M 675 F Search Results

Contextual Info: Ferrite Bead Chip m iniR eel Impedence Maximum Order @100MHz Current Number l 0805 Si?:e 100-110 260 120Q 6000 1206 Size 260-310 500-620 700 6000 1210 Size 520 600 1806 Si:ie 800-900 1500 1812 Size 700 1200 1250 j 600mA 675-°n 250 pc. 600mA 675-026 300mA 675-120

transistor BD 677

Abstract: BD 675 BD675 677d
Contextual Info: ES C T> m ÔEBSbOS 00043^5 b H S I E 6 NPN Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF Î5C °*395 T-33-29 ~ BD 675 BD 677 D BD 679 Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington

NPN Transistor 2N3055

Abstract: transistor 2N3055 2N3055 J 2N3055 transistor k 525
Contextual Info: Silicon NPN Transistor 2N3055 Dim. Inches Minimum Pin 1 — Base Pin 2 — E m itte r Pin 3 — Collector A B C D E F G H J K L M M illim eter Maximum Minimum _ .250 .435 .038 1.177 .655 .420 - .151 .205 - .875 .450 -.043 1.197 .675 .440 .525

Contextual Info: M a n A M P com pany Logarithmic Amplifiers Space Qualified LA-5XX Series V2.00 Electrical Specifications P art# LA-514 Part# LA-528 Frequency Range 130-170 MHz Frequency Range 675-825 MHz Input Dynamic Range 0 to -70 dBm Input Dynamic Range -65 to 0 dBm Video Output

CRBV55CL-0575-0675

Contextual Info: RedBox M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP MAX UNITS 575 MHz 4.7 VDC Lower Frequency: Upper Frequency: 675 Tuning Voltage: 0.3 Supply Voltage: 4.75 5.0 5.25 VDC +2.5 +5.0 dBm 15 16 24 mA Output Power: Supply Current:

ST6060

Abstract: ST60100 ST6020 ST6040 ST6080
Contextual Info: Silicon Dual Power Rectifier ST6020 - ST60100 i ri Dim. Inches M illim e te r Minimum Baseplate A=Common Anode uI Baseplate Common Cathode oM I i Wo Baseplate D=Doubler Maximum Minimum _ A B C D E F G H J K L M .875 .450 -.063 1.197 .675 .440 .525 .161

Contextual Info: FCU900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 mΩ Description Features • 675 V @ TJ = 150oC SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

Contextual Info: 2N3055A m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055A is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T03 U 4J MAXIMUM RATINGS 7.0 A VCE p 1 DISS T 60 V .65 5 -675 115 W @ T c = 25°C -65 °C to +200 °C "^"sTG

2N5954

Abstract: M9192 2N5955
Contextual Info: Power Transistors File Num ber 2N5954, 2N5955, 2N5956 675 HARR IS S E M I C O N D SE CT OR 27E D 4302271 OGl'nO? T Silicon P-N-P Medium-Power T ransistors 7 «HAS " - 3 3 ' TERMINAL DESIGNATIONS G eneral-Purpose Types for Sw itching Applications Features:

5U4G

Abstract: Scans-0017520 RECTIFIER GI 6a8g oscillator
Contextual Info: m am Replacement Type TYPE 5Z3 U.X. BASE FULL-W AVE RECTIFIER CHARACTERISTICS Filam ent V o lta g e 5.0 volts Filam ent C u r r e n t 3.0 am p. m ax. P eak In v e rse V o ltage . 1,550 v o lts Peak C u r r e n t pe r A n o d e 675 m A m ax. R .M .S. In p u t pe r A n o d e

Contextual Info: Jack Dust Cap Terminations ' OSSM JACK ACROSS F L A 'S m i Fig. 1 “ '1 -d r- 62 OIA WAX !' -— 675— J 17.1mm Fig. 2 Fig. 3 B E A D C H A IN 2 ' LO NG (50 8m m ] 39 DIA MAX (9,9mm) ' f . Fig. 5 Fig. 4 Type 0SM (SMA) 0SSM (SSMA) Type N TNC BNC 130 D IA

relay f

Contextual Info: REV. 0 D C O 17597 COIL: 9 25 C RESISTANCE 2 6.5 VOC NOMINAL VOLTAGE MUST OPERATE C U S T O M E R DATA SHEET 675 O H M S ±I0X _ _ 13.0 VDC . 1.5 VOC MUST RELEASE ENVIRONMENT: VIBRATION _ 10 SHOCK 00 _ Hz TO 2000 Hz - 9 *• -65 _ °C TO TEMPERATURE NOTES: _

minato 1890A

Contextual Info: • DESCRIPTION The MB90670/675 series have been developed as a general-purpose version of the F2M C*M 6L family consisting of proprietary 16-bit, single-chip microcontrollers. These general-purpose devices are designed for applications that require high-speed real-time processing suitable for process control in a wide variety of industrial

