M1238 Search Results

transistor oscillator circuit

Abstract: AN95007 hyperabrupt tuned oscillator inductive loop circuit diagram clapp oscillator
Contextual Info: Understanding VCO Concepts OSCILLATOR FUNDAMENTALS An oscillator circuit can be modeled as shown in Figure 1 as the combination of an amplifier with gain A jω and a feedback network β (jω), having frequency-dependent open-loop gain H (jω) = βA. Figure 1

PL301

Abstract: "3570 1210" FG873 N4000A N8975A
Contextual Info: Ultra Low Noise, Low Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 16 dB at 2 GHz • High Output IP3, +25 dBm • Low Current, 15mA • Wide bandwidth • External biasing and matching required TAV-551+ CASE STYLE: FG873

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-454CB64S 4 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-454CB64S is a 4,194,304 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 64 M SDRAM: /¿PD4564163 (Revision E) are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /XPD 431536L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT FLOW THROUGH OPERATION Description The ,uPD431536L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-454CB64S 4 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-454CB64S is a 4,194,304 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 64 M SDRAM: ,uPD4564163 (Revision E) are assembled.

Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD431536L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT FLOW THROUGH OPERATION Description The µPD431536L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 16 dB at 2 GHz • High Output IP3, +25 dBm • Output Power at 1dB comp., +18 dBm • Low Current, 15mA • Wide bandwidth • External biasing and matching required

"3570 1210"

Abstract: 3570 1210 CC45T47K240G5 SAV-581 MMM1362 ATF-58143 840nH HP4155B TB-471 N8975A
Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +30 dBm • Output Power at 1dB comp., +20 dBm • Medium Current, 30mA • Wide bandwidth • External biasing and matching required

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-454CB64S 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-454CB64S is a 4,194,304 words by 64 bits synchronous dynam ic RAM module (Small Outline DIMM) on which 4 pieces of 64 M SDRAM: ^¡PD4564163 are assembled.

SAV-541

Abstract: SAV-541 S-PARAMETER MODEL ATF-54143 MMM1362 N8975A
Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

TAV-541

Abstract: FG873 N4000A N8975A tav 541
Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

GW AE

Contextual Info: DATA SHEET_ NEC MOS INTEGRATED CIRCUIT jUPD431536L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT FLOW THROUGH OPERATION Description The /¿PD431536L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-454CB64S 4 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-454CB64S is a 4,194,304 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 64 M SDRAM: µPD4564163 (Revision E) are assembled.

Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

atf-58143

Abstract: SAV-581 MMM1362 ATF-58143 application notes
Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +30 dBm • Output Power at 1dB comp., +20 dBm • Medium Current, 30mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +31 dBm • Output Power at 1dB comp., +19 dBm • Low Current, 30mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, Low Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 16 dB at 2 GHz • High Output IP3, +25 dBm • Output Power at 1dB comp., +18 dBm • Low Current, 15mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +31 dBm • Output Power at 1dB comp., +19 dBm • Low Current, 30mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431536L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT FLOW THROUGH OPERATION Description The µPD431536L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

"3570 1210"

Abstract: FG873 N4000A N8975A TAV-581 CC45T47K240G5
Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +31 dBm • Output Power at 1dB comp., +19 dBm • Low Current, 30mA • Wide bandwidth • External biasing and matching required