M 308 AN Search Results

Contextual Info: 3 Stanford Microdevices Product Description SSW-308 Stanford M icrodevices’ SSW -308 is a high perfom ance Gallium Arsenide Field Effect Transistor M MIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-3 GHz Low Cost G a As MMIC SPDT Switch

transistor bc 238 b

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS • LO W N OISE: BC309 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m ltter Voltage : BC307 : BC 308/309 C ollector-E m ltter Voltage : BC307

fr 309

Abstract: BC307 309 T BC239 BC309
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • LO W NOISE: BC309 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-E m ltter Voltage : BC307 : BC 308/309 C ollector-E m ltter Voltage : BC307

Contextual Info: Stanford Microdevices SSW-308 Product Description Stanford M icrodevices’ SSW -308 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-3 GHz Low Cost GaAs MMIC SPDT Switch

M2701

Abstract: T4318
Contextual Info: INTERCONNECTION SPECIALISTS SERIES 307 s ip 308 sip board to board co nnecto r board to board co nnecto r s n a p ( s o l id ) SERIES 307 SNAP BREAKABLE INSULATOR f ir m i m m i m i m i .100 [2.54] J 37 -0 4 SERIES 308 SOLID SOLID INSULATOR — MATERIAL: ( 1 )

Rs 308n

Abstract: LM208D 308AL 208AH LM308 IR 308H 308d L201 AP IC LM 308
Contextual Info: LM108/208/308 LM108A/208A/308A O perational Amplifiers Description: The 108, 208, 308, 108A, 208A and 308A m onolithic operational am plifiers are functionally, e le c­ trically and p in -fo r-p in equivalents to the National LM108, LM208, LM308, LM108A, LM208A and LM308A.

Contextual Info: Product Description SSW-308 Stanford M icrodevices’ SSW -308 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-3 GHz Low Cost GaAs MMIC SPDT Switch This single-pole, double-throw, reflective switch consum es

Contextual Info: Customer Information Sheet DRAWING N o .: SHEET M 80-4DII005F2-04-308-Q4-308 2 OF 2 I IF IN DOUBT - ASK I I NOT TO SCALE THIRD ANGLE PROJECTION ALL DIMENSIONS IN mm SPECIFICATIONS: MATERIAL: MOU LDI NG: GL ASS F I L L E D PP S, U L 9 4 V - 0 , BLACK SIGNAL CONTACT:

transistor BC 308

Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
Contextual Info: * BC 307 BC 308 BC 309 MPN SILICON TRANSISTOR, EP ITAXIAL PLANAR r RANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L % Preferred device D isp o sitif recommandé 3C 309 and BC 308 transistors are intended or use in audio frequency preamplifier and iriver stages. BC 309 is intended for low

Souriau cross reference

Contextual Info: 8LT Series MIL-DTL-38999 Series I Cross reference list : Part Numbers Souriau and Specifications : NFC 93422 / MIL DTL 38999 Connectors SOURIAU NFC 93422 HE 308 MIL DTL 38999 Serie I Designation 8LT0llBllP/SN 8LT0llFllP/SN HE30800TllllP/SN7 M HE30800TllllP/SN6 M

T BC309

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS . LOW NOISE: BC309 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage : BC307 : BC308/309 C ollector-E m itter Voltage : BC307

WAC14

Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA Product Preview Synchronous Line Buffer: 8K X 8 Bit Fast Static Dual Ported Memory With IEEE Standard 1149.1 Test Access Port and Boundary-Scan JTAG The M C M 62Y 308 is a synchronous, dual ported m em ory organized as 8,192

L6ss

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MCM62Y308 Synchronous Line Buffer: 8K X 8 Bit Fast Static Dual Ported Memory With IEEE Standard 1149.1 Test Access Port and Boundairy-Scan JTAG T h e M C M 62Y 308 is a synchronous, dual ported m em ory organized as 8,192

