M 208 B1 Search Results

Contextual Info: CRYSTAL AND RELAY SOCKET OPEN FRAME CRYSTAL AND RELAY SOCKET (SOLID FRAME) SERIES 108 INTERCONNECTION SPECIALISTS 208 SERIES 208 SERIES 108 1 300 [7.62] r T-1 .400 [10.16] .016 [0.41] DIA. .022 [0.56] .014 [0.36] OIA.023 [0.59] (8 ) 4 PIN Tjj m 300 [7.62]

000D

Abstract: MB15 MB25 MB35 DC003
Contextual Info: i I8K MB1 5W / 25 W) / 35(W) SERIES - HIGH CURRENT SILICON BRIDGE RECTIFIER v ltü INCORPORATED Features • High Conductivity M etal case Superior therm al design Surge ratings to 400 am peres Term inals solderable per M IL-STD-202, M ethod 208

MACH466-12/14/18

Contextual Info: PRELIMINARY COM’L: -10/12/15 IND:-12/14/18 MACH466/MACHLV466-10/12/15 High-Density EE CMOS Programmable Logic T h e P ro g ra m m a b le L o g ic C o m p a n y F rom A M D DISTINCTIVE CHARACTERISTICS • 208 pins in PQFP ■ 100 MHz fCNT ■ Low power ■ 146 Inputs

GWS mini STD

Abstract: Vantis PRO PROGRAMMING SW MACH466-12 vantis jtag schematic
Contextual Info: PRELIMINARY COM’L: -10/12/15 IND:-12/14/18 MACH466/MACHLV466-10/12/15 High-Density EE CMOS Programmable Logic V A N T I S T h e Program m able Logic Co m pany From AM D DISTINCTIVE CHARACTERISTICS • 208 pins in PQFP 100 MHz fQNT ■ Low power 146 Inputs

HAT2040R

Abstract: HAT2040R-EL-E
Contextual Info: HAT2040R Silicon N Channel Power MOS FET Power Switching REJ03G1168-0600 Previous: ADE-208-565D Rev.6.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 6.2 mΩ typ • Capable of 4 V gate drive • Low drive current • High density mounting Outline

HAT1036R

Abstract: HAT1036R-EL-E
Contextual Info: HAT1036R Silicon P Channel Power MOS FET Power Switching REJ03G1149-0700 Previous: ADE-208-662E Rev.7.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 11 mΩ typ • Capable of –4 V gate drive • Low drive current • High density mounting Outline

EF9367

Contextual Info: ¡Z T ! S G S -T H O M S O N ^ 7 # [i MOS GRAPHIC DISPLAY PROCESSOR GDP • SELECTABLE RESOLUTIONS IN BLACK AND WHITE OR COLOR : VERTICAL RESOLUTION : 525 LINE MONI­ TOR (208 OR 416). 625 LINE MONITOR (256 or 512) HORIZONTAL RESOLUTION : 256, 320*, 384*,

GWS mini STD

Contextual Info: P R E L IM IN A R Y COM ’L: -10/12/15 IND:-12/14/18 MACH466/MACHLV466-10/12/15 High-Density EE CMOS Programmable Logic V A N T I S T h e Program m able Logic Co m pany From AM D DISTINCTIVE CHARACTERISTICS • 208 pins in PQFP 100 MHz fCNT ■ 146 Inputs

242202

Abstract: a1768 a80486dx2 VME 5v 3.3v timing sequence 241618 Intel overdrive
Contextual Info: intei EMBEDDED ln te lD X 2 T M Integrated Floating-Point Unit Speed-Multiplying Technology PROCESSOR Data Bus Parity Generation and Checking 32-Bit RISC Technology Core Boundary Scan JTAG 8-Kbyte Write-Through Cache 3.3V Processor, 50 MHz, 25 MHz CLK — 208-Lead Shrink Quad Flat Pack

HAT2064R-EL-E

Abstract: HAT2064R
Contextual Info: HAT2064R Silicon N Channel Power MOS FET Power Switching REJ03G1175-0900 Previous: ADE-208-930G Rev.9.00 Sep 07, 2005 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 5.0 mΩ typ (at VGS = 10 V)

Contextual Info: • GMH Color G raphic Type GMH20016A 208 Module Dimensions RGB X160 Pixels 1/160 Duty Block Diagram (with CFL backlighting) CN1 : LCD Operation U D 0 -U D 3 CL1-U — ._ oi -* M• n r | ÎC2 I IC3 160 | 152 ^ Y160 X2 • 160 f • 152 f

HAT2070R

Abstract: HAT2070R-EL-E
Contextual Info: HAT2070R Silicon N Channel Power MOS FET Power Switching REJ03G1177-0400 Previous: ADE-208-1226B Rev.4.00 Sep 07, 2005 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 11 mΩ typ (at VGS = 10 V)

HAT2071R-EL-E

Abstract: HAT2071R
Contextual Info: HAT2071R Silicon N Channel Power MOS FET Power Switching REJ03G1178-0400 Previous: ADE-208-1227B Rev.4.00 Sep 07, 2005 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 16 mΩ typ (at VGS = 10 V)

