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m52757fp datasheet (1)

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M52757FP M52757FP ECAD Model Mitsubishi WIDE BAND ANALOG SWITCH Original PDF

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2008 - ra01l8693ma

Abstract: RF MOSFET MODULE ra MITSUBISHI marking example
Text: Nov. 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING , . RA01L8693MA MITSUBISHI ELECTRIC 2/13 th 21 Nov. 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC , 21 Nov. 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING , otherwise specified) RA01L8693MA MITSUBISHI ELECTRIC 4/13 th 21 Nov. 2008 MITSUBISHI RF , ) RA01L8693MA MITSUBISHI ELECTRIC 5/13 th 21 Nov. 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC


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PDF RA01L8693MA 865-928MHz RA01L8693MA RF MOSFET MODULE ra MITSUBISHI marking example
2008 - RD07MUS2B

Abstract: RD07MUS2
Text: RD07MUS2B MITSUBISHI ELECTRIC 1/12 22 Oct 2008 (0.22) 3 (0.25) APPLICATION SYMBOL VDSS , 20 MITSUBISHI ELECTRIC 2/12 22 Oct 2008 MITSUBISHI RF POWER MOS FET RD07MUS2B , 780 800 820 840 860 880 900 920 940 960 f (MHz) MITSUBISHI ELECTRIC 3/12 22 Oct 2008 , Vdd(V) 8 9 10 22 Oct 2008 MITSUBISHI RF POWER MOS FET RD07MUS2B ELECTROSTATIC , Vdd(V) 8 9 10 MITSUBISHI ELECTRIC 5/12 22 Oct 2008 MITSUBISHI RF POWER MOS FET


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PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) RD07MUS2
2008 - FU-456RDF

Abstract: ML9XX46 laser diode DVD 300mw FU-357RPA 650nm laser diode 200mw ML7XX46 APD 10gbps 1550nm Laser Diode with butterfly pin package sirio FU-68SDF-V3M series
Text: therein. H-CT606-J KI-0807 Printed in Japan (MDOC) © 2008 MITSUBISHI ELECTRIC CORPORATION New publication effective Jul. 2008 . Specifications subject to change without notice. Mitsubishi , MITSUBISHI OPTICAL DEVICE Mitsubishi optical device products support our IT era Trunk Line City A , higher output and shorter wavelengths in laser diodes. Mitsubishi Electric was quickest off the mark in , 1992 1994 1996 Year 3 1998 2000 2002 2004 2006 2008 Laser Diode for


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PDF 350mW 650nm 1600nm H-CT606-J KI-0807 FU-456RDF ML9XX46 laser diode DVD 300mw FU-357RPA 650nm laser diode 200mw ML7XX46 APD 10gbps 1550nm Laser Diode with butterfly pin package sirio FU-68SDF-V3M series
2008 - MAR 703 MOSFET TRANSISTOR

Abstract: RD15HVF1 RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346
Text: ELECTRIC 1/9 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE , 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE , 10 Vds(V) 15 20 0 MITSUBISHI ELECTRIC 3/9 5 10 Vds(V) 15 20 7 Mar 2008 , 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING , ELECTRIC 5/9 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1


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PDF RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 MAR 703 MOSFET TRANSISTOR RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346
2008 - GD-30

Abstract: No abstract text available
Text: Apr./ 2008 MITSUBISHI SEMICONDUTOR MGF4934CM SUPER LOW NOISE InGaAs HEMT (4pin , NFmin. MITSUBISHI (1/5) Apr./ 2008 MITSUBISHI SEMICONDUTOR MGF4934CM SUPER LOW , ./ 2008 MITSUBISHI SEMICONDUTOR MGF4934CM SUPER LOW NOISE InGaAs HEMT (4pin flat lead , ./ 2008 MITSUBISHI SEMICONDUTOR MGF4934CM SUPER LOW NOISE InGaAs HEMT (4pin flat lead , ) MITSUBISHI (4/5) Apr./ 2008 MITSUBISHI SEMICONDUTOR MGF4934CM SUPER LOW NOISE InGaAs


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PDF MGF4934CM MGF4934CM 12GHz GD-30
2008 - transistor

