M F W 17 Search Results

ADC305

Contextual Info: - 82 - ADC305 m iÈ m m r w / w $ /¿PT jti f f t l ) • sm w ± m n v-yv 8 m m w E A ti S ^ m E A * v w a jm m , YREF AJMtH g C B K W l '- r v\[ - f tSlfsB 7l\ - f y j f ' i f • fy m s TO P DE DGND Bit 8 Bit7 6 6 Bit Bit 5 3 Bit4 Bit 3 B it ? 1kj B it 1

Philips PCF 7900

Abstract: BI 170-1-2 PD72256 fdk vco 004 tfk 522 IC HEF 4541 PCF 7900 himax hx DXJR dk737
Contextual Info: M o s jfc ü m ïê MOS Integrateci Circuit M FM , M W P ,L W D f ^ 1 - t { M 7 W 1 2 G F - 5 1 m P L L J l i 6 i è v > i r 1 t ' f I f • £> < ££> ':□ > h P - 7 / iP D 1 7 0 1 2 G F - 0 5 1 Ì^ tì# ^ W P L L |Ì]> ^ '> > - b - y - < 1 f^ F M MW, L W ^ zl

IC-7033

Abstract: diode sg 5 ts 7900f
Contextual Info: C o m p o u n d Field E ffe ct P o w e r T ran sisto r ¿¿PA1 5 2 4 M O S F E T T ’V - f ' T .m nPA1524Ü, 7 f > r?'<4 x tt» >m m & i^ y ^ f if# W t N f - ^ T W U | ^ V - M O S F ETT', 5 V € ^ I C < 7 i * m i£ < , > X >f -y - f M U tlT l'& fz ì ò ,

GaAs FET 15A

Contextual Info: F E T - te m m a a g 3? i fê w ft n m * A • F L M I 2 1 3-8 D Vd s V 15 I DSS(A) 3. 60 5. 40 É : SHF w i B t B * ') - r n t lf f lä R ic Vg s (V) -5 Eth(C/W) 3. 00 3. 50 P t (W)* 42 IM3(dBc) TchCC) 175 ÍÜÍJ38. 5dBm(f=12. 7~13. 2GHz) 4 f S : i f i g A t t i Ä « ® ä ä S GaAs FET.

Contextual Info: - 274 - « f f lä & Ä tiJÄ ffl F E T # - « ai ^ a IS ♦ F LM 5 3 5 9-8 B » ± 3 f f f i i : SHF w m t t i t r m t ! i f t i l S o tB*39<JBm Vos=10V, 5. 3-5. 9GHz : A iü ^ w e ê s GaAs FET. A B S b fto ¡ £ B ; W j o Itm m w iâ o • F L M 5 B B W Â S f f lS K â

M F W 17

Contextual Info: W ideband V H F 1 / 4 wave for LA mounts Complete wideband V H F 1 / 4 wave and Block wideband V H F 1 / 4 wave for LA mounts LA m ounting kit M ODE! F R FD IIF N fY M ODE! FR tU U EN C Y M ODEi FR EQ U ENC Y LA W B Q 150 170 MHz 1 4 WBQ K 150-170 M Hz .A W B O B

bu 2225

Abstract: LMP7701 LMV651 LMV791 LPV511
Contextual Info: .6-7 S S ± & H - I JI 8 * ^ m i i £ nnnw # # m s ^ Ä ^ E VIP50 « ftilS iii& W ifc k ft > iä # « * K ! l* » r illS i • m m m Ä tf ä Ü B » fM J /, M 5 W S iJ B « £ m f t >I 5S f f l I « W ' m j b * i & * t £ * i f c f c « f l i

NEC-MH

Abstract: 2SJ206 ITT DIODE W7 ITT DIODE W7 pt A305
Contextual Info: 7 s— S • S /— h NEC MOS M O S Field E ffect Transistor 2SJ206 P ^ ^ ÌV MOS FE T w-mm m t : m m 2 S J 2 0 6 Ü P f - - r ^ ;H tiiM O S F E T T ',5 V t t ïI * I C < 7 ) f Ü * ^ i s W M m W t f r * ï f â % x >f "/ f - > / K i T t . * M O S F E T iif£«)±T "!§g T “è ,

