BAS716
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAS716 Low-leakage diode Product data sheet 2003 Nov 07 NXP Semiconductors Product data sheet Low-leakage diode BAS716 FEATURES PINNING • Plastic SMD package PIN ; • Low leakage current: typ. 0.2 nA • Switching time: typ. 0.6 µs
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BAP70-03
Abstract: DIODE SMD A9 diode MARKING A9
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP70-03 Silicon PIN diode Preliminary specification 2002 Jun 26 Philips Semiconductors Preliminary specification Silicon PIN diode BAP70-03 PINNING FEATURES • High voltage, current controlled RF resistor for attanuators
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DIODE smd marking 821
Abstract: BB145B CD 7640 BP317 smd marking 3263
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB145B Low-voltage variable capacitance diode Product specification 1999 Dec 15 Philips Semiconductors Product specification FEATURES DESCRIPTION • Ultra small plastic SMD package The BB145B is a planar technology
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109 DIODE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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diode SMD MARKING CODE K6 02
Abstract: diode SMD MARKING CODE K6 06 diode SMD MARKING CODE K6 07 diode SMD MARKING CODE K6 03
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP65-02 Silicon PIN diode Product specification Supersedes data of 2001 May 07 2001 May 11 Philips Semiconductors Product specification Silicon PIN diode BAP65-02 FEATURES PINNING • High voltage, current controlled
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smd diode code g3
Abstract: 1PS79SB31
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB31 Schottky barrier diode Product specification 2002 Jan 11 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB31 FEATURES • Very low forward voltage • Guard ring protected • Ultra small SMD package.
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BAP64-02
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP64-02 Silicon PIN diode Product specification Supersedes data of 1999 Sep 21 2000 Mar 23 Philips Semiconductors Product specification Silicon PIN diode BAP64-02 FEATURES PINNING • High voltage, current controlled
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB30 Schottky barrier diode Product specification 2001 Feb 20 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB30 FEATURES PINNING • Very low forward voltage PIN • Very low reverse current
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BB182B
Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB182B VHF variable capacitance diode Preliminary specification 1999 Sep 15 Philips Semiconductors Preliminary specification FEATURES DESCRIPTION • High linearity • Low series resistance. The BB182B is a planar technology
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BB141
Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB141 Low-voltage variable capacitance diode Preliminary specification 1999 May 12 Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode BB141 PINNING FEATURES • Excellent linearity
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st smd diode marking code
Abstract: BB181 marking code 4 SC-79
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB181 VHF variable capacitance diode Product specification 1998 Nov 26 Philips Semiconductors Product specification FEATURES DESCRIPTION • Excellent linearity The BB181 is a variable capacitance diode, fabricated in planar technology
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB182B VHF variable capacitance diode Product specification Supersedes data of 1999 Sep 15 1999 Nov 26 Philips Semiconductors Product specification FEATURES DESCRIPTION • High linearity • Low series resistance.
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PMEG2005EB
Abstract: code L5 marking code 4 SC-79
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG2005EB Low VF MEGA Schottky barrier diode Product specification 2003 Feb 20 Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode FEATURES PMEG2005EB PINNING • Forward current: 0.5 A
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BAS716
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAS716 Low-leakage diode Product data sheet 2003 Nov 07 NXP Semiconductors Product data sheet Low-leakage diode BAS716 FEATURES PINNING • Plastic SMD package PIN ; • Low leakage current: typ. 0.2 nA • Switching time: typ. 0.6 µs
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6 pin smd diode
Abstract: BAP64-02 t 522
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP64-02 Silicon PIN diode Preliminary specification 1999 Jun 16 Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-02 PINNING FEATURES • High voltage, current controlled PIN • RF resistor for RF attenuators and switches
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BP317
Abstract: BAP64-02 smd diode 6F MCC SMD DIODE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP64-02 Silicon PIN diode Objective specification Supersedes data of 1999 Apr 01 1999 May 10 Philips Semiconductors Objective specification Silicon PIN diode BAP64-02 PINNING FEATURES • High voltage, current controlled
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st smd diode marking code
Abstract: BB178 st smd diode marking code C smd diode marking dr
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB178 VHF variable capacitance diode Product specification 1997 Nov 13 Philips Semiconductors Product specification FEATURES DESCRIPTION • Excellent linearity • Very low series resistance. The BB178 is a planar technology
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diode 284 c10
Abstract: seoul MAM387
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BZX585 series Voltage regulator diodes Preliminary specification 2000 May 04 Philips Semiconductors Preliminary specification Voltage regulator diodes BZX585 series PINNING FEATURES • Total power dissipation: max. 300 mW
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BB182
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB182 VHF variable capacitance diode Product specification File under Discrete Semiconductors, SC01 1997 Nov 13 Philips Semiconductors Product specification FEATURES DESCRIPTION • High linearity • Low series resistance.
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BB179
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB179 UHF variable capacitance diode Product specification File under Discrete Semiconductors, SC01 1997 Nov 13 Philips Semiconductors Product specification FEATURES DESCRIPTION • Excellent linearity • Low series resistance.
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PMEG2005EB
Abstract: code L5 smd marking l5
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG2005EB Low VF MEGA Schottky barrier diode Product data sheet Supersedes data of 2003 Feb 20 2003 Apr 04 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode FEATURES PMEG2005EB PINNING • Forward current: 0.5 A
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MARKING C SOD523
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB179 UHF variable capacitance diode Product specification 1997 Nov 13 Philips Semiconductors Product specification FEATURES DESCRIPTION • Excellent linearity • Low series resistance. The BB179 is a planar technology
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MHC188
Abstract: MHC189 smd diode code b1 PMEG3002AEB marking code 4 SC-79 mhc-189
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG3002AEB Low VF MEGA Schottky barrier diode Product specification 2002 May 06 Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode FEATURES PMEG3002AEB PINNING • Forward current: 0.2 A
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BB143
Abstract: BP317 marking code l
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB143 Low-voltage variable capacitance diode Preliminary specification 1999 May 12 Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode BB143 PINNING FEATURES • Excellent linearity
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