Abstract: QM30TB-H technical data mitsubishi KE924503 ke92 FILE TRANSISTOR
Text: KE924503 http://www.ineltron.com/ mitsubishi-data /transistor/qm30tb-h.htm 7/28/ 2008 Mitsubishi , ://www.ineltron.com/ mitsubishi-data /transistor/qm30tb-h.htm 7/28/ 2008 Mitsubishi QM30TB-H datasheet technical data Page 4 of 6 http://www.ineltron.com/ mitsubishi-data /transistor/qm30tb-h.htm 7/28/ 2008 Mitsubishi QM30TB-H datasheet technical data Page 5 of 6 http://www.ineltron.com/ mitsubishi-data , ://www.ineltron.com/ mitsubishi-data /transistor/qm30tb-h.htm 7/28/ 2008 Mitsubishi


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PDF QM30TB-H QM30TB-H KE924503 com/mitsubishi-data/transistor/qm30tb-h transistor technical data mitsubishi KE924503 ke92 FILE TRANSISTOR
2008 - hemt

Abstract: GD-30 InGaAs HEMT mitsubishi
Text: May/ 2008 MITSUBISHI SEMICONDUTOR MGF4935AM SUPER LOW NOISE InGaAs HEMT (4pin , -1.5 V May/ 2008 MITSUBISHI SEMICONDUTOR MGF4935AM SUPER LOW NOISE InGaAs , : mm (0.85) Bottom Gate Source Drain (GD-30) MITSUBISHI (2/6) May/ 2008 , ) MITSUBISHI (3/6) 0.0 May/ 2008 MITSUBISHI SEMICONDUTOR MGF4935AM SUPER LOW NOISE , ) MITSUBISHI (4/6) May/ 2008 MITSUBISHI SEMICONDUTOR MGF4935AM SUPER LOW NOISE InGaAs


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PDF May/2008 MGF4935AM MGF4935AM 12GHz hemt GD-30 InGaAs HEMT mitsubishi
2008 - GD-30

Abstract: InGaAs HEMT mitsubishi
Text: May/ 2008 MITSUBISHI SEMICONDUTOR MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT (4pin , NFmin. MITSUBISHI (1/6) May/ 2008 MITSUBISHI SEMICONDUTOR MGF4934AM/BM SUPER , / 2008 MITSUBISHI SEMICONDUTOR MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT (4pin flat lead , Current, ID (mA) MITSUBISHI (3/6) 0.0 May/ 2008 MITSUBISHI SEMICONDUTOR 2008 MITSUBISHI SEMICONDUTOR MGF4934AM/BM SUPER


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PDF May/2008 MGF4934AM/BM MGF4934BM 12GHz GD-30 InGaAs HEMT mitsubishi
2008 - 400M

Abstract: 430M 470M RA30H4047M1
Text: modules/tray RA30H4047M1 MITSUBISHI ELECTRIC 1/9 rd 3 Mar 2008 MITSUBISHI RF POWER MODULE , 3 Mar 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING , INP UT P OW E R P in (dB m ) MITSUBISHI ELECTRIC 3/9 rd 3 Mar 2008 MITSUBISHI RF POWER , V G G (V ) MITSUBISHI ELECTRIC 4/9 rd 3 Mar 2008 MITSUBISHI RF POWER MODULE , ) RA30H4047M1 MITSUBISHI ELECTRIC 5/9 rd 3 Mar 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC


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PDF RA30H4047M1 400-470MHz RA30H4047M1 30-watt 470-MHz 400M 430M 470M
2008 - SWT-9

Abstract: ic 3845 pin diagram 36e 2527 diagram TA 306 8 pin ic POUT25
Text: . MITSUBISHI ELECTRIC CORP. (1/8) July- 2008 MITSUBISHI SEMICONDUCTOR MGFS36E3436A 3.4-3.6GHz HBT , /8) July- 2008 MITSUBISHI SEMICONDUCTOR MGFS36E3436A 3.4-3.6GHz HBT HYBRID IC , 3.8 4.0 Frequency (GHz) MITSUBISHI ELECTRIC CORP. (3/8) July- 2008 MITSUBISHI , ) July- 2008 MITSUBISHI SEMICONDUCTOR MGFS36E3436A 3.4-3.6GHz HBT HYBRID IC Specifications are , CORP. (5/8) July- 2008 MITSUBISHI SEMICONDUCTOR MGFS36E3436A 3.4-3.6GHz HBT HYBRID IC


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PDF MGFS36E3436A MGFS36E3436A 25dBm 27dBm IEEE802 16e-2005 350degC. July-2008 SWT-9 ic 3845 pin diagram 36e 2527 diagram TA 306 8 pin ic POUT25
2008 - RA45H7687M1

