M MARKING DIODE Search Results

ERA38

Abstract: irsy
Contextual Info: E R A 38 o.5A Outline Drawings FAST RECOVERY DIODE : Features • iti-a u : Marking S u p e r high speed sw itch in g • f f i ' J 5 m m l i 7 f £ » « ¡A U ltra sm all p a c k a g e . * 7 —□ — K : Ö C o lo r code : W hite Possible fo r 5 m m pitch a u to m a tic insertion

automobile drawings

Abstract: ERA17 a39 diode jv marking diode marking A39
Contextual Info: ERA17I1 .OA : Outline Drawings G E N E R A L U SE RECTIFIER DIODE • # € : ■ Features • flg'J'M&fclfc, bm m & y ? § A # 1'«TSi Ultra small package, possible for 5mm pitch automatic insertion. • S im S tt High reliability lil/jv : Marking ESD-proof

Contextual Info: Schottky Barrier Diode Twin Diode m wm o u tlin e D F 1 5 N C 15 150 V 15A Feature • SMD • SMD •S lR = 0 .3 m A • Low lR=0.3mA • ÎÂ S ÏË ÎS Ë C L IC < 11 • Resistance for thermal run-away M ain Use • Switching Regulator • DC/DC Converter

Contextual Info: 7 * '> - w u x /w * m s Power-Clamper Axial Device Zener Diodes with Fast Recovery Diode • f t M U ! OUTLINE ST02D-82 Unit: mm Weight 0.38 g Package : AX078 82V 200W X r> « it 27.5 27.5 j 4.0 Feature G> ■ Power Zener Diodes with FRD ■ Axial Package

Contextual Info: Schottky Barrier Diode Diode Module mtm D120SC6M OUTLINE 60 V 120A Feature • High lo Rating -Module-PKG • f i Vf • Low V f • 8 j c jÿ 'J '£ U • Small 9 je • X M Z 'f y f - y iM M • High Power Switching Regulator • DC/DC z • DC/DC Converter

diode marking code I5

Contextual Info: Super Fast Recovery Diode Single Diode mtm D30L60 OUTLINE Unit I mm Weight 43g Typ Package I ITO-3P 15 600V 30A Date code 5.5 N Feature • ® M ± FRD • High Voltage Super FRD • Low Noise • trr=150ns Type No. • trr= 150ns toft Polarity • Full Molded

Contextual Info: Super Fast Recovery Diode Twin Diode l ^ DF20LC30 t l l O U T L IN E U nit‘mm Package : STO -220 Weight lJ>g Typ 102 300V 20A Feature • SMD • SM D • e y 'f x • Low Noise • trr=30ns • trr-3 0 n s 4.7 Main Use • T . 'f • Switching Regulator

Contextual Info: Schottky Barrier Diode Diode Module m tm OUTLINE D180SC4M 40 V 180A Feature • High lo Rating -Module-PKG • Low V f • Small 9 je • f i Vf • 8 jc jÿ 'J '£ U Main Use • X M Z 'fy f-y iM M • • • • • DC/DC z i y j { - 3 •IC x T .? High Power Switching Regulator

Contextual Info: Super Fast Recovery Diode Twin Diode l ^ t l l O U T L IN E DF1 0 LC 2 0 U 20 0V 10A Feature • SM D • SM D • e y 'f x • L o w N oise • tr r - 3 5 n s • tr r-3 5 n s • T .'f • S w itc h in g R eg u lator Main Use • D C /D C 3 y i{ - 9 • D C /D C C o n v e rte r

Contextual Info: /j'SäüSHn r / u z Power zener Diode mw Small Surface Mount Device Single Zener Diode • f t M U ! OUTLINE ST03-58F1 58V 300W ftft ■ ■ /j\g ü s iv D Feature ■ 1W Class ■ Small SMD ■ Available for automotive use £ V\ 'T ¿5 V For details of outline dimensions, refer to our web site or the

ERD32

Abstract: A124 marking code
Contextual Info: ERD32 3A FAST RECOVERY DIODE * Features IÄ7F : Marking Super high speed switching • 1&VF Low VF A5 - 3 — K Color code : Orange Large current Abridged type • sn High reliability name ŒŒ? 5 7, Voltage class O ;r Mid Lot No. 0-, HBBiMEt ^ Lot No. division mark

toshiba Ta

Abstract: 1SV216
Contextual Info: TOSHIBA 1SV216 1 SV2 1 6 TOSHIBA VARIABLE CAPACITANCE DIODE TV VHF UHF TUNER AFC SILICON EPITAXIAL PLANAR TYPE Unit in mm M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL

WSD521S

Abstract: WSD520S
Contextual Info: WSD520S/521S S u r f a c e M o u n t S c h o tt k v B a r r i e r Diodes SM ALL SIG N A L SC H O T T K Y D IO D ES 200m A M PE R E S 30 VOLTS Feature: *E xtrm e ly High S w itching Speed. *Low Forward Voltage and Low Reverse Current. *H igh Reliability. *S ch ottky B arrier Diodes Encapsulated in a SOD-523 Package

1SV309

Abstract: C25V
Contextual Info: 1SV309 TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV3 0 9 UHF SHF TUNING High Capacitance Ratio : C2V / C25V = 5.7 Typ. : rs = 1.20 (Typ.) Low Series Resistance Excellent C-V Characteristics, and Small Tracking Error Useful for Small Size Tuner

s40w

Abstract: 20DL2C48A 20FL2C48A U20DL2C48A U20FL2C48A S-40W 20fl2c
Contextual Info: TO SHIBA 20DL2C48A,U20DL2C48A,20FL2C48A,U20FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2C48A, U20DL2C48A, 20FL2C48A, U20FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage

HN2D01F

Abstract: lu2b
Contextual Info: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. • +0.2 2.8 - 0.3 +0.2 1.6-0.1 H N 2D01F is composed of 3 independent diodes. • Low Forward Voltage • F a st Reverse Recovery Time : trr = 1.6ns Typ.

1sv128

Contextual Info: TOSHIBA 1SV 128 1 S V 128 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Unit in mm V H F- U H F BAND RF ATTENUATOR APPLICATIONS. • • Small Package Small Total Capei tance : Cx = 0.25pF Typ. M A X IM U M RATINGS (Ta = 25°C) SYMBOL RATING 50 Vr 50 If 125 Tj

1SV276

Abstract: 300E
Contextual Info: 1SV276 TOSHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.0 Typ. Low Series Resistance : rs = 0.220 (Typ.) Small Package 0 ± 0 .0 5 M A X IM U M RATINGS (Ta = 25°C)

1SV329

Abstract: toshiba marking format
Contextual Info: TO SH IBA 1SV329 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV3 2 9 VCO FOR UHF BAND RADIO Unit in mm • High Capacitance Ratio : C1V /C 4V = 2.8 Typ. • Low Series Resistance : rs = 0.55 • ü, (Typ.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)

VRM 12.5

Abstract: 1SV262 C25V SPICE 2G6
Contextual Info: 1SV262 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE 1 SV2 6 2 CATV TUNING • • • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.60 (Typ.) Excellent C-V Characteristics, and Small Tracking Error.

1n6628 jantx

Abstract: JEC 400 1N6626 1N6627 1N6628 1N6629 1N6630 1N6631 t375 1N6630 JANTX
Contextual Info: 1N6626 th ru 1N6631 MicrosemiCorp. f T hp diode e xp erts SANTA ANA, CA SCOTTSDALE, A Z For m ore inform ation cali: ULTRA FAST RECTIFIERS 602 941-6300 .040 +/- .002 DIA. (1.02) Features 1.0 MIN. (25.4). • • • • • • • AXIAL AND SURFACE MOUNT CONFIGURATIONS

1SV269

Abstract: 847E C25V
Contextual Info: 1SV269 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE 1 S V2 6 9 CATV TUNING • • • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V/C25V = 11.5 Typ. Low Series Resistance : rs = 0.550 (Typ.) Excellent C-V Characteristics, and Small Tracking Error.

Contextual Info: DF3A6.8LFE TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type DF3A6.8LFE Diodes for Protecting Against ESD Unit: mm • Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting

5DL2CZ

Abstract: 5DL2CZ47 5DL2CZ47A 5FL2CZ47A 5GL2CZ47A
Contextual Info: TO SHIBA 5DL2CZ47A,5FL2CZ47A,5GL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2CZ47A, 5FL2CZ47A, 5GL2CZ47A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Repetitive Peak Reverse Voltage V r r m = 200, 300, 400V