M21 TRANSISTOR Search Results

Contextual Info: Darlington Transistors NPN Silicon MMBT6427LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 40 Vdc Emitter–Base Voltage V 12 Vdc 500 mAdc Collector Current — Continuous

Contextual Info: MOTOROLA Order this document by MHW5172A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5172A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization

439 motorola

Abstract: 5Bp power mhw5342a motorola 714
Contextual Info: MOTOROLA Order this document by MHW5342A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5342A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization

Contextual Info: MOTOROLA Order this document by MHW5272A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5272A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization

MHW5382A

Contextual Info: MOTOROLA Order this document by MHW5382A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV AMPLIFIER MHW5382A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization

MHW5342A

Contextual Info: MOTOROLA Order this document by MHW5342A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5342A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization

439 motorola

Abstract: motorola 714 MHW5182A
Contextual Info: MOTOROLA Order this document by MHW5182A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5182A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization

MHW5182A

Abstract: motorola Cross Reference
Contextual Info: MOTOROLA Order this document by MHW5182A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5182A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization

Contextual Info: MOTOROLA Order this document by MHW5382A/D SEMICONDUCTOR TECHNICAL DATA MHW5382A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization system. • Specified for 53– and 60–Channel Performance

Contextual Info: MOTOROLA Order this document by MHW5182A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 4 5 0 M H z CATV A m p lifie r M H W 5182A . . . designed specifically for 450 MHz CATV applications. Features ion-im planted arsenic emitter transistors with 7.0 GHz f j and an all gold metallization

Contextual Info: MOTOROLA Order this document by MHW5342A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 4 5 0 M H z CATV A m p lifie r M H W 5342A . . . designed specifically for 450 MHz CATV applications. Features ion-im planted arsenic emitter transistors with 7.0 GHz f j and an all gold metallization

Contextual Info: Transistors Digital Transistor Isolated Dual Digital Transistors UMH3N / IMH3A •E x te rn a l dim ensions (Units: mm) • F e a tu re s 1) T w o D T A K 13 T in U M T an d SM T IMH3A UMH3N packages. 2.0 ± 0.2 2) M o u n tin g p o s s ib le w ith UM T3 o r

Contextual Info: MOTOROLA Order this document by MHW5222A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 4 5 0 M H z CATV A m p lifie r M H W 5222A . . . designed for broadband applications requiring low distortion characteristics. Specifically intended for CATV market requirements. Features ion-im planted

L9935

Abstract: POWERSO20 flayback
Contextual Info: L9935 TWO-PHASE STEPPER MOTOR DRIVER PRODUCT PREVIEW 2 X 1.1A FULL BRIDGE OUTPUTS INTEGRATED CHOPPING CURRENT REGULATION MINIMIZED POWER DISSIPATION DURING FLYBACK OUTPUT STAGES WITH CONTROLLED OUTPUT VOLTAGE SLOPES TO REDUCE ELECTROMAGNETIC RADIATION SHORT-CIRCUIT PROTECTION OF ALL

MHW5122A

Abstract: MHW5122
Contextual Info: MOTOROLA Order this document by MHW5122A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5122A . . . designed for broadband applications requiring low distortion characteristics. Specified for use as a CATV trunk–line amplifier. Features ion–implanted

439 motorola

Abstract: MHW5222A
Contextual Info: MOTOROLA Order this document by MHW5222A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5222A . . . designed for broadband applications requiring low distortion characteristics. Specifically intended for CATV market requirements. Features ion–implanted

L9935

Abstract: XX111111
Contextual Info: L9935 TWO-PHASE STEPPER MOTOR DRIVER 2 X 1.1A FULL BRIDGE OUTPUTS INTEGRATED CHOPPING CURRENT REGULATION MINIMIZED POWER DISSIPATION DURING FLYBACK OUTPUT STAGES WITH CONTROLLED OUTPUT VOLTAGE SLOPES TO REDUCE ELECTROMAGNETIC RADIATION SHORT-CIRCUIT PROTECTION OF ALL

m21 transistor

Abstract: stepper motor 12v connection flayback L9935 transistor m21
Contextual Info: L9935  TWO-PHASE STEPPER MOTOR DRIVER 2 X 1.1A FULL BRIDGE OUTPUTS INTEGRATED CHOPPING CURRENT REGULATION MINIMIZED POWER DISSIPATION DURING FLYBACK OUTPUT STAGES WITH CONTROLLED OUTPUT VOLTAGE SLOPES TO REDUCE ELECTROMAGNETIC RADIATION SHORT-CIRCUIT PROTECTION OF ALL

Contextual Info: MOTOROLA Order this document by MHW5122A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 4 50 MHz CATV A m plifier . . designed for broadband applications requiring low distortion characteristics. Specified for use as a CATV trunk-line amplifier. Features ion-im planted

Contextual Info: MOTOROLA Order this document by MHW5122A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 4 5 0 M H z CATV A m p lifie r . . designed for broadband applications requiring low distortion characteristics. Specified for use as a CATV tru n k -lin e am plifier. Features io n -im planted

FR07* diode

Abstract: FR07
Contextual Info: j pj j-0 f flQfjonO I Provisional Data Sheet No. PD-9.418A IOR Rectifier HEXFET POWER MOSFET IRFN450 N - CHA N N E L Product Summary Part Number I 500 Volt, 0.415ft HEXFET H EXFET technology is the key to International Rectifier’s advanced line of power M O S F E T transistors.The effi­

KE724503

Abstract: 748 transistor on LC20A KE7245
Contextual Info: 31E D POWEREX INC m M B Œ • TS^MbEl OOOMMlfl-T M P R X KE7245Ó3 X Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Six-Darlington Transistor Module

Contextual Info: L9935 Two-phase stepper motor driver Features • 2 x 1.1 A full bridge outputs ■ Integrated chopping current regulation ■ Minimized power dissipation during flyback ■ Output stages with controlled output voltage slopes to reduce electromagnetic radiation

AN2378

Abstract: POWERSO20 L9935 L9935013TR
Contextual Info: L9935 Two-phase stepper motor driver Features • 2 x 1.1 A full bridge outputs ■ Integrated chopping current regulation ■ Minimized power dissipation during flyback ■ Output stages with controlled output voltage slopes to reduce electromagnetic radiation