Abstract: RA45H7687M1-101 45WATT DD 128 D transistor
Text: Feb 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING , change without notice. RA45H7687M1 MITSUBISHI ELECTRIC 2/9 th 29 Feb 2008 MITSUBISHI RF , 6 8 10 12 DRAIN VOLTAGE V D D (V) 14 16 th 29 Feb 2008 MITSUBISHI RF POWER , 4 GA TE V OLTA GE V GG2 (V ) 5 th 29 Feb 2008 MITSUBISHI RF POWER MODULE , (Pout) 5 RF Ground (Case) RA45H7687M1 MITSUBISHI ELECTRIC 5/9 th 29 Feb 2008


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PDF RA45H7687M1 764-870MHz RA45H7687M1 45-watt 870-MHz RA45H7687M1-101 45WATT DD 128 D transistor
2008 - RA60H4047M1-101

Abstract: RA60H4047M1 lt 7245 lt 7210 400M 430M 470M amplifier 60watt module
Text: modules/tray RA60H4047M1 MITSUBISHI ELECTRIC 1/9 rd 3 Mar 2008 MITSUBISHI RF POWER MODULE , MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS , , conditions, ratings, and limits are subject to change without notice. RA60H4047M1 MITSUBISHI ELECTRIC 2/9 rd 3 Mar2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE , OUTPUT POWER Pout (dBm) rd 0 20 INP UT P OW E R P in (dB m ) MITSUBISHI ELECTRIC 3/9 rd


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PDF RA60H4047M1 400-470MHz RA60H4047M1 60-watt 470-MHz Mar2008 RA60H4047M1-101 lt 7245 lt 7210 400M 430M 470M amplifier 60watt module
2008 - lt 7210

Abstract: 470M RA30H4552M1 RA30H4552M1-101
Text: modules/tray RA30H4552M1 MITSUBISHI ELECTRIC 1/9 rd 3 Mar 2008 MITSUBISHI RF POWER MODULE , 3 Mar 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING , ) MITSUBISHI ELECTRIC 3/9 rd 3 Mar 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE , 3 Mar 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING , 3 Mar 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING


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PDF RA30H4552M1 450-520MHz RA30H4552M1 30-watt 520-MHz lt 7210 470M RA30H4552M1-101
2008 - MAR 618 transistor

Abstract: MAR 737 transistor d 1557 RD06HHF1 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231
Text: solder alloys containing more than85% lead.) RD06HHF1 MITSUBISHI ELECTRIC 1/8 7 Mar 2008 , change. RD06HHF1 MITSUBISHI ELECTRIC 2/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET , 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE , ELECTRIC 4/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 , Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE


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PDF RD06HHF1 30MHz 30MHz RD06HHF1 RD06HHF1-th MAR 618 transistor MAR 737 transistor d 1557 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231
2008 - MGFS36E2527

Abstract: No abstract text available
Text: malfunction or mishap. MITSUBISHI ELECTRIC CORP. (1/7) January- 2008 MITSUBISHI SEMICONDUCTOR , MITSUBISHI ELECTRIC CORP. (2/7) January- 2008 MITSUBISHI SEMICONDUCTOR MGFS36E2527 2.5-2.7GHz HBT , . (3/7) January- 2008 MITSUBISHI SEMICONDUCTOR MGFS36E2527 2.5-2.7GHz HBT HYBRID IC , Temperature (degC) 90 MITSUBISHI ELECTRIC CORP. (4/7) January- 2008 MITSUBISHI SEMICONDUCTOR , ELECTRIC CORP. (5/7) January- 2008 MITSUBISHI SEMICONDUCTOR MGFS36E2527 2.5-2.7GHz HBT HYBRID IC


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PDF MGFS36E2527 MGFS36E2527 27dBm 50ohms IEEE802 16e-2005 350degC. January-2008
2008 - lt 7245

Abstract: lt 7210 440M 470M RA60H4452M1 RA60H4452M1-101 POUT70
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS , modules/tray RA60H4452M1 MITSUBISHI ELECTRIC 1/9 rd 3 Mar2008 MITSUBISHI RF POWER MODULE , , conditions, ratings, and limits are subject to change without notice. RA60H4452M1 MITSUBISHI ELECTRIC 2/9 rd 3 Mar2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE , -30 90 OUTPUT POWER Pout (dBm) rd MITSUBISHI ELECTRIC 3/9 rd 3 Mar2008


