M 9403 Search Results

Contextual Info: MOTOROLA SC M E M O R Y / A S I C SÖE J> b3L7251 00074^ T35 IM0T3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M x 9 Bit Dynamic Random Access Memory Module MCM94000 MCM9L4000 MCM94030 The M C M 94000 is a 36M dynam ic random access m em ory (DRAM ) m odule

c3163

Abstract: C4723 l 6283 C0803 2CL24
Contextual Info: e W IK f f f THIRD 1 1 T H I S O R A N I N e O I S U M « M . U I 9 F W N J P C 1 I M 1 • r Lfc MW " W B F A S T O m r a m t P n U B s . L I C j u A T . I O M N . w r i M . w a rn » 1 1 » | CM154 » 1 P 2 p MW m | A I REDRAWN REVISIONS mmmmum 1 LLLJkSrl

C4125

Abstract: MC-41256A4-12 MC-41256A4-15 41256a pd41256
Contextual Info: NEC M C -4 1 2 5 6 A 4 2 6 2 ,1 4 4 X 4 -B IT D Y N A M IC NMOS RAM M ODULE NEC Electronics Inc. P R E L IM IN A R Y INFORMATON April 1986 D escriptio n Pin C o n fig u ra tio n T h e M C -4 1 2 5 6 A 4 is a 2 6 2 ,1 4 4 -w o rd b y 4 -b it N M O S d y n a m ic R A M m o d u le , d e s ig n e d to o p e ra te fro m a

schematic diagram 3v to 12v dc buck boost convert

Abstract: desktop computer smps circuit diagram CD54180MC Flyback Transformers SANYO TV 33JA cd54-180mc 12v 6A flyback ns121 transistor smd yw smps troubleshooting
Contextual Info: 19-4670: Rev 2; 1/93 J V \Æ A \J V \ + 12V , 120m A F la sh M e m o ry P ro g ra m m in g S u p p ly The MAX734 is a +12V-output, step-up, DC-DC sw itch­ m ode regulator. It delivers a guaranteed 120mA from a 4 .7 5 V in p u t, a n d is id e a l fo r p ro g ra m m in g fla s h

d41256l

Abstract: ns4150 Nec mc-412
Contextual Info: NEC M C -4 1 2 5 6 A 4 2 6 2 ,1 4 4 X 4 -B IT D Y N A M IC NMOS RAM MODULE NEC Electronics Inc. P R E L IM IN A R Y INFORMATON Apm1986 Pin Configuration Description T h e M C -4 1 2 5 6 A 4 is a 2 6 2 ,1 4 4 -w o rd by 4 -b it N M O S d y n a m ic R A M m o d u le , d e s ig n e d to o p e ra te fro m a

PCMCIA

Contextual Info: Section II. Micrel Power Control Solutions N ow that you know the best w ay to design your P C M C IA p o w er control subsystem, h ere are components designed to m ake your jo b easier. This is a sum m ary o f M icrel products o f special interest to P C M C IA equipm ent makers. F o r full details, including information on other M icrel prod­

l3886

Contextual Info: EFROl 2.54mmFEMALE HEADER, RIGHT ANGLE TYPE P itc h : 2 5 4 m m SPECIFICATION C urrent Rating; 1 Amps Insulation Résistants« 1000 Megohms m ln Contact Resistance: SO m ohm s Max D ielwtrlo Withstanding: AC 500 V Opcrdting Tem perature: -4 0 * C to +106* C

Contextual Info: N E C E L E C TR ON I CS INC Tfl fci457S2S OOlESlfi T | \TfTCl T MC-411000A1 1,048,576 x 1-BIT d y n a m ic n m o s r a m m o d u le NEC Electronics Inc. PRELIM INARY INFORMATION April 1986 Pin Configuration D escription Th e MC-411000A1 is a 1,048,576-word by 1-bit N M O S

54F10

Abstract: 74F10 E28A
Contextual Info: April 1989 9403A First-In First-Out FIFO Buffer Memory General Description Features The 9403A is an expandable fa ll-through type high-speed First-In First-O ut (FIFO) B utter M em ory optim ized fo r high­ speed disk or tape co ntrollers and com m unication buffer

irfp 540

Contextual Info: April 1989 9403A First-In First-Out FIFO Buffer Memory General Description Features The 9403A is an expandable fa ll-through type high-speed First-In First-O ut (FIFO) B utter M em ory optim ized fo r high­ speed disk or tape co ntrollers and com m unication buffer

lm 7803

Abstract: C1053 C4873 4683
Contextual Info: I 8 « m m « m a c i n t h ir d w a i T H IS PM M 1H 6 I S U W . 1 X P , I REVISIONS WELCASBP FOR PUBLICATION 54 f a OKTE I M O luk REACT 1— 5 t 2— « PER PR CH 92-35 I I*» 1 . MATERIALt CONNECTOR- NYLON UL94V-2 C0RANGE3. CONTACTS- 0 . 3 0 C .012J THIC COPPER ALLOY

