M 087 Search Results

mPD75306

Abstract: mPD75308 75P316 PD75304 PD75306 PD75306GF PD75308 75308B uPD75312B PD75316
Contextual Info: m PD75308 4-BIT SINGLE-CHIP MICROCONTROLLER m PD75312B m PD75316 m PD75316B m PD75P308 m PD75P316 m PD75P316A m PD75P316B 1989 1994 m PD75304 m PD75304B m PD75306 m PD75306B m PD75308 m PD75308B m PD75312 Document No. U11023EJCV0UM00 12th edition (Previous No. IEU-1263)

SK34A

Contextual Info: 3 Amp Schottky Rectifiers SK32A - SK310A CATHODE BAR I D im . In c h e s - , - L l A C I M inim um T A B C D E F | I-B - — D >b M illim e te r M axim um M inim um .068 .157 .100 .194 .078 .030 .087 .177 .110 .228 .115 .060 M axim um N o te s

SK310A

Abstract: SK32A SK33A SK34A SK36A SK38A D0214AC SMA
Contextual Info: 3 Amp Schottky Rectifiers SK32A - SK310A CATHODE BAR I D im . In c h e s - , - L l A C I M inim um T A B C D E F | I-B - — D >b M illim e te r M axim um M inim um .068 .157 .100 .194 .078 .030 .087 .177 .110 .228 .115 .060 M axim um N o te s

lw 293

Abstract: MZ1012 MZ322 MZ320 MZ324 MZ327 MZ330 MZ333 MZ336 MZ339
Contextual Info: « I» |í!|[|ll|ll|l[ [¡iiu m iu iu 1 , m in im u m >>iii[iiiiiitu m in iiH ü iii im m illim i ¡ ¡ i m m illili i m m m iiiii atk’ jgitt M M M M M X » ÏM X # X # Vtw IVtttftt'gtt’ rwtIW n r<rW pf WMMWm » » » s » V 246 N NOco N co N ite N CO C

mz336

Abstract: MZ322 MZ339 MZ320 MZ324 MZ327 MZ330 MZ333 MZ343 MZ406
Contextual Info: « I» |í!|[|ll|ll|l[ [¡iiu m iu iu 1 , m in im u m >>iii[iiiiiitu m in iiH ü iii im m illim i ¡ ¡ i m m illili i m m m iiiii atk’ jgitt M M M M M X » ÏM X # X # Vtw IVtttftt'gtt’ rwtIW n r<rW pf WMMWm » » » s » V 246 N NOco N co N ite N CO C

MZ1014

Abstract: MZ1008 MZ1009 MZ324 MZ1004 MZ322 MZ320 MZ1003 MZ406 MZ343
Contextual Info: « I» |í!|[|ll|ll|l[ [¡iiu m iu iu 1 , m in im u m >>iii[iiiiiitu m in iiH ü iii im m illim i ¡ ¡ i m m illili i m m m iiiii atk’ jgitt M M M M M X » ÏM X # X # Vtw IVtttftt'gtt’ rwtIW n r<rW pf WMMWm » » » s » V 246 N NOco N co N ite N CO C

MB90587C

Contextual Info: MB90587C - I FCRI0.0MC5 Udd= 5 m 7 a. U1H/U1L - EU] - _ _ L iU1L ^ h 4.9 - - _ . 7 , b. * — » Unrst. 5 4.8 4.8 m u 4.8 U1H — F ig.a~e - .2 *1 -.3 i 1 -.3 -.1 -.2 -.1 .087 - .2 _ r i i i-* i "i EU3 5 <g-M M - 5 * . *- *- *- *-*

Contextual Info: 3 Amp Schottky Rectifiers SK32B - SK310B CATHODE BAR I D im . In c h e s - , - L l A C I M inim um T A B C D E F | I-B - — D >b I q i H M axim um M inim um .068 .157 .130 .194 .078 .030 .087 .177 .155 .228 .115 .060 M axim um N o te s

MAX7845

Abstract: MAX7645 MX7545 MX7545A MX7545AKCWP MX7545ALCWP MX7545ALN MX7545ALP 33pFl
Contextual Info: 19-0878; Rev 1; 8/96 s v w ïy a j v x CMOS 12-Bit Buffered M ultiplying DACs T he MX7545A and MAX7645, 12-bit C M O S m ultiplying digital-to-analog converters DAC with internal data latches, are im proved versions of the industry stand­ ard MX7545. T h e MX7545A features a 100ns m ax write

Contextual Info: C A T A L O G L IS T IN G 01 MICRO SWITCH IO CNJ emsicir r. _ _ a m o * UJ I- of M iurous-M M cm ii kgoutok to w u r a tc m t, m inois SW ITCH-BASIC f jjì f ED. MFR. CODE 91929 - ' •■■'■!■ ~ r r m ISEI-T m ~ -> ÿ co * m CORROSION RESISTANT TREATED

FST3340

Abstract: FST3345
Contextual Info: 30Amp Schottky Barrier Rectifier FST3340 - FST3345 Dim. Inches Minimum A B C D E F G H J K L M N P Q R M icrosemi Catalog Number R epetitive Peak Reverse Voltage .185 .087 .059 .040 .079 .118 .016 .819 .627 .215 .790 .157 .139 .255 .170 .080 M illim eter Maximum Minimum

MURATA GRM

Contextual Info: CHIPS, M O N O LITH IC C E R A M IC CAPACITORS FEATURES • M iniature size ■ W id e capacitance, T .C ., voltage and tolerance range ■ Indu stry standard sizes ■ 8 mm and 12 m m tape & reel for auto-placem ent Nickel barrier term ination standard highly resistant to m etal m igration.

