original	M52D32162A 16Bit M52D32162A CKE 2009	PDF
Contextual Info: ESMT M52D32162A Revision History : Revision 1.0 Aug.16, 2006 - Original Revision 1.1 (Aug. 31,2006) -Modify VDD; VDDQ; tSAC; ICC1; ICC2PS; ICC6 spec Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2006 Revision : 1.1 1/30 ESMT M52D32162A	Original	M52D32162A 16Bit	PDF
M52D32162A Contextual Info: ESMT M52D32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3	Original	M52D32162A 16Bit M52D32162A	PDF
M52D32162A Contextual Info: ESMT M52D32162A Revision History : Revision 1.0 Aug.16, 2006 - Original Revision 1.1 (Aug. 31,2006) -Modify VDD; VDDQ; tSAC; ICC1; ICC2PS; ICC6 spec Revision 1.2 (Apr. 24,2007) - Delete BGA ball name of packing dimensions Revision 1.3 (Apr. 27,2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA)	Original	M52D32162A 16Bit M52D32162A	PDF
Mobile SDRAM Abstract: M52D32162A Contextual Info: ESMT M52D32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3	Original	M52D32162A 16Bit M52D32162A Mobile SDRAM	PDF
Contextual Info: M52D32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3 Burst Length (1, 2, 4, 8 & full page)	Original	M52D32162A 16Bit M52D32162A	PDF
M13S2561616A-5TG Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII Contextual Info: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now	Original	256Kb 40/44L-TSOPII M11B416256A-25JP M11B416256A-35TG M11L416256SA-35JP M11L416256SA-35TG 40L-SOJ 44-40L-TSOPII 128Mb M13S2561616A-5TG 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII	PDF