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PDF RA60H4452M1 440-520MHz RA60H4452M1 60-watt 520-MHz Mar2008 lt 7245 lt 7210 440M 470M RA60H4452M1-101 POUT70
2008 - MAR 618 transistor

Abstract: MAR 737 RD06HVF1 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET
Text: solder alloys containing more than85% lead.) RD06HVF1 MITSUBISHI ELECTRIC 1/8 7 Mar 2008 , conditions are subject to change. RD06HVF1 MITSUBISHI ELECTRIC 2/8 7 Mar 2008 MITSUBISHI RF , MITSUBISHI ELECTRIC 3/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE , 3 4 5 Vgs(V) 6 7 8 9 MITSUBISHI ELECTRIC 4/8 7 Mar 2008 MITSUBISHI RF , ,D1.6mm P=1 silver plateted copper wire RD06HVF1 MITSUBISHI ELECTRIC 5/8 7 Mar 2008


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PDF RD06HVF1 175MHz 175MHz RD06HVF1 RD06HVFth MAR 618 transistor MAR 737 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET
2008 - RD16HHF1

Abstract: RD16HHF1-101 RD 15 hf mitsubishi transistor d 1564 MITSUBISHI RF POWER MOS FET MITSUBISHI RF POWER MOS FET rd 100 RD16HHF Transistor D 1747 MAR 637 rf transistor mar 8
Text: solder alloys containing more than85% lead.) RD16HHF1 MITSUBISHI ELECTRIC 1/8 7 Mar 2008 , , limits and conditions are subject to change. RD16HHF1 MITSUBISHI ELECTRIC 2/8 7 Mar 2008 , 20 30 Vds(V) MITSUBISHI ELECTRIC 3/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET , ) 12 2 0 2 14 MITSUBISHI ELECTRIC 4/8 4 6 Vgs(V) 8 10 7 Mar 2008 , =1.6mm / RD16HHF1 MITSUBISHI ELECTRIC 5/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE


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PDF RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-1th RD16HHF1-101 RD 15 hf mitsubishi transistor d 1564 MITSUBISHI RF POWER MOS FET MITSUBISHI RF POWER MOS FET rd 100 RD16HHF Transistor D 1747 MAR 637 rf transistor mar 8
2008 - RA60H1317M1A

Abstract: RA60H1317M1 RF MOSFET MODULE RF MODULE RA60H1317M1A rf transistor mar 8 MITSUBISHI marking example 174MHZ marking code transistor ND F1361 MAR 601 transistor
Text: -101 Antistatic tray, 10 modules/tray RA60H1317M1A MITSUBISHI ELECTRIC 1/9 13 Mar 2008 MITSUBISHI , subject to change without notice. RA60H1317M1A MITSUBISHI ELECTRIC 2/9 13 Mar 2008 , ELECTRIC 3/9 13 Mar 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE , DRAIN VOLTAGE VDD (V) RA60H1317M1A MITSUBISHI ELECTRIC 4/9 13 Mar 2008 MITSUBISHI RF POWER , 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS


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PDF RA60H1317M1A 136-174MHz RA60H1317M1A 60-watt 174-MHz RA60H1317M1 RF MOSFET MODULE RF MODULE RA60H1317M1A rf transistor mar 8 MITSUBISHI marking example 174MHZ marking code transistor ND F1361 MAR 601 transistor
2008 - diode lak

Abstract: No abstract text available
Text: MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 4-Feb.- 2008 HIGH VOLTAGE DIODE MODULE 1. 2. 3 , ) PAGE 1 / 11 MITSUBISHI ELECTRIC CORPORATION 6. Maximum Ratings Item Repetitive peak , VOLTAGE DIODE MODULE HVM-2012 (HV-SETSU) PAGE 2 / 11 MITSUBISHI ELECTRIC CORPORATION 8 , MODULE HVM-2012 (HV-SETSU) PAGE 3 / 11 MITSUBISHI ELECTRIC CORPORATION 11. Test , VOLTAGE DIODE MODULE HVM-2012 (HV-SETSU) PAGE 4 / 11 MITSUBISHI ELECTRIC CORPORATION 12


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PDF RM400DG-66S HVM-2012 31-Jan diode lak
2008 - RA07M4047MS