2SC3632

Abstract: 2SC3632-Z
Contextual Info: Silicon T r a n s is to r s 2SC 3 632,3 632 -Z NPN = U =l > h ^ ra # ^ *y^ ^ ^ ffl iüi O [H jU ifi; t ' t o V c e o = 600 V o x 'f •/ -f > / X t ° - K fIS ton, tf < 0 . 5 n °p H M & M 7 ^ t ? n f c m ' M ï < n m i m z ^ i ' T t t ' m ± m :7 ( n

2SK468

Abstract: IR044 T106
Contextual Info: NEC M m ^ T / Y T X O S F ie ld E f f e c t P o w e r T r a n s is t o r _ 2SK468 N - ^ ^ U ' ^ - M O S F E T n m m N-Channel MOS Field Effect Power Transistor Switching Industrial Use F E T T ', * A M / P A C K A G E DIMENSIONS W N ^ -v ^ ^ m p cV -M O S

izb220-y

Abstract: izb200-y 1ZB220-Y ZB30 1Z150 IZ75 1ZB36 108-020K 12b43 IZB22
Contextual Info: 216 - 292 - 087 3H m m f 87A 87B 87C 87D 87 E 87F 87G 87H 87J 87 K if l 1 .7 7 - M # 2 5 0 2 .* y - K # 2 5 0 ) 3. * '/ - ! • • ( #187) A 3.5MAX 4.3MAX 3 .8 + 0 .2 4.2MAX 7.2MAX 7.5MAX 7,6 MAX 7.8MAX 7.8MAX / 2(r /- K ) (b *D 34MIN 24MIN 1.5MAX 0.25

29lv320be

Abstract: 29LV320TE FPT-48P-M19 FPT-48P-M20 MBM29LV320TE 29lv320t
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20894-1E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT MBM29LV320TE 80/90/10 MBM29LV320BE80/90/10 • DESCRIPTION The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words

DCC015

Abstract: DHA20 DHB08 DHB12 DHB14 DHB16 IR 506H DCC-01 ED-3TV1
Contextual Info: - 292 - 087 3H m m f 87A 87B 87C 87D 87 E 87F 87G 87H 87J 87 K if l 1 .7 7 - M # 2 5 0 2 .* y - K # 2 5 0 ) 3. * '/ - ! • • ( #187) A 3.5MAX 4.3MAX 3 .8 + 0 .2 4.2MAX 7.2MAX 7.5MAX 7,6 MAX 7.8MAX 7.8MAX / 2(r /- K ) (b *D 34MIN 24MIN 1.5MAX 0.25 25.4MIN 25.4MIN

CJ125

Abstract: 110Q03 1FWJ42 IGWJ43 1GWJ42 1GWJ43 2GWJ42 3FWJ42 3FWJ43 5GWJZ47
Contextual Info: CT un - 292 - 087 3H m m f 87A 87B 87C 87D 87 E 87F 87G 87H 87J 87 K if l 1 .7 7 - M # 2 5 0 ) 2 .* y - K # 2 5 0 ) 3. * '/ - ! • • ( #187) A 3.5MAX 4.3MAX 3 .8 + 0 .2 4.2MAX 7.2MAX 7.5MAX 7,6 MAX 7.8MAX 7.8MAX / 2(r /- K ) (b *D 34MIN 24MIN 1.5MAX 0.25

SA611

Abstract: 29DL320
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20896-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL320TF/BF 70/80/10 • DESCRIPTION The MBM29DL320TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M

cs7d

Abstract: cs7u C37A C37S cs7m C37E C37N TY23
Contextual Info: DIGITRON ELECTRONIC CORP R eference \y Sfl4Sb07 0DDD011 fi • DGE 3bE » N o . - S&.Ò1TY23 C37 1 0 5 . »• f : 800 Volts 25 A. RMS Max. 105*0 Max. Case Temperature M A X I M U M A L L O W A B L E R AT IN G S ‘ ■' igiss . C37U C37P C37A 087B C37C C37D

2SC3734

Abstract: odv marking
Contextual Info: NEC Ì ^ Silicon Tran sistor f / \ f 7 2SC3734 n p n i e ¡ u n ì & 9 * ì/ ~ n v W m m & £ 9 iis i; zi v b v ' ^ m j g X ' i ' y * > 7 ' m NPN Silicon Epitaxial Transistor High Frequency Amplifier and Switching »«/FEA TU RES PACKAGE DIMENSIONS U nit : m m

A6p DIODE

Contextual Info: E R C 8 - 0 4 5 A '> 3 SCHOTTKY BARRIER DIODE ’ Features • I& V f Low VF Super high speed sw itch in g . m m m & m Connection Diagram High reliability by planer design. l^ • E lS s I Applications (D High speed pow er sw itch in g . M a xim u m Ratings and Characteristics

MARKing l4T

Abstract: T460 t930 ERA91-02 mat03
Contextual Info: E R A 9 1-02 0 .5A _ • * » - * » : O u tlin e D ra w in g s LOW LOSS SUPER HIGH SPEED RECTIFIER ■ t t * : Features m f r m , 5 m m t '^ m a «m ■ ^ T jv U ltra small package. Marking Possible fo r 5m m pitch a utom atic insertion. t> ? - □ - V : Ê

4497A

Abstract: 4497A 24 pin MAX165 MAX166 MX7575 MX7575JCWN MX7575JP MX7575KCWN MX7575KN MX7575KP
Contextual Info: 19-0876; Rev 1; 5/96 CMOS, ¡ j P - C o m p a t i b l e , 5 i s/ 10(i s, 8- Bi t ADCs The M X7575/M X7576 are easily interfaced to all p o p u ­ lar 8-bit |iPs through standard CS and RD control s ig ­ nals. T hese s ig n a ls control conversion start and data