M-FK 222 Search Results

FK 216 SA

Abstract: Heatsinks FK 220 FK222 211sa Heatsinks to-220
Contextual Info: Hola1 H A H Heatsinks for transistors in plastic case art. no. B C FK 211 32 . art. no. D FK 212 CB . art. no. E F FK 215 32 . art. no. G FK 216 SA art. no. H FK 222 . art. no. I K FK 222 THF . art. no. L FK 247 220 . please indicate: M . surface treatment

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK38V2228 12.2— 12.8GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FK 38V 2228 is an internally impedance matched GaAs power FE T especially designed fo r use in 12.2 ~ 12.8 GHz band amplifiers. The herm etically sealed metal-ceramic

M-FK 222

Abstract: DIN EN 60751 heraeus pt 100 heraeus pt 1000 M-FK222 FK222 mfk 222 acceleration sensor vibration sensors Platinum Resistance Temperature Detector heraeus
Contextual Info: M-FK 222 Platinum Resistance Temperature Detector F series PRTDs are designed for large volume applications where long term stability, interchangeability and accuracy over a large temperature range are vital. Typical applications are Automotive, White goods, HVAC, Energy management,

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK 38V2228 1 2 .2 — 12.8G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 8 V 2 2 2 8 is an internally impedance matched GaAs power F E T especially designed for use in 12.2 ~ 12.8 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFK38V2228

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK 38V2228 1 2 .2 — 12.8G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 8 V 2 2 2 8 is an internally impedance matched GaAs power F E T especially designed for use in 12.2 ~ 12.8 GHz band amplifiers. The hermetically sealed metal-ceramic

F10B

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK 38V2228 1 2 .2 — 12.8G H z BAND 6 W INTERNALLY MATCHED GaAs FET D E SC R IPT IO N The M G F K 3 8 V 2 2 2 8 is an inte rn a lly impedance matched GaAs power F E T especially designed fo r use in 12 .2 ~ 1 2 .8 G H z band am plifiers. The herm etically sealed m etal-ceram ic

470ohm resistor

Abstract: TQ9122 ZS11 ZS22 A008 amplifier TRANSISTOR
Contextual Info: WIRELESS I fk S E M I C O N D U C T O R , I N C COMMUNICATIONS Low-Noise Amplifier Features • 500 - 2500 MHz operation The TQ9122 Low-Noise Amplifier is part of TriQuint's RFIC Downconverter Building Block family. Intended for use as the first stage of a Low-Noise Receiver

transistor AFR 16

Abstract: BAIL4M transistor afr 22 bn1l4m ba1l4m T108
Contextual Info: I ¿Y I fK NEC m ïâ-ê- h ^ > > x 9 Compound Transistor iír / v - r z B A I L 4M í£ í / t Ñ 1 N P N X fcf f l r i s T J U 9 4t $ o £ W T H 1 ¥ - Í í L • m m ★ x f f i t Í L £ 1*1 j t L T V ' á t o ( R j = 4 7 kQ , R 2 = 4 7 k f í ) ÖE

heraeus

Abstract: heraeus pt 1000 Pt 1000 IEC 751 heraeus PT-1000 PT-100 -220 Heraeus M 422 751 1013 805-1000-B PT 10000 IEC 751
Contextual Info: 2003/09/01現在 Heraeus（ヘレウス）薄膜型白金 Pt 測温抵抗素子 RS Components K.K. 取り扱い商品 シリーズ名 FK 1020 FK 222 FK 422 FR 800 型式 FK 1020-100-A FK 1020-1000-A FK 222-100-A FK 222-1000-A FK 422-100-A FK 422-1000-A 使用温度

heraeus pt 100 M 222

Abstract: heraeus pt 100 heraeus pt 1000 PT-1000 sensor heraeus PT-1000 PT-1000 sensor range DIN EN 60751 PT 100 class A PT-100 temperature sensor smd805
Contextual Info: 2003/09/01現在 Heraeus（ヘレウス）薄膜型白金 Pt 測温抵抗素子 RS Components K.K. 取り扱い商品 シリーズ名 FK 1020 FK 222 FK 422 FR 800 型式 FK 1020-100-A FK 1020-1000-A FK 222-100-A FK 222-1000-A FK 422-100-A FK 422-1000-A 使用温度

heraeus PT-1000

Abstract: heraeus pt 1000 DIN EN 60751 heraeus heraeus pt 100 Platinum Resistance Temperature PT 100 class A heraeus pt 100 M 222 FK 222-100-A 1pt100
Contextual Info: 2003/09/01現在 Heraeus（ヘレウス）薄膜型白金 Pt 測温抵抗素子 RS Components K.K. 取り扱い商品 シリーズ名 FK 1020 FK 222 FK 422 FR 800 型式 FK 1020-100-A FK 1020-1000-A FK 222-100-A FK 222-1000-A FK 422-100-A FK 422-1000-A 使用温度