Abstract: RF MODULE 435Mhz
Text: RA07M4047MSA MITSUBISHI ELECTRIC 1/8 5 Feb 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC , limits are subject to change without notice. RA07M4047MSA MITSUBISHI ELECTRIC 2/8 5 Feb 2008 , ELECTRIC 3/8 4 5 6 7 8 DRAIN VOLTAGE VDD(V) 9 10 5 Feb 2008 MITSUBISHI RF , MITSUBISHI ELECTRIC 4/8 5 Feb 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE , MITSUBISHI ELECTRIC 5/8 5 Feb 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE


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PDF RA07M4047MSA 400-470MHz RA07M4047MSA 470-MHz RA07M4047MS RF MODULE 435Mhz
2008 - Not Available

Abstract: No abstract text available
Text: MITSUBISHI ELECTRIC CORPORATION I.Umezaki A K.Kurachi R E I.Umezaki M.Yamamoto V Nov.-18-2008 Nov , HVM-2001-A (HV-SETSU) PAGE 1 / 11 MITSUBISHI ELECTRIC CORPORATION 6. Maximum , -2001-A (HV-SETSU) PAGE 2 / 11 MITSUBISHI ELECTRIC CORPORATION 8. Thermal Characteristics Item , MITSUBISHI ELECTRIC CORPORATION 11. Test Circuit & Definition of Switching Characteristics LS1 = 500 nH , / 11 MITSUBISHI ELECTRIC CORPORATION 12. Performance curves 12-1 12-2 12-3 12-4 12-5


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PDF RM1800HE-34S HVM-2001-A
2008 - RF MOSFET MODULE

Abstract: No abstract text available
Text: RA07M4452MSA MITSUBISHI ELECTRIC 1/8 5 Feb 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC , limits are subject to change without notice. RA07M4452MSA MITSUBISHI ELECTRIC 2/8 5 Feb 2008 , 6 7 DRAIN VOLTAGE VDD(V) 8 9 10 5 Feb 2008 MITSUBISHI RF POWER MODULE , 2.0 3.0 GATE VOLTAGE VGG(V) 4.0 MITSUBISHI ELECTRIC 4/8 5 Feb 2008 MITSUBISHI RF , RA07M4452MSA OUTLINE DRAWING (mm) RA07M4452MSA MITSUBISHI ELECTRIC 5/8 5 Feb 2008 MITSUBISHI


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PDF RA07M4452MSA 440-520MHz RA07M4452MSA 520-MHz RF MOSFET MODULE
2008 - mitsubishi vcb

Abstract: MGFS36E2325 16e-2005
Text: malfunction or mishap. MITSUBISHI ELECTRIC CORP. (1/6) January- 2008 MITSUBISHI SEMICONDUCTOR , MITSUBISHI ELECTRIC CORP. (2/6) January- 2008 MITSUBISHI SEMICONDUCTOR MGFS36E2325 2.3-2.5GHz HBT , . (3/6) January- 2008 MITSUBISHI SEMICONDUCTOR MGFS36E2325 2.3-2.5GHz HBT HYBRID IC , Temperature (degC) 90 MITSUBISHI ELECTRIC CORP. (4/6) January- 2008 MITSUBISHI SEMICONDUCTOR , ) January- 2008 MITSUBISHI SEMICONDUCTOR MGFS36E2325 2.3-2.5GHz HBT HYBRID IC Specifications are


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PDF MGFS36E2325 MGFS36E2325 27dBm 50ohms IEEE802 16e-2005 350degC. January-2008 mitsubishi vcb 16e-2005
2008 - RM600DG-130S

Abstract: No abstract text available
Text: MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 4-Feb.- 2008 HIGH VOLTAGE DIODE MODULE 1 , MODULE HVM-2016 (HV-SETSU) PAGE 1 / 11 MITSUBISHI ELECTRIC CORPORATION 6. Maximum , HVM-2016 (HV-SETSU) PAGE 2 / 11 MITSUBISHI ELECTRIC CORPORATION 8. Thermal , -2016 (HV-SETSU) PAGE 3 / 11 MITSUBISHI ELECTRIC CORPORATION 11. Test Circuit & Definition of , HIGH VOLTAGE DIODE MODULE HVM-2016 (HV-SETSU) PAGE 4 / 11 MITSUBISHI ELECTRIC


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PDF RM600DG-130S HVM-2016 31-Jan RM600DG-130S
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