M1N CODE MARKING Search Results

CI 4016

Abstract: IC 4011 pin DETAIL 1N3287 h-MiLS sol 4011 be NSPE m1n code marking Scans-0015999 10 DC-1 diode
Contextual Info: MIL SPECS 44E D □ □□DIES QQ32223 T « M I L S i recH-'poiifjp | MIL-S-19500/205B 11 JUNE 1990 SUPERSEDING-MIL-S-19500/205A 16 February 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIOOE, GERMANIUM, LOU LEVEL, FORWARD-VOLTAGE-REFERENCE TYPE 1N3287 JAN, JANTX, AND JANTXV

8202102YX

Abstract: 8202102 TS68000MR ts68000mcb smd marking a60 TS68000MC ASUS AIA23 ts68000mrb D152J
Contextual Info: REVISIONS LTR DATE YR-MO-DA DESCRIPTION Add V parameters. 1 .3 : APPROVED 1984 MAR 2 A Table I : 1.75 mW. Change Pn from 1.5 mW to u B Revise ta b le I lim it s , add 10 MHz device, revise operating temperature range, and re vise waveforms. 1985 DEC 16

Scans-0016000

Contextual Info: MIL SPECS MME D • D0DD1EIS Q D 3 S 2 B 3 2 ■ MILS I inch -pound ~T M1L-S-19500/226B 11 JUNE 1990 SUPERSEDING MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV This specification Is approved for use by all Depart­

Contextual Info: COUNT DESCRIPTION OF REVISIONS BY CHKD DATE I DESCRIPTION OF REVISIONS COUNT I BY CHKD DATE I AP PLIC A TIO N S T A N D A R D OPERATING TEMPERATURE RANGE STORAGE TEMPERATURE RANGE OPERATING HUMIDITY RANGE -55 “t TO +85 “C RATING VOLTAGE 125 V AC I¡CURRENT

25ls299

Abstract: ca6E 54LS299
Contextual Info: A R EVI SI ON S G D ATE D E S C R IP T IO N LT R Delete vendor CAGE 34335. Convert to m ilitary drawing format. Delete minimum lim its from propagation delays. Add logic diagram. 1 July 1987 APPRO VED lu&yUL REV PAGE REV STATUS OF PAGES REV 10 13 12 13 14 15

Contextual Info: REVISIONS LTR DATE YR-MO-QA DESCRIPTION A Changes to recommended operating conditions and table I. vendors FSCM 27014 and 18714. B Convert to standardized military drawing format. Add vendor CAGE 27014 to device type 012X. Technical changes to 1.4 and table I. Device 01BX inactive for new design. Not available

MA4Z713

Abstract: MA4S713
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4Z713 (MA4S713) Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching For wave detection • Package ■ Features • Code SMini4-F1 • Pin Name

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4Z713 (MA4S713) Silicon epitaxial planar type For switching For wave detection • Package ■ Features • Code SMini4-F1 • Pin Name • Two isolated elements are contained in one package, allowing

Contextual Info: i H IR D ANGLE PROJECTION ECWH 12362R V / 1 / 1 / 1 / 1 12392ROV 12432ROV 12472R()V 12512R()V 12562R()V 12622R()V 12682R()V 12752R()V 1 / 12822ROV 1 / 12912R()V / 1 / 1 I 1 1 / I 1 / 1 / 1 1 1 / 1 12103ROV 12113ROV 12123R()V 12133R()V 12153R()V 12163R()V

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4Z7130G Silicon epitaxial planar type For switching For wave detection • Package ■ Features • Code SMini4-F2 • Pin Name • Two isolated elements are contained in one package, allowing

MA4Z7130G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4Z7130G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching For wave detection • Package ■ Features • Code SMini4-F2 • Pin Name

MA3X704A

Abstract: MA4X7130G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X7130G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching For wave detection • Package • Two isolated elements are contained in one package, allowing

