M2023 SWITCH Search Results

M2047 toggle switch

Abstract: LM 7850 M2013 toggle switch m2022 toggle switch E4F 250V 3A M2046 M2019 poly aluminum chloride U2042 M2011
Contextual Info: D IS T IN C T IV E F E A T U R E S Antirotation feature is standard on noncylindrlcal levers Antijamming design on toggle switches protects contacts from damage due to excessive downward force on the actuator. High torque bushing construction prevents rotation or separation from frame

AT4156

Abstract: switch M2044 M2012 6A 125V M2019 HK-2 M2044 M2012 M2032 M2013 M2015
Contextual Info: Miniature Rockers Series M Distinctive Characteristics Three methods of panel mounting: flat frame for flush with face or subpanel, snap-in, and PCB. High insulating barriers increase isolation of circuits in multipole devices and provide added protection to contact points.

MARK B83

Abstract: M2026 M2012 6A 125V
Contextual Info: Slides Rotaries Keylocks Programmable Illuminated PB Pushbuttons Rockers Toggles Series M Miniature Rockers General Specifications B Electrical Capacity Resistive Load Power Level (silver): 6A @ 125V AC & 3A @ 250V AC 4A @ 30V DC for On-None-On; 3A @ 30V DC for all other circuits

M2042SS1W01

Abstract: IEC60529 M2011 M2012 M2013 M2013SS1W01 M2015 M2018
Contextual Info: Miniature Toggles Series M Distinctive Characteristics Antirotation design, standard on noncylindrical levers, mates toggle and bushing; bottom of toggle has two flatted sides which fit into a complementary opening inside bushing. Antijamming design protects contacts from damage due

IEC529

Abstract: M2011 M2012 M2013 M2013SS1W01 M2015 M2018 M12-P1 M-2011
Contextual Info: Miniature Toggles Series M Distinctive Characteristics Antirotation design, standard on noncylindrical levers, mates toggle and bushing; bottom of toggles has two flatted sides which fit into a complementary opening inside bushing. Antijamming design protects contacts from damage due

Contextual Info: Miniature Toggles Series M Distinctive Characteristics Antirotation design, standard on noncylindrical levers, mates toggle and bushing; bottom of toggle has two flatted sides which fit into a complementary opening inside bushing. Antijamming design protects contacts from damage due

IEC60529

Contextual Info: Miniature Toggles Series M Distinctive Characteristics Antirotation design, standard on noncylindrical levers, mates toggle and bushing; bottom of toggle has two flatted sides which fit into a complementary opening inside bushing. Antijamming design protects contacts from damage due

M2046

Abstract: M2013SS1W01 M2033 On-On-On SP3T
Contextual Info: General Specifications Electrical Capacity Resistive Load Power Level (silver): 6A @ 125V AC & 3A @ 250V AC 4A @ 30V DC for On-None-On & On-None-Off; 3A @ 30V DC for all other circuits Logic Level (gold): 0.4VA maximum @ 28V AC/DC maximum (Applicable Range 0.1mA ~ 0.1A @ 20mV ~ 28V)

M2022 L power switch

Abstract: m2022 toggle switch switch M2044 M2012 6A 125V M2022 LL2 power switch M2042SS1W01 RING LUG M6 IEC60529 M2011 M2012
Contextual Info: Miniature Toggles Series M Distinctive Characteristics Antirotation design, standard on noncylindrical levers, mates toggle and bushing; bottom of toggle has two flatted sides which fit into a complementary opening inside bushing. Antijamming design protects contacts from damage due

Contextual Info: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible

Contextual Info: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)

Contextual Info: Honeywell Military/Space Products Preliminary 32K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6256 FEATURES RADIATION OTHER Fabricated with RICMOS -IV Silicon on Insulator SOI 0.8 nm Process • Read/Write Cycle Times < 25 ns (-55 to 125°C) Total Dose Hardness through 1x10erad(Si02)

HX6856

Abstract: x-ray cmos HX6856/2
Contextual Info: • I K U Military Products Preliminary 32K x 8 RADIATION-HARDENED STATIC RAM-SGI HX6856 FEATURES OTHER RADIATION Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |nm Process • Read/Write Cycle Times < 2 5 ns (-55 to125°C ) Total Dose Hardness through 1x106 rad(S i02)

Contextual Info: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as