Housing 6.3x0.8

Contextual Info: -H h— 4.20 SEZIONE C-C DA USARSI CON TERMINALE 940 30-4080 TO B E USED M TH TERMINALS 94030-4060 CARATTERISTICHE TECNICHE SEC. PS 94518-006 TECHNICAL CHARACTERISTICS A $ /m CA TED IN P S 945W -006 MATERIALE: NYLON 6.6 V2 NATURALE GWT 650 °C MATERIAL: NYLON 6.6 V2 NATURAL (&VT 350 °CJ

vmic 1111

Abstract: vmic 2210 925486-1 VMIVME-3417A VMIVME-2210 VMIC-2210 RP66 22-COMM vexta RP45
Contextual Info: VMIVME-345X FAMILY MANUAL INSTRUCTION MANUAL D O C U M EN T NO. 500-003450-000 E Revised July 13, 1995 VME M IC R O S YS TE M S IN TE R N A TIO N A L C O R P O R A TIO N 12090 SOUTH M E M O R IA L P A R K W A Y H U N TSVILLE. A L 35803-3308 205 880-0444 FAX: (205) 882-0859

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 4M x 9 Bit Dynamic Random Access Memory Module MCM94000 MCM9L4000 MCM94030 The M C M 94000 is a 36M dynam ic random access m em ory DRAM module organized as 4,194,304 x 9 bits. The module is a 30-lead single-in-line mem ory

9403APC

Abstract: MS-011 N24E irf 425
Contextual Info: s e m ic o n d u c t o r _ — il ,„ „ „ R e v is e d J u n e 1 9 9 9 9403A A p ril 1 9 8 9 FAIRCHILD General Description T h e 9 4 0 3 A h a s 3 -S T A T E o u tp u ts w h ic h p ro v id e a d d e d v e r ­ s a tility a n d is fu lly c o m p a tib le w ith all T T L fa m ilie s .

tm-1017

Abstract: TM1017 UT63M125BB 5962-8864401UA qml-38535 UT63M125BBC UT63M125CBC UT63M125BBA UT63M107 UT63M125
Contextual Info: REVISIONS LTR DATE YR-MO-DA DESCRIPTION Changes in accordance with NOR 5962-R119-93 Changes in accordance with NOR 5962-R122-94 Add device class level V. Update boilerplate APPROVED M. L. Poelking M. L. Poelking M. L. Poelking 93-04-12 94-03-03 97-06-06

424256

Abstract: nec 424256 upd42256 424256 memory JRC 062 062 JRC 42256 41256 dram NEC 421000 mC 421000
Contextual Info: SEC M C -42512A 36, -424512A 36 524,288 X 36-B it D ynam ic CM OS RAM Module NEC Electronics Inc. Prelim inary Information A p ril 1992 Description Pin Configuration T h e M C -4 2 5 1 2 A 3 6 a n d th e M C -4 2 4 5 1 2 A 3 6 a re d y n a m ic RAM m o d u le s o rg a n iz e d as 5 2 4 ,2 8 8 w o rd s by 3 6 bits

mpc5023

Abstract: Oa05 MPC5201 HPC5020 Oa203 OA206 OA202 NEC bidirectional zener diodes OA03A OP 7241
Contextual Info: MW 3 1993 111 t V ANALOG MASTER BIPOLAR LINEAR ARRAYS c h s , v -c h s , m -c h s Series - NEC Electronics Inc. March 1993 Description Figure 1. Typical Analog Master Die NEC's Analog M aster fam ilies CHS, V-CHS, M-CHS Series are bipolar linear arrays for developing analog

Contextual Info: fRevised ^ M ^Mo oo ay 1999 EMICONDUCTGRTM General Description Features The 74F 4 03 A is an expandable fall-through type high­ speed First-In First-O ut FIFO Buffer M em ory optim ized for high-speed d isk or tape controllers and com m unication buffer applications. It is organized as 16-words by 4-bits

F483

Abstract: f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637
Contextual Info: SEC V CMOS-5R 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIMINARY January 1990 Description Figure 1. Package Photo N EC 's C M O S -5R fa m ily com bines preconfigured static RAM blocks w ith a standard gate array architecture. By integrating m em ory and gate array logic on a single IC, the

Contextual Info: m e i i w s¿ NEC NEC Electronics Inc. MC-422000AA40 2,097,152 x 40-Bit Dynamic CMOS RAM Module Preliminary Information August 1992 Description Pin Configuration T he M C-422000AA40 is a fa s t-p a g e dynam ic RAM m od­ ule organized as 2,097,152 words by 40 bits and de­

ABB CONTACTOR EH 250

Abstract: ABB CONTACTOR EH 160 ABB CONTACTOR EH 260 abb CA7-01 IEC 60947-2 ABB ABB CONTACTOR EH 100 ABB EH 1200 CAL7-11 EHDB110 ABB EH 250
Contextual Info: Drive Contactors Type BHD & EHDB AC 1012 ABB Control Inc. Drive contactors Type BHD & EHDB s! ent l & m e v a pro lectric nce m I e ith B ura EHD reased al end pole w s g c g c • In chani brakin t ratin e n m amic re cur n d y e D • eas incr Description

MEW19

Contextual Info: NHI-1540 TABLE I: Electrical Specifications P a ra m e te r C ondition Sym bol M in T yp M ax Units POW ER SUPPLY Vcc 4.5 5.5 V REQUIREM ENTS +V 11.4 12.6 V 12.6 V TXVOC V SUPPLY CURRENT V cc=5.0V, +V=12.0V, total hybrid Icc 25 mA +V SUPPLY CURRENT Vcc=5.0V, +V=12.0V, each channel

26v12h

Abstract: pal22v10 palce 18 PALCE26V12H-20
Contextual Info: a PALCE26V12H-20/25 28-Pin EE CMOS Versatile PAL Device •D > I” DISTINCTIVE CHARACTERISTICS m 28-pin versatile P A L ® program m able logic device archi­ tecture E lectrica lly erasable C M OS te ch n olo gy provides half p ow e r only 105 mA a t high speed (20 ns propagation