stk 496

Abstract: stk 496 -2 6.35mm jack 1/SCHEMA stk 496
Contextual Info: .400 10.16mm]• OSM JACK r/- H .312 HEX. (7, 9mm IhS CRT .410 r ° S S M JA CK (10.’41mm)V' rN T Y P E \ JACK ¥ *W .235 I (5.99mm)_♦! ,2SSJ L (5.96mm) .62 OIA. MAX. (15.7mm) .250 HEX. STK. (6.35mm) Fig. 1 (14.3mm) ACROSS FLATS u . , 675— - Fig. 2

bf311

Abstract: BF494 BF253 BF595 BF200 transistor BF271 BF115 BF153 BF158 BF184
Contextual Info: TYPE NO. P O L A R IT Y RF-1F High Frequency Transistors M A X IM U M R A T IN G S Pd ImWI 'c Im A V C EO V ) fT min Cob Cre« max max (MHz) (pF) (dB) 230+ 600 300 400 700+ 0.8 • 1.2 1.2 0.4+ • 1.2 • 3.5+ — — 9 3.5 700+ 400 300+ 350 675+ 1.2 •

Contextual Info: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. FT REVISIONS DIST LTR D1 DESCRIPTION R E V IS E D PER ECQ -05-675 DATE DWN APVD 8 /3 0 /0 5 SS SH D D M A T E R IA L : C O U P L IN G

6KD8

Abstract: rs tube
Contextual Info: 6 KD8 TU NO*! OL -TRIODE-PENTODE M IN IA T U R E T Y P E FOR .675 . 750^ U S E AS A C O M B IN E D V H F O S C IL L A T O R A N D M IX E R C O A TE D U N IP O T E N T IA L C A TH O D E A N Y M O U N T IN G P O S IT IO N

Contextual Info: C A T A L O S L IS T IN O MICRO SWITCH k MVKfON Of N n ttN U tR M flW E U K M U T O t COMMIT f u l 3MN6 SWITCH - B A S I C NfCTOVT,RUMOU l*J FEO . M F R . C O D E 91929 2.50 2.125t,0101.062 .1 8 1 o CD .147 D IA " L .147 H O LE- i .675 .1 .162 P L A S T IC B UTTON

Contextual Info: International IjgRlRectifier_ h f a 4 o h f i 2 o HEXFRED u l t r a f a s t , s o f t r e c o v e r y diode Features: Major Ratings and Characteristics Characteristics V 7 A trr 135 ns Q rr 10 nC Ir r m 675 A Vf 3.9 V lF AV — — — — —

TLC271BC

Contextual Info: - 313 - TLC271BC MMM, CMOS rfffJS, 7 W ? V 7 7 k W TEXAS INSTRUMENTS S Ü S S S • * A S tS TLC271BC HBÏAS TLC271BC(MBIAS) TLC271BC(LBIAS) • S f i W E E O f f l : 3 — -16 V ( L = 1 0 / z A, M =105 Xi A, H = 675 i i A ) ♦ 'Z W C Ê ° ffî, US « <

Contextual Info: 500 VOLT TUSONIX 801 M A X IM U M D IA M E T E R D 235/596 290/737 360/9 14 437/12 45 490/12 45 593/15 06 675/17 15 750/1905 800/2032 857/22 23 937/23 80 1 100/27 94 L E A D S P A C IN G (S ) 200/508 250/635 250/635 250/6 35 250/6 35 375/9 52 375/9 52 375/952

1 watt diode

Abstract: rs tube
Contextual Info: 5AS8 TUNO-SOL DIODE PENTODE M IN IA T U R E T Y P E O U T LIN E DRAWING BASING DIAGRAM J E D E C 6-2 J E D E C 9DS . 675 FOR 750~ GENERAL PURPOSE A P P L IC A T IO N S T- 6 j 1 .9 3 8 MAX C O A TE D U N IP O T E N T IA L C A TH O D E A N Y M O U N T IN G PO S ITIO N

6jn8

Abstract: rs tube Scans-0017329
Contextual Info: 19JN8 TUNO-SOL T R IO D E -P E N T O D E M IN IA T U R E T Y P E OUTLINE DRAWING BASING DIAGRAM J E D E C 6 -2 JED EC 9FA .675 1 "” . 7 5 0 FOR A P P L IC A T IO N S IN 2.168 M AX FM O R T V R E C E IV E R S 1 .9 3 0 MAX T-6| C O A T E D U N IP O T E N T IA L C A T H O D E

BD 677

Abstract: BD 675 bd 679 BD NPN transistors bd675 BD677A K 679 M 675 F bd679a darlington bd
Contextual Info: BD 675,A BD 6 7 7 ,A BD 679,A NPN SILICON DARLINGTON TRANSISTORS, EPITAXIAL BASE TR A N S IS TO R S D A R L IN G T O N S IL IC IU M NP N , B A S E E P IT A X IE E Compì, of BD 676, A ; BD 678, A ; BD 680, A PRELIM INARY DATA N O T IC E PR E L IM IN A IR E