LTRA MARKING Search Results

ultronix ksm

Contextual Info: A COMPANY M O DEL K SM M e ta l Foil R esisto rs OF HHHÜT ULTRONIX Leadless Foil Chip, U ltra Precise and U ltra Stable Offering the best combination of tight tolerance, low temperature coefficient and high speed at competitive pricing, the planar resistors of

Contextual Info: TOSHIBA RN1701 ~RN1706 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1701, RIM1702, RN1703, RN1704, RN1705, RN1706 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in USV (U ltra Super Mini Type with. 5

Contextual Info: TOSHIBA RN2701 ~RN2706 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2701, RN2702, RN2703, RN2704, RN2705, RN2706 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in USV (U ltra Super Mini Type with. 5

Contextual Info: TOSHIBA RN4988 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 • Including Two Devices in US6 (U ltra Super Mini Type

Contextual Info: CRYSTAL CLOCK OSCILLATORS CITIZEN SMD • Ceramic Package CSX-325F SERIES 2000pcs/reel •FEATURES • H igh-density SM D type. • U ltra-light w eight and ultram iniature size. • Low current consum ption. • Suitable for various applications such as

Contextual Info: RN1901,1902,1903 RN1904,1905,1906 RN1901 Unit in mm 2.1±0.1 SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. 1.25 ±0.1 •lEE Including Two Devices in US6 (U ltra Super Mini Type with 6 leads) W ith Built-in Bias Resistors

Contextual Info: TOSHIBA RN4981 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 ±0.1 • Including Two Devices in US6 (U ltra Super Mini Type

Contextual Info: TO SHIBA RN1707-RN1709 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1707, RN1708, RN1709 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AN D DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in USV (U ltra Super Mini Type with 5

Contextual Info: TOSHIBA RN4990 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RMlQOn SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 ±0.1 • Including Two Devices in US6 (U ltra Super Mini Type

20DL2C41A

Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED O SWITCHING TYPE POWER SUPPLY APPLICATION. O CONVERTER & CHOPPER APPLICATION. • • • • Repetitive Peak Reverse Voltage Average Output Rectified C urrent U ltra F ast Reverse-Recovery Time Low Switching Losses and Output

Contextual Info: TOSHIBA RN4984 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 ± 0.1 • Including Two Devices in US6 (U ltra Super Mini Type

Contextual Info: Order this document by MC33460/D MOTOROLA MC33460 MC33461 Under Voltage Detector Series The MC33460 and MC33461 series are u ltra -lo w power CMOS under-voltage detectors with very tight threshold accuracy specifically designed for accurate monitoring of power supplies. The devices are

Contextual Info: TO SH IB A RN4989 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 • Including Two Devices in US6 (U ltra Super Mini Type

Contextual Info: HN3C16FU TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • U nit in mm 2-1 + 0.1 Including Two Devices in US6 U ltra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TO SHIBA RN4983 TOSHIBA TRANPSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RN4983 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT U nit in mm AND DRIVER CIRCUIT APPLICATIONS 2.1 ± 0.1 • Including Two Devices in US6 (U ltra Super Mini Type

Contextual Info: TO SHIBA RN4984 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RN4984 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT U nit in mm AND DRIVER CIRCUIT APPLICATIONS 2.1 ± 0.1 • Including Two Devices in US6 (U ltra Super Mini Type

Contextual Info: MOTOIROILA 0rderthi docum ent SEMICONDUCTOR TECHNICAL DATA by MURP20020CT/D Preliminary Data Sheet M URP20020CT M URP20040CT POWERTAP II U ltra fa s t SWITCHMODE Pow er R ec tifiers Motorola Preferred Devices . . . designed for use in switching power supplies, inverters, and as free

RW69V

Contextual Info: A COMPANY OF MODELS HACW-2, HADW-2, M-51 Oxide & Carbon Film Resistors U ltra High Value, Special Purpose FEATURES • Ultra high values with superior stability and consistent voltage coefficient • Small size • M5-1 hermetically sealed, minimizing effects of moisture

Contextual Info: MT5C2568 883C 32K X 8 SRAM AUSTIN SEMICONDUCTOR, INC. Í-T 7 ~ \ MILITARY SRAM 32Kx 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883, Class B • R adiation tolerant consult factory FEATURES • • • • • • U ltra h igh speed 12,15 ns

marking J3U

Contextual Info: RN4901 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm ü.l±U.l .1.25 Jr 0.1 • Including Two Devices in US6 (U ltra Super Mini Type with 6

Contextual Info: TDSONIX SERIES 513 VAR!-Thin 100 WVdc CERAMIC TRIMMERS U ltra m in ia tu re Outstanding Features • Only .196"/4.98mm diameter • Monolithic Rotor design offers opti­ x ,080'72.03mm high mum stability for higher capacitance ranges. Eliminates need to use un­

Contextual Info: UXA 0204 UXB 0207 Metal Film Resistive Layer 164 Leaded R esistor Products U ltra P re cisio n Protective Lacquer BEYSCHLAG Catalogue 1999 Leaded Resistor P roducts ÌJ UXA / UXB Ultra Precision • Superior Thin Film Technology • Exceptional Low TC: 0 2 . 10 ppm/K

Contextual Info: TWR A-Series www.murata-ps.com 12-15W, Triple Output DC-DC Converters Featurinng Mura Featuring Murata ata Pow Power wer Solut Solutions' tions' uultra-wide, ltra-wiide, 18-72V, in input voltage range, this this Family Fam mily of A-Series, A-Seriess, TWR triple-output

Contextual Info: TOSHIBA TENTATIVE 1SV306 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 3 0 6 VCO FOR UHF BAND RADIO Small Package U ltra Low Series Resistance : r5 = 0 .2 0 0 Typ. MAXIMUM KÄliNüS i i a = 2b°Lj SYMBOL CHARACTERISTIC Reverse Voltage