HAT2068R

Abstract: HAT2068R-EL-E
Contextual Info: HAT2068R Silicon N Channel Power MOS FET Power Switching REJ03G1176-0500 Previous: ADE-208-1225C Rev.5.00 Sep 07, 2005 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 7 mΩ typ. (at VGS = 10 V)

HAT2036R

Abstract: HAT2036R-EL-E
Contextual Info: HAT2036R Silicon N Channel Power MOS FET Power Switching REJ03G1166-0600 Previous: ADE-208-665D Rev.6.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 12 mΩ typ • Capable of 4.5 V gate drive • Low drive current • High density mounting • High speed switching

ccd camera module

Abstract: QFP144-P-2020 CCD Linear Image Sensors DIODE MARKING B85 L69A TQFP100-P-1414 b86a T07 marking
Contextual Info: Package Outlines MOS LSI L O U 170 MOS Memories (M H O ) 185 CCD Area/Linear Image Sensors (C C O ) 190 CCD Camera Modules ( C C Q 193 TFT LCD Device (C C D ) 193 Bipolar IC s (B Q D ) 194 Discrete Semiconductors (DQZJ) 208 169 Package Outlines (MOS LSI)

EF9367

Abstract: "ascii character generator" EF9367P 330 e88 schematic MATRIX DISPLAY 1024x512 512x768
Contextual Info: rZ Z A 7# S G S -T H O M S O N 5 MOS GRAPHIC DISPLAY PROCESSOR GDP • SELECTABLE RESOLUTIONS IN BLACK AND WHITE OR COLOR : VERTICAL RESOLUTION : 525 LINE MONI­ TOR (208 OR 416). 625 LINE MONITOR (256 or 512) HORIZONTAL RESOLUTION : 256, 320*, 384*, 512, 640*, 768*, 1024, FULL SCREEN.(*) with

EA208

Abstract: EA-208E EA-224 SC201 SC-201 441-pin BGA 41 hn40 intel 486 processor HC70 hE42
Contextual Info: P R E L I M I N A R Y D A T A S H E E T EA-208 – 6+2 Ports Ethernet Access Controller XpressFlow 2001 Series 10/100 Ethernet Switch Chipset 1. DISTINCTIVE CHARACTERISTICS  8 independent Ethernet Access Ports XPRESSFLOW BUS MANAGEMENT BUS ◊ Two 10/100Mbps Fast Ethernet Ports

TH7863

Abstract: ta 7863 THOMSON-CSF CCD THOMSON-CSF 7863 CCIR
Contextual Info: S'IE D • TQ2bfl 75 0 0 0 0 3 2 3 b ■ x ~ l ' Î - \ rl — 153 — T H O M S O N MIL ET S P A T I A U X 7990 Drive Clock Sequencer & Synchronization 1C For TH 7852, TH 7861, TH 7862A, TH 7882 & TH 7863 Area-Array CCD* Image Sensors 208 & 384 points/line

2D156

Contextual Info: A A D D1 D1/2 D/2 D 156 105 X e/2 104 157 X=A, B OR D VIEW A 3 PLACES VIEW A E/2 BASE METAL B A E1 E ÉÉÉÉ ÇÇÇ ÉÉÉÉ ÇÇÇ ÉÉÉÉ PLATING b1 c c1 b 0.08 E1/2 M C A–B D SECTION A–A 160 PLACES ROTATED 90_ CLOCKWISE 53 208 1 PIN 1 INDEX 52 4X 52 TIPS

Contextual Info: MP1 208/9/10 M icroprocessor Com patible D ouble-Buffered, 12-Bit D igital-to-Analog C onverter FEATURES • L o w e r Data B us F e e d t h r o u g h @ CS = 1 L o w e r Glitch E n e r g y • Stabl e, Mo r e A c c u r a t e S e g m e n t e d D A C A p p r o a c h

mcoe

Contextual Info: MICRON T E C H N O L O G Y IN C 77 DE j t l l l S 4J DDDO' 14 b fl 1 ~ ^ 7. U i J I D ASSii lDfiaV b¿f ^ r f = f iä Ö ffiO IF S D ECRON TECHNOLOGY, INC. m 2805 East Columbia Road Boise, Idaho 83706 TEL. 208 386-3900 T W X 910-970-5973 t (Micron Memory System Support Logic)

PGAA18

Abstract: PA-PGA225-03
Contextual Info: PA-PGA225-03 Map Rev A, 8/1/94 208 186 162 138 114 90 66 42 19 1 1 2 3 4 5 6 7 8 9 10 1112 1314 15 1617 18 A B C D E F G H J K L M N P Q R S T 225 207 185 161 137 113 89 65 41 18 Bottom View-Base PGA A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17

Contextual Info: BNC 50 Ohm 0 - 4 GHz: Specifications and Interface Dimensions ELECTRICAL MECHANICAL Materials: Connector Body: Brass per ASTM B16 1/2 HD Center Contact Male: Brass per ASTM B16 1/2 HD Center Contact Female: Brass, Phosphor Bronze or Beryllium Copper Insulation: Teflon or Delrin