M 32 AB TRANSISTOR Search Results

JX5417

Abstract: diode tfk s 220 transistor b 595 PH0810-150 AF100 TFK 03
Contextual Info: yMâcGM Æ a n A M P com pany Wireless Bipolar Power Transistor, 150W 850 - 960 MHz PH0810-150 Features • • • • D esigned for Linear A m plifier A pplications Class AB: -32 dBc Typ 3 rd 1MD at 150 W atts PEP C o m m o n E m itter C o n fig u ratio n

Contextual Info: S G * S 'I H O M S O N SD1476 jï RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS • 55 - 88 MHz . 32 VOLTS . COMMON EMITTER i GOLD METALLIZATION . INTERNAL INPUT MATCHING . CLASS AB PUSH PULL . HIGH SATURATED POWER CAPABILITY - DIFFUSED EMITTER BALLAST

IN5417

Abstract: CAPACITOR JL 1500 AF100
Contextual Info: M an A M P com pany Wireless Bipolar Power Transistor, 100W P 1450-1550 MHz H 1 5 1 6 -1 0 0 Features • • • • • D esigned fo r L inear A m plifier A pplications Class AB: -32 dBc Typ 3 rd IMD at 100 W atts PEP C o m m o n E m itter C o n fig u ratio n

Contextual Info: an A M P com pany Wireless Bipolar Power Transistor, 75W 850 - 960 MHz PH0810-75 V2.00 Features • • • • • D esigned for L inear A m plifier A pplications Class AB: -32 clBc Typ 3rd 1MD at 75 W atts PEP C om m on H m itter C onfig u ratio n In tern al In p u t a n d O u tp u t Im p ed a n ce M atching

CM100TX-24S

Abstract: ak 957 K3029
Contextual Info: CM100TX-24S Six IGBTMOD NX-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 100 Amperes/1200 Volts AE AF AD A E K AC F K Q K J M G K K M K AA AB C K K M DETAIL "A" Z AJ 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

transistor MJ 122

Abstract: CM150TX-24S K3029
Contextual Info: CM150TX-24S Six IGBTMOD NX-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 150 Amperes/1200 Volts AE AF AD A E K AC F K Q K J M G K K M K AA AB C K K M DETAIL "A" Z AJ 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

Contextual Info: CM150TX-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT NX-Series Module 150 Amperes/1200 Volts A E F K Q K J M AE AF AD K G K K K M K AA AB C K M AC DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

CM100TX-24S

Abstract: ak 957 K3029
Contextual Info: CM100TX-24S Six IGBTMOD NX-S Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 100 Amperes/1200 Volts AE AF AD A E K AC F K Q K J M G K K M K AA AB C K K M DETAIL "A" Z AJ 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

CM150TX-24S

Abstract: K3029
Contextual Info: CM150TX-24S Six IGBTMOD NX-S Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 150 Amperes/1200 Volts AE AF AD A E K AC F K Q K J M G K K M K AA AB C K K M DETAIL "A" Z AJ 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

CM75TX-24S

Abstract: K3029
Contextual Info: CM75TX-24S Six IGBTMOD NX-S Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 75 Amperes/1200 Volts AE AF AD A E K AC F K Q K J M G K K M K AA AB C K K M DETAIL "A" Z AJ 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

transistor 1548 b

Abstract: CM150TX-24S
Contextual Info: CM150TX-24S Six IGBTMOD NX-S Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 150 Amperes/1200 Volts AJ AK AG A D K E AH F G J H L K M K M K K AA AB C K L K K K DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

LDB 107

Contextual Info: DATA SHEET NEC SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.

transistor buz 36

Abstract: A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A
Contextual Info: IEMENS AKTIENGESELLSCHAF 03E D • 7 ^ 3*7-0/ ô23StQS QOlSbBS ö « S I E G Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancem ent types in plastic package TO-220 AB Typ Type ^DS max V A

A1306 TRANSISTOR

Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
Contextual Info: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

MMM6029

Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
Contextual Info: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular

transistor dk

Abstract: dk transistor
Contextual Info: SKM 111AR MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions P, Q DK R%+ 8 * 55 /.&)3L45) 5;),4=4)0 Values Units ABB DBB @AKBC IBB X DB 9 ZB GGG [ AKB @ADKC S 1 1 S R% DKBB S <¥ Q 9 <6 DBB 1 <¥V Q 9 <6V IBB 1 SM6 <M <MV SW6 P2Y+ @P5.:C S45/* P5 Q DK @UBC R%

BCX70J

Contextual Info: BEE D • ÔS3h3B0 0Q3.bb?ä ? ISIP. NPN Silicon AF Transistors SIEMENS/ SPCLi SEMICONDS BCW 60 BCX 70 T-3^-17 • • • • • For AF input stages and driver applications High current gain Low coilector-em itter saturation voltage Low noise between 30 Hz and 15 kHz

transistor D40e7

Abstract: D40E5 D40E7 tab ic D40E D40E1 D41E TO 5 pin configuration
Contextual Info: Silicon Power Tab I— >J I &f= Transistors > I r— I D40E “ Color Molded” T he G eneral E lectric D 40E is a brow n, silicone plastic encapsulated, pow er transistor designed for various specific an d gen eral purpose applications, such as: o u tp u t and

D40E5

Abstract: D40D14 tab ic D40D5 D4102 D40D1 D40D2 D40D3 D40D4 D40D7
Contextual Info: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2

Contextual Info: S C S -T H O M S O N S D 1456 T C C 3100 5 7 . RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST

NEM085068-28

Abstract: NEM081
Contextual Info: CLASS AB/C, 860 MHz, 28 VOLT MATCHED TRANSISTOR NEM081568-28 NEM085068-28 NEM085068-28 OUTPUT POWER vs. FREQUENCY FEATURES • HIGH PO W ER A N D HIG H G A IN :f = 860 MHz, Class AB • NEM 081568-28: Po>41 dBm, G p>8 dB • NEM 085068-28: Po>46.2 dBm, G p>6.2 dB

Contextual Info: * M * DISCRETE SEMICONDUCTORS LLE16350X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 October 1992 Philips Semiconductors PHILIPS bbS3T31 003301b ^ P h ilip s S em iconductors P relim inary sp e cifica tio n

BLF369-NXP

Abstract: transistor r8 BLF369 EZ90-25-TP VHF transmitter circuit
Contextual Info: BLF369 Multi-use VHF power LDMOS transistor Rev. 04 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description A general purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz.