M33 100 Search Results

IRF 715

Abstract: 4703B 4706B 4735B F2708 F27081 F3508 F3516E 64X7X5 512X8 24 PIN EPROM
Contextual Info: FAIRCHILD MEMORIES READ ONLY MEMORIES MOS/CMOS ROMs, EPROMs AND CHARACTER GENERATORS No. ot Pins Logic/Connectic Diagram 1000 715 C 24 M28 7M 500 C 16 M29 6Z 24 M30 7M 24 M33 7M 24 M33 7M 24 M33 7M Package s Power Dissipati« mW (Max) Character Generator

256X8

Abstract: 3-30C 4735B F2708 F27081 F3508 F3516E
Contextual Info: FAIRCHILD MEMORIES READ ONLY MEMORIES MOS/CMOS ROMs, EPROMs AND CHARACTER GENERATORS No. ot Pins Logic/Connectic Diagram 1000 715 C 24 M28 7M 500 C 16 M29 6Z 24 M30 7M 24 M33 7M 24 M33 7M 24 M33 7M Package s Power Dissipati« mW (Max) Character Generator

F3516E

Abstract: 512X8 24 PIN EPROM 3257 character generator 256X8 F464 4735B F2708 F27081 F3508 character generator
Contextual Info: FAIRCHILD MEMORIES READ ONLY MEMORIES MOS/CMOS ROMs, EPROMs AND CHARACTER GENERATORS No. ot Pins Logic/Connectic Diagram 1000 715 C 24 M28 7M 500 C 16 M29 6Z 24 M30 7M 24 M33 7M 24 M33 7M 24 M33 7M Package s Power Dissipati« mW (Max) Character Generator

rom 512x8

Abstract: 1024x8 256X8 4735B rom 1024x8 F2708 F27081 F3508 F3516E 512X8
Contextual Info: FAIRCHILD MEMORIES READ ONLY MEMORIES MOS/CMOS ROMs, EPROMs AND CHARACTER GENERATORS No. ot Pins Logic/Connectic Diagram 1000 715 C 24 M28 7M 500 C 16 M29 6Z 24 M30 7M 24 M33 7M 24 M33 7M 24 M33 7M Package s Power Dissipati« mW (Max) Character Generator

Contextual Info: M23-M33-M43-M63 Pressure gauges with electrical contacts intrinsically safe version M23/M33 - Differential pressure M43 - Relative pressure with strong overpressure M63 - Pression Absolue Gauges with bellows Ø 150 mm For corrosive fluids and atmospheres Low

Contextual Info: M23-M33-M43-M63 Eigensichere Druckmesser mit elektrischer Kontakteinrichtung M23/M33 - Differenzdruck M43 - Relativer Druck mit hohem Überdruck M63 - Absolutdruck Druckmesser Ø 150 mm mit Wellrohrfedern Für korrosive Flüssigkeiten und Umgebungen Induktivkontakte

M33 thermal

Abstract: M33-2N
Contextual Info: DC Solid State Relay M33-2N TRANSFORMER ISOLATED, HIGH SURGE CURRENT Part Number* Relay Description DC M33-2N Solid State Relay With High Surge Current Capability * * The Y suffix denotes parameters tested to MIL-R-28750 specifications. The W suffix denotes parameters tested to Teledyne specifications.

transistor m33

Abstract: NEC TRANSISTOR MARKING CODE M33 TRANSISTOR NE851M33 NE851M33-T3 date code marking NEC
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold (M33) package

Contextual Info: M23-M33-M43-M63 Manomètres à contacts électriques en sécurité intrinsèque M23/M33 - Pression Différentielle M43 - Pression Relative avec forte surpression M63 - Pression Absolue Manomètres Ø 150 mm à soufflets Pour atmosphères et fluides corrosifs

M33 TRANSISTOR

Abstract: NEC TRANSISTOR MARKING CODE NE687M33 NE687M33-T3
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE687M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-pin super lead-less minimold (M33) package

NESG2107M33

Abstract: NESG2107M33-A NESG2107M33-T3-A
Contextual Info: PRELIMINARY DATA SHEET NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION

M33-2N

Abstract: MIL-R- FET m332n FIRING squib
Contextual Info: mmmss 53223 SOLID-STATE RELAY SQUIB FIRING RELAY mm M M M W FEATURES • • • • • • Replaces Teledyne M33-2N Magnetic Coupling Fast Turn on Times 1000 VRMS Isolation Excellent Parametric Stability Power FET Output - Low On-state Resistance Load Current Pulses up to 100A

UKA720

Abstract: TV horizontal Deflection Systems zener diode 12c TDA9150B UKA716 pulse amplitude modulation using 555
Contextual Info: INTEGRATED CIRCUITS TDA9150B Programmable deflection controller Preliminary specification File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS PHILIPS 71 1 0 0 2 b 00 70 15 5 M33 Preliminary specification Philips Semiconductors Programmable deflection controller

Contextual Info: 53223 SOLID-STATE RELAY SQUIB FIRING RELAY mM M M M M FEATURES • Replaces Teledyne M33-2N • Magnetic Coupling Fast Turn on Times 1000 VRMS Isolation Excellent Parametric Stability • Power FET Output - Low On-state Resistance • Load Current Pulses up to 100A

M33 fuse

Abstract: M32 fuse
Contextual Info: AC Inlet/Outlet IEC 320 Connectors - M32 Series NEMA Receptacles - M33 Series IEC 320 CONNECTORS PART NUMBER LEGEND M320 - XX - X SPECIFICATIONS: Material: Insulator: Polycarbonate rated UL 94V-0 Insulator color: Black Contacts: Brass QQ-B-626 Plating: Contacts: 50 µin bright nickel to QQ-N-290, Class 2, Grade C

NE687M33

Abstract: NE687M33-A NE687M33-T3-A MARKING CODE m33
Contextual Info: DATA SHEET NEC's NPN SILICON TRANSISTOR NE687M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE687M33-A 50 pcs (Non reel)

NE685M33-T3-A

Abstract: NE685M33 NE685M33-A
Contextual Info: DATA SHEET NEC's NPN SILICON TRANSISTOR NE685M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • INSERTION POWER GAIN: |S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION

M33 fuse

Abstract: IEC 320 power inlet with fuse IEC 320 power inlet
Contextual Info: AC Inlet/Outlet IEC 320 Connectors - M32 Series NEMA Receptacles - M33 Series IEC 320 CONNECTORS PART NUMBER LEGEND M320 - XX - X SPECIFICATIONS: Material: Insulator: Polycarbonate rated UL 94V-0 Insulator color: Black Contacts: Brass QQ-B-626 Plating: Contacts: 50 µin bright nickel to QQ-N-290, Class 2, Grade C

Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

date code marking NEC

Abstract: NEC TRANSISTOR MARKING CODE code marking NEC M33 marking NEC MARKING CODE NE685M33-T3 NE685M33 M33 TRANSISTOR
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE685M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz 2 • S21e = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

Contextual Info: DC Solid S ta te Relay "W"TELEDYNE RELAYS TR A N SFO R M ER ISO LA TED , HIGH S U R G E C U R R EN T Part Number* M 33-2N M33-2N Relay Description Solid State Relay With High Surge Current Capability * The Y suffix denotes parameters tested to M IL -R -2 87 50 specifications.

barnier 8010

Abstract: N48.315 PM114/93 B65541-D-R30 n48 smd B65651-D-R48 SMD N48 N48 315 B65541D100A33 b65611-D-R48
Contextual Info: Генеральный представитель Epcos по ферритам в России и СНГ СОДЕРЖАНИЕ: 1 Вступление 2 Характеристики материалов 5 3 Сердечники конфигурации P 10

Contextual Info: VHF/UHF Transistors NPN Silicon 3 COLLECTOR MMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc CASE 318–08, STYLE 6

mmbth10

Abstract: MMBTH10LT1 M33 thermal marking M33 RB marking
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors NPN Silicon 3 COLLECTOR MMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0