MAX155

Abstract: MAX156 156AE
Contextual Info: MAX155/156 • m it « æ • W f W m h lh U Â M lt t n r u / m h îh u x t ia M ') • 8 t '» M ' iw W - h - l ß ?TJh" f f ii ) • S r f« ± Ñ ¡l(* M ítM ) a 1 -H t 1& w /\yj *• H |*K • 8 x 8 r ' — ÿ R AMfäüc y h] % ,*V • ¥ * ÎS / 2 l« » )f P

BCR10EM-10

Abstract: TA8250 BCR10AM-4 BCR10AM BCR10AM-8 BCR10AM-12 BCR10AM-10 BCR10EM-6 BCR10EM-8 BCR10EM-4
Contextual Info: 178 - — H B C R 1O AM • * » 0 # ^ o f K í/ c f t iT r W f f i R f f l O if 7 ¿ ï^ f t iïr iiJM (L ffl) W h h 3 > 0 £ 7 ) W i - ^ K f lt & iW .m .) i-fc • i E ■ * * Ä # BCR 1 0 AM -6 B C R 1 0 A M -8 BCR10AM -10 Vd s m 300 400 600 700 800

Dii 1501

Abstract: UM01 2SJ358 TC8011 Diode UM01 LLB DU P1000 diode w94c RFT M-1
Contextual Info: M O S f ë W ï t ë ù m h 7 > y x $ M O S Field Effect T ra n s is to r 2SJ358 MOS FET m m x ' f y ^ > < 7 m 2SJ358ttP51+ ? O U » M O S FETT5, 5 V W ü& IC W tti tl te cfc-5 iâ ii %mA''ôJfÊ4' 7, -f -y ^ T'T o * S n ° p á 5 t - > f i Í A t f ''( g ; < X - f

capacitor 400V 401 k

Abstract: MMW474
Contextual Info: *$5^ X S/KUl7TJb7-f M 3 >7^1* M E T A LLIZE D PO LYESTFR FILM CAPACITORS MMW-HP MMW -HP ^SERIES J ~ x ^/FEA TU RES • M M W -EF '> ' - X < r > W k f c 7 "J • SW S ; J f „ E O m f f ljf c • ¿¿W m • High current application. • Fo r applications w here high frequency, high current

ITT ZPD 4.3

Abstract: ptc KSL sol 4011 be d17012 UPD170 MEC DPS9 NEC CPUii T108 ptc IWFM 20 sfp 459 khz
Contextual Info: zr — $ • v — h NEC ïffS È w o sm m m fê t ¿iPD17012GF-055 M O S In te g ra te d C ircuit m m m v > fm , y ÿ PD17012GF-055(i, 0tM0>FM, MW, L 1 4 ^ 7 KC M O Sv< m w , * 7 W lw - f ÿ P 3 t f S > h P f ë - 7 - f =l~ “ > 7 h n - 7 ? t0 6 4 tf> •

UUA 180

Abstract: GB9119 JB81-59
Contextual Info: x w m m t i í w m i z m i s U Q Z S ^ J i f S î t æ m t m & m & w & f t tt B m m iiiW t ä m m m m , m f f l i f c t e . 5 ;É . i t i . ; è £ . m ?s. Ü iÄ U iT ilk o ± S # /S m m ñm ± z v m u m iü m tL im m m m m u n . rtîhæ . iz m m m m , r t m ^ b r i î â ^ o

TI801

Abstract: 25HB NEC 346J TC-6139 sl 0565 r 2SK773 T108 T150 MT 6139 A
Contextual Info: 7 s— S 7 • S / — h NEC m * = S F ie ld E f f e c t P o w e r T r a n s i s t o r r i x r x N - ^ - W t ' ^ ' ^ - M j i m O S F X 4 Ü ' , ï f t & X -y -f- > T m 2SK773Ü, N-f -v t w i ^ x > ^ > x y > hffi^"o7 - M 0 S F E T T t > & & & {& < , E «

lm 3805

Abstract: MD38XX MD3810
Contextual Info: 2/5/10MHz V/F, F/V Converters M O m W O m W W W C W C W K 'V O W KfrX iW K W iW X frJiW CW iW iX :i-X « » X W « » K W « » X W O « O X O ¡vXvXOXWWOXWWWXWWWXWi' ;v X ^ frM frM W » W W W m fr v.vsy.v.vsvs.oyyyy.vyy.'. :ox •:'>:■»:vyvsvy.vs.*:•:

