M2E2 Search Results

dual-gate

Abstract: M2E2 2f3 transistor
Contextual Info: 4. AGC OF DUAL-GATE MOS FET 4.1 Typical AGC Circuit in Dual-gate MOS FETs 4.2 Relationship Between V an and Cross Modula­ tion, lyfsl, ID Dual-gate MOS FET AGC automatic gain con­ trol is achieved by changing the bias o f Gate 2. This type o f control is used mainly for the R F stage

8582c

Abstract: 8092D
Contextual Info: 111 234561111111 1111111111111111111 1111111111 12345167897A8 12345167897A8 F8928E22 ! BCDEF "#1$"% & ' %62% 2(%!*+2F892!",

Contextual Info: 234561111111 11 111111111111111111111111 1111111111 123451678179 123451678179 F8928E22 !" ABCDEF # $1%#&'!#' &62&*2&"+,2F892"## $1%.&'!#'()&62*2&"+,2F892"#-

Contextual Info: 234561111111 111 1111111111111111111 1111111111 123451678879A 123451678879A F8928E22 ! BCDEF "#1$"% "#1$,% &'%62% 2%! *2F892!"+

RH1034-1.2

Abstract: B8924
Contextual Info: 234561111111 111 1111111111111111111 1111111111 1234516782798 1234516782798 F8928E22 ABCDEF !"1#!$%&'$62$ 2'$ *2F892 !+

5252F

Abstract: 529D
Contextual Info: 234561111111 11 111111111111111111111111 1111111111 12345167897A 12345167897A F8928E22 ! BCDEF "#1$"%& &' %62% 2%!*+2F892!",

Contextual Info: 234561111111 111 1111111111111111111 1111111111 123451678279A 123451678279A F8928E22 BCDEF !"1#!$%&'$62$ 2'$ *2F892 !+

cdb 4121 e

Abstract: 8582c
Contextual Info: 111 234561111111 1111111111111111111 1111111111 12345167897A9 12345167897A9 F8928E22 ! BCDEF "#1$"% &' %62% 2(%!*+2F892!",

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

Contextual Info: 234561111111 111 1111111111111111111 1111111111 1234516788798 1234516788798 F8928E22 ! ABCDEF "#1$"% "#1$,% & '%62% 2%! *2F892!"+

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or