Contextual Info: MODEL TOS SERIES Tantalum Nitride on Silicon Resistor N etw ork Bussed Circuit SCHEMATICS Operating Tem perature Range -55°C to +125°C Interlead Capacitance <2pF Insulation Resistance 2 1 0,000 M egoh m s Noise, M axim um M IL-S T D -202, M ethod 308 -35dB

Contextual Info: MODEL TOS SERIES Tantalum Nitride on Silicon V.35 Termination Resistor SCHEMATICS ELECTRICAL O perating Tem perature Range -55°C to +125°C Interlead Capacitance <2pF Insulation Resistance a l 0,000 M egohm s N oise, M axim um M IL-ST D -202, M ethod 308

HM 6

Contextual Info: THREE-WAY POWER DIVIDERS M O D ELS D S -117/308 • 1 1-300 M Hz Low Loss — Typically Less Than 0.5 dB Available in Flatpack and Connectorized Versions Guaranteed Specifications4 From -5 5 °C to +85°C Frequency Range Insertion Loss (Less coupling) Isolation

Rs 308n

Abstract: 100k ohms potentiometer switch 308L
Contextual Info: Series 3D8 Potentiometer Description 1 / 2 i n. s q . , . 5 W a t t Series 309 The series 308 and 309 are high-perform ance, low cost potentiom eters. They are also available with S.P.S.T. or S.P.D.T. rotary sw itch m odules, S.P.S.T. m om entary sw itch m odules and/or potentiom eter m odules in

308H fet

Abstract: LM308N 308h LM208D ir 308n LM108AD LM308h
Contextual Info: 108/108A 208/208A 308/308A Precision Operational Amplifiers GENERAL DESCRIPTION DESIGN FEATURES The L M 1 0 8 A /L M 1 0 8 , L M 2 0 8 A /L M 2 0 8 and L M 3 0 8 A /L M 3 0 8 are Super Beta operational am plifiers fabricated on single silicon chips using the planar epitaxial process.

her 308

Contextual Info: A New Lighting Experience • hohe Qualität durch Chip-on-Board Technik • einfache Verbindungstechnik durch das Easy Connect System EasyLED • Leiterplatten zu Leiterplatten Verbindung WU-M-308, WU-M-309 • bleifrei gelötet • in verschiedene Farben erhältlich

Vossloh-Schwabe

Contextual Info: A New Lighting Experience • hohe Qualität durch Chip-on-Board Technik • einfache Verbindungstechnik durch das Easy Connect System EasyLED • Leiterplatten zu Leiterplatten Verbindung WU-M-308, WU-M-309 • bleifrei gelötet • in verschiedene Farben erhältlich

DS-117

Abstract: DS-308 m 308 an
Contextual Info: M a n A M P ,c o m p a n y Three-Way Power Dividers 1 - 300 MHz DS-117/308 V2.00 Features • • • • • • C-8 Low Loss: 0.5 dB Typ. Impedance: 50 Ohms Nom. Power Rating: 1.0 W Max. Internal Load Dissipation: 0.05 W Max. Flatpack and Connectorized Packages

toshiba diode 1A

Abstract: 1SV308 HP4291A
Contextual Info: TO SHIBA 1SV308 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1SV 308 VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package Low Series Resistance Small Total Capacitance : rs = 1.10 Typ. : Or = 0.3pF (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

WU-M-309-SB

Abstract: WU-M-308
Contextual Info: Optoelectronic A New Lighting Experience • hohe Qualität durch Chip-on-Board Technik • einfache Verbindungstechnik durch das Easy Connect System EasyLED • Leiterplatten zu Leiterplatten Verbindung WU-M-308, WU-M-309 • bleifrei gelötet • in verschiedene Farben erhältlich

Contextual Info: MODEL TOS SERIES Tantalum Nitride on Silicon Resistor N etw ork Single Ended SCSI Termination Circuit SCHEMATICS ELECTRICAL Operating Tem perature Range -55°C to +125°C Interlead Capacitance <2pF Insulation R esistance > 10,000 M e go h m s N oise, M axim um M IL-S T D -2 0 2 , M ethod 308