AN2141

Abstract: AN214 AN2331
Contextual Info: AN2141 A N 2141 Video Camera Luminance Signal P ro cessin g Circuit w & m S 7 cOM&iSv'Uhmm t AN214K1, f f m f i r a s & T 'i - o • * m • AN2141 iJ , <k<nmt £ I f L X ^ 4 o A L C 0S& b \=7 ■■/*> r u w m i b i -y-rm ffi • s v m m x -m ^ t, i& m & w .ti

FA-200

Abstract: ZNE18 ZF12
Contextual Info: Central Mounted F-Modules Single m odules o f the F Series including m a in s/p o w e r m odules NE18 and NE18CTII are available w ith central m ounting. Dim ensional D raw ings • Dimensions in mm [inch] With FG button: hole < 12 mm [.472 inch] V ie w w ith o u t n u ts

731s

Contextual Info: I ^ SC A LE 4 - 1 CSC A C E — ~y - r > W T * « > - -y *? C W H i m - f t > # - i >• > -V , -T" • S9tJkrfi<)-w — -* 4 I' - r u >. : * * # ' ) • » - S ' a. i t . f W , ^ -v - ir I lr Jt -y a* ■W - f K f i* S . v -tr >\r > ^ - 4 -1 ) y *■ r F J M M U )

fq08g

Abstract: FZ 300 R 06 KL 2SM159-200 2SM159-300 2SM159-400 2SM160-300 FR08C FR08D FR08E FR09D
Contextual Info: 170 - — • W B H * * F R 0 8 2 S M 1 5 9 / F R 0 9 ( 2 S M 16 0 ) o tä fö m & Jf} { r œ ^ 7 3 > ït! (F R 0 8 ) Í7 7 7 M S iw w tt (F R 0 9 ) ê£ FR08CÍ2SM159-200) FR09CI.2SM160-200) FR08DÍ2SM159-300Í FR09D(2SM160-300) FR08EÍ2SM159-400)

Contextual Info: ’ EExe 11-Through Terminal Blocks 8 F ront-entry 0 .5 — 4 m m 2 O 550 V ~ , 30 A /r\ \O \ X// | A W G 2 0 - 12 O / F \ W 0 . 5 - 6 m m 2 550 V ~ , 39 A | AW G 20 - 10O /F A W Term inal b lo ck w id th 6.2 m m / 0 .2 4 4 in i ^ 3 9 - 1 0 m m / 0 .3 7 in

hr460

Abstract: 2SK707 2sk707u ASX 12 D transistor TL08 015
Contextual Info: M O S Field E ffe c t P o w e r T r a n s is t o r MOS F E T i i f f l 2SK707Ü, m m m < , N f + ^ . ; i . x > ^ > x / > l ' f f ^ ’', 7 - M 0 S x 4 -y+ > n x a 0 , ¡ü m » x F E T X 't > 4 -y - f - > r m * fM W i : mm s , . 1 6 . 5 MA X . D O D C =1 > ' < — ? l z M M T t o

LLP1005-FH3N3C

Abstract: Wmm05 116 1LJJ QFII IAM-92516 LL1005-FHL56NJ LLP1005-FH10NC LLP1005-FH1N0C MCH155A180JK
Contextual Info: IA M - 9 2 5 1 6 fa 1 .9 G H z T S ia f f iS + f i& K J f l \«m m 5063 Agilent Technologies itm 400MHz SU 3GHz fòjfrfB 'IfÉ fà a, n r f ^ s ^ i ± ^ f n T » &mmmm%sofm, t m ^ 3 M E E « :S J fii2 o o » [j# . W H S M IA « U t£ W jB ^ 5 £ J j| M M ffiB M M fiH B fr ffr A *

pc177c

Abstract: C339G UPC177C c177g pc339c LM339 339G PC177 M339 PC339
Contextual Info: - 23 - /¿PC177 ,^PC339 W lE itm ïïiW y h n .M m 'ï to iR .m = i ' s ^ u - ? x - , CV'Ï>. í. PC 177 l i ü l S I S f f l , ^ PC 339 li- jf â f f l- t? , S - » f ë W l c f i LM 339 op r v ^ 2 S 6 fp S « m Œ « H ” 2V ~36V ± IV — ± 18V (2 « i g )