M14 TRANSISTOR Search Results

M14 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini	Datasheet
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet

M14 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NEC JAPAN Abstract: NESG3031M14 NESG3031M14-T3 Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification	Original	nesg3031m14 nesg3031m1conductor nec japan nesg3031m14-t3	PDF
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM C RF TRANSISTOR NESG4030M14 NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification	Original	nesg4030m14 nesg4030m14-a nesg4030m14-t3 nesg4030m14-t3-a	PDF
Contextual Info: Preliminary Data Sheet NESG3033M14 R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG FEATURES • The NESG3033M14 is an ideal choice for low noise, high-gain amplification	Original	nesg3033m14 nesg3032m14 r09ds0049ej0300 nesg3033m14-a +2nesg3033m14-t3 nesg3033m14-t3-a	PDF
Contextual Info: Preliminary Data Sheet NESG3032M14 R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG <R> FEATURES • The NESG3032M14 is an ideal choice for low noise, high-gain amplification	Original	nesg3032m14 r09ds0048ej0300 nesg3032m14-a nesg3032m14-t3 +1nesg3032m14-t3-a	PDF
Contextual Info: Preliminary Data Sheet NESG3033M14 R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG FEATURES • The NESG3033M14 is an ideal choice for low noise, high-gain amplification	Original	nesg3033m14 r09ds0049ej0300 nesg3032m14 nesg3033m14-a	PDF
NE5814 Abstract: NE5814M14 HS350 microphone sensor Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NE5814M14 P-CHANNEL LOW NOISE MOS FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF MICROPHONE 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG DESCRIPTION The NE5814M14 is a P-channel silicon MOS FET designed for use as impedance converter for microphone.	Original	ne5814m14 ne5814or pu10628ej01v0ds ne5814 +2hs350 microphone sensor	PDF
NESG3033M14 Abstract: MCR01MZPJ5R6 Contextual Info: A Business Partner of Renesas Electronics Corporation. Preliminary NESG3033M14 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 FEATURES • The NESG3033M14 is an ideal choice for low noise, high-gain amplification	Original	nesg3033m14 r09ds0049ej0300 nesg3032m14 nesg3033m14-a +1mcr01mzpj5r6	PDF
Contextual Info: A Business Partner of Renesas Electronics Corporation. Preliminary NESG3032M14 Data Sheet R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG <R> FEATURES • The NESG3032M14 is an ideal choice for low noise, high-gain amplification	Original	nesg3032m14 r09ds0048ej0300 nesg3032m14-a	PDF
NESG3032M14 Abstract: NEC ROHS COMPLIANT HBT transistor s parameters measures nec rohs marking Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz	Original	nesg3032m14 nesg3032m14-a nec rohs compliant hbt transistor s parameters measures +1nec rohs marking	PDF
1208 marking Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz	Original	nesg3033m14 nesg3032m14 nesg3033m14-a pu10640ej01v0ds +11208 marking	PDF
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz	Original	nesg3033m14 nesg3032m14 nesg3033m14-a nesg3033m14-t3 +1nesg3033m14-t3-a	PDF
NEC ROHS COMPLIANT Abstract: NEC PART NUMBER MARKING NESG3032M14 NESG3033M14 NESG3033M14-A NESG3033M14-T3 NESG3033M14-T3-A Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz	Original	nesg3033m14 nesg3032m14 nesg3033m14-a nec rohs compliant +3nec part number marking nesg3033m14-t3 nesg3033m14-t3-a	PDF
NESG3033M14 Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz	Original	nesg3033m14 nesg3032m14 nesg3033m14-a nesg3033m14-t3 +2nesg3033m14-t3-a pu10640ej01v0ds	PDF
NESG3032M14 Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz	Original	nesg3032m14 nesg3032m14-a	PDF

NESG3031M14 Abstract: NESG3031M14-A NESG3031M14-T3 NESG3031M14-T3-A Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz	Original	nesg3031m14 nesg3031m14-a nesg3031m14-t3 nesg3031m14-t3-a	PDF
3 w RF POWER TRANSISTOR NPN 5.8 ghz Abstract: RF TRANSISTOR 2.5 GHZ s parameter ZL+58 Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz	Original	nesg3031m14 nesg3031m14-a pu10415ej04v0ds 3 w rf power transistor npn 5.8 ghz +2rf transistor 2.5 ghz s parameter zl+58	PDF
NESG4030M14 Abstract: NESG4030M14-A NESG4030M14-T3 NESG4030M14-T3-A Contextual Info: NPN SILICON GERMANIUM C RF TRANSISTOR NESG4030M14 NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz	Original	nesg4030m14 nesg4030m14-a m8e0904e nesg4030m14-t3 +1nesg4030m14-t3-a	PDF
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz	Original	nesg3031m14 nesg3031m14-t3 nesg3031m14-a nesg303ntrol	PDF
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz	Original	nesg3031m14 nesg3031m14-t3	PDF
Contextual Info: DATA SHEET NPN SILICON GERMANIUM C RF TRANSISTOR NESG4030M14 NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz	Original	nesg4030m14 nesg4030m14-a nesg4030m14-t3 nesg4030m14-t3-a +1m8e0904e	PDF
NESG3031M14 Abstract: NESG3031M14-A NESG3031M14-T3 NESG3031M14-T3-A Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz	Original	nesg3031m14 nesg3031m14-a nesg30nec nesg3031m14-t3 +1nesg3031m14-t3-a	PDF
Contextual Info: General Purpose Transistors NPN Silicon BCW72LT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 45 Vdc Collector–Base Voltage V CBO 50 Vdc Emitter–Base Voltage V EBO 5.0 Vdc IC 100 mAdc 1 2 CASE 318–08, STYLE 6	Original	bcw72lt1 236ab	PDF
1N916 Abstract: BCW72LT1 MPS3904 Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon BCW72LT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 45 Vdc Collector–Base Voltage V CBO 50 Vdc Emitter–Base Voltage V EBO	Original	bcw72lt1 236ab 1n916 mps3904	PDF
RF power transistors cross reference Abstract: CATV MHW Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 45 0 MHz CATV AM PLIFIER MHW 5382A . . . designed specifically for 450 MHz CATV applications. Features ion-implanted arsenic emitter transistors with 7.0 GHz fr and an all gold metallization system. • Specified for 53- and 60-Channel Performance	OCR Scan	60-channel mhws382a mhw5382a rf power transistors cross reference +1catv mhw	PDF

M14 TRANSISTOR Search Results

M14 TRANSISTOR Result Highlights (5)

M14 TRANSISTOR Datasheets Context Search

NEC JAPAN

NE5814

NESG3033M14

NESG3032M14

1208 marking

NEC ROHS COMPLIANT

NESG3033M14

NESG3032M14

NESG3031M14

3 w RF POWER TRANSISTOR NPN 5.8 ghz

NESG4030M14

NESG3031M14

1N916

RF power transistors cross reference