heraeus pt 100

Abstract: 32 208 285 heraeus heraeus heraeus PT-1000 PT-1000 sensor s41 sensor heraeus pt 1000 PT-1000 temperature sensor ohm PT-1000 ohm PT-100 class B
Contextual Info: 2003/09/01現在 Heraeus（ヘレウス）薄膜型白金 Pt 測温抵抗素子 RS Components K.K. 取り扱い商品 シリーズ名 FK 1020 FK 222 FK 422 FR 800 型式 FK 1020-100-A FK 1020-1000-A FK 222-100-A FK 222-1000-A FK 422-100-A FK 422-1000-A 使用温度

heraeus pt 1000

Abstract: heraeus pt 100 DIN EN 60751 Heraeus M 422 M-FK 222 PT 2000 temperature sensor ohm PT-1000 heraeus PT-1000 PT 100 class A s41 523
Contextual Info: 2003/09/01現在 Heraeus（ヘレウス）薄膜型白金 Pt 測温抵抗素子 RS Components K.K. 取り扱い商品 シリーズ名 FK 1020 FK 222 FK 422 FR 800 型式 FK 1020-100-A FK 1020-1000-A FK 222-100-A FK 222-1000-A FK 422-100-A FK 422-1000-A 使用温度

PT-1000 sensor range

Abstract: PT 100 sensor installation heraeus PT-1000 PT-10000 sensor pt 100 sensor technical data PT-1000 sensor PT 100 sensor resistance 828 smd heraeus pt 1000 heraeus 2 pt 100
Contextual Info: 2003/09/01現在 Heraeus（ヘレウス）薄膜型白金 Pt 測温抵抗素子 RS Components K.K. 取り扱い商品 シリーズ名 FK 1020 FK 222 FK 422 型式 FK 1020-100-A FK 1020-1000-A FK 222-100-A FK 222-1000-A FK 422-100-A FK 422-1000-A FR 828-1000-B

z 682

Abstract: Z682 z 154 4100 Z683 Z104 s1 g 47 455H
Contextual Info: アイテム一覧 PART NUMBERS 1005TYPE 形 名 R25 Ordering Code [kE] B定数 熱時定数 熱放散定数 B constant Thermal time Dissipation fK:25/85Cg constant factor TBP S0 Z 222 Q 410 H 5Q 2.2 4100 TBP S0 Z 332 Q 410 H 5Q 3.3 4100 TBP S0 Z 472 Q 410 H 5Q

Contextual Info: A Finger shaped heatsinks for power semiconductors 10 ,9 4,5 46 38,1 4, 2 ,2 B ,2 30 13 3,7 C 38,1 46 art. no. [mm] FK 254 SA 3 FK 318 SA FK 318 SA 3 Rth [K/W] 25.4 31.8 31.8 5.8 4.8 4.8 material: die-casting aluminium surface: black lacquered Ø 2 4, 3 Ø

JD 1803

Abstract: jd 1803 IC jd 1803 data sheet SNV55LVDS31W SNV55LVDS32W jd 1803 data SMV320C6701GLPW14 54LS74A bistable multivibrator using ic 555 SNV54LVTH162245WD
Contextual Info: Mil Sel Guide 04-home-new.qxd R 8/11/2004 2:21 PM E A L W Page 1 O R L D S I G N A L P TM R O C E S S I N G Military Semiconductors Selection Guide 2004-2005 Mil Sel Guide 04-home-new.qxd 8/11/2004 2:21 PM Page 2 Table of Contents and Introduction Enhanced Plastic

216-CB

Abstract: MICA WAFER snap RIVET msts boitier to3 to220 mica 212-CB cb mica Leistungstransistor
Contextual Info: Montagesätze zur Isolation von Leistungstransistoren Mounting kits for insulation of power transistors MST 3 Art. Nr. Art. No. Art. n° MST 220 Ausführung Version Modele Gehäuse Case Boîtier Lieferumfang MSTS 220 Contents of delivery Matériel livré 1 Glimmerscheibe bzw.

2225 X7R 335

Abstract: m270000
Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

KD 334

Abstract: C0402 CC 0201 K R X5R KC 508 KEMET C0402 CC 0201 K R fd 223 fd 35 k EF 183 C0805C103K5RAC
Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

kc 472

Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

capacitor C0402 50V X7R

Abstract: KEMET C0402 KD 472 M j 182 k 151 transistor C0805C103K5RAC C1210 C1812 m270000 C2220
Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and