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XPN1300ANC
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) |
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NX8601BF-AA-AZ
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Renesas Electronics Corporation
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625 nm InGaAsP MQW-DFB Laser Diode COAXIAL Module for OTDR Application |
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NX8350TS33-AZ
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Renesas Electronics Corporation
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271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application |
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NX6342EP-AZ
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Renesas Electronics Corporation
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310 nm AlGaInAs MQW-DFB Laser Diode for 10 Gb/s BASE-LR/LW Application |
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NX8663JB-BC-AZ
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Renesas Electronics Corporation
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650nm InGaAsP MQW-DFB DC-PBH PULSED Laser Diode Module for OTDR Application |
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NX8369TB-AZ
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Renesas Electronics Corporation
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310 nm AlGaInAs MQW-DFB Laser Diode for 10 Gb/s Application |
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