LTA 703 S Search Results

sot 23 transistor 70.2

Abstract: LTA 702 N k/702 P transistor
Contextual Info: S A MS U N G SEMICONDUCTOR INC 14ÉD 1 7 ei b 4 : m 2 0007704 S NpN EPITAXIAL M JE700/701/702/703 SILICON DARLINGTON TRANSISTOR T ~ ? :r - 3 HIGH DC CURRENT GAIN MIN hFE—750 @ lc s - 1 .5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS

QPB704

Contextual Info: EO REFLECTIVE OBJECT SENSORS OPTOELECTRONICS OPB703/OPB704/QPB705 .420 10.67 — Th e O P B 703, O P B 704, and O P B 705 consist of an -.3 2 8 (8.33) infrared em itting diode and an NPN silicon .025 (0.