1N277

Abstract: marking 201B 201-B Diode germanium oa
Contextual Info: I n icR -Pö u m rr MIL-S-19500/201B 25 SeDtember 1989 s u r a m m r c -kit I r i n c ft ft /OA1 a niL-i-iy3UU/CUlW 26 A p ril 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM TYPE IN277 JAN, JANTX, AND JANTXV T his s p e d f i C a t i o n i s approved fo r use by à !' Depart

smd marking ARB

Abstract: SMD MARKING CODE A31 DSne 10 smd code marking js 68442-8 A24 SMD SMD MARKING CODE A12 11-01-0118 E1557
Contextual Info: REVISIONS DATE YR-MO-OA DESCRIPTION LTR appr o ved REV SHEET REV SHEET 22 REV STATUS OF SHEETS 23 SHEET 28 29 30 1 2 3 4 PREPARED BY PMICN/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4Z713 (MA4S713) Silicon epitaxial planar type For switching For wave detection • Package ■ Features • Code SMini4-F1 • Pin Name M Di ain sc te on na tin nc

MA4Z7130G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4Z7130G Silicon epitaxial planar type For switching For wave detection • Package ■ Features • Code SMini4-F2 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo

1750 Hz TONE dEcoder

Abstract: FX623 FX623P
Contextual Info: o w n CML Semiconductor Products PRODUCT INFORMATION -y FX623 Call Progress Tone Decoder Publication D/623/3 July 1994 Provisional Issue Features • Measures Call Progress Tone Frequencies [‘Busy’, ‘Dial’, ‘Fax-Tone’ etc.] • Custom Tone Decoder

MA3X704A

Abstract: MA4X7130G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X7130G Silicon epitaxial planar type For switching For wave detection • Package • Two isolated elements are contained in one package, allowing high-density mounting

26ls34

Abstract: H9205 marking code EY SMD SMD MARKING CODE ACQ
Contextual Info: AMD DEFENSE LOGISTICS AGENCY OE F E N S C E L E C T R O N tC S SU PPLY CENTER DAYTON, OH 4 5444-5254 REFTP TO- D E S C -E C S M s. R o o n e y /(A V 986 5 1 3 -2 9 6 -6 0 4 7 /n jj) 2 4 JUN 1992 JUL 0 9 1992 S U B JE C T : N o tice o f R e v isio n (N O R ) 5 9 6 2 - R 2 14-92 fo r S ta n d a rd iz e d

ay 9j

Abstract: MARKING CODE yac OP44 E3-E12 ITT doeh
Contextual Info: M IL SPECS IC 1 □00D15S O O ab?11!! b TDfCH-'PgUNDT MIL-M-38510/122A 15 September 1989 w n r m r n r e -MIL-M-38510/122 9 A p r i l 1980 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, HIGH SLEW RATE OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON This s p e c i f i c a t i o n 1s approved f o r use by a l l Depart­

1N4306

Abstract: IC 4011 pin DETAIL 1H4306 diode 1N 4001
Contextual Info: 1» — ^ — - ri T ’TBTTnWSnrrTT I * i * w n - r w u n u | I The documentation and process I ¡conversion measures necessary to I I r run n 1 u w l f h hle kill I fwwmpi j nibii twin j 'ç » i3 iv h e*»•«»• » Ibe completed by 19 September 1991 I

E1116

Abstract: 10H564/BEAJC
Contextual Info: REVISIONS DATE YB-MO-OA DESCRIPTION LTR Add figure 4. Technical changes to table I . Change in terminal connections. Technical changes in 1 .3 , 1 .4 , and table I I . E d ito ria l changes throughout. A APPROVED 89 AUG 15 REV SHEET REV SHEET REV STATUS

500C

Contextual Info: REVISIONS LTR DESCRIPTION APPROVED DATE YR-MO-DA Technical changes in 1.4. Added test condition A to 4.2 and 4.3.2 step 1. Editorial changes throughout 1989 OCT 23 (1 REV SH EET R EV SH EET R EV STATUS O F SH EETS REV SH EET PMIC N/A 10 11 Y STANDARDIZED

ICM7170

Contextual Info: DESC FORM 193 MAY 86 _ i 1. _ SCOPE 1.1 Scope. This drawing describes device requirements fo r class B m icro circu its 1n accordance with 1 .2 .1 o f MiL-STD-883, "Provisions fo r the use o f MIL-STD-883 In conjunction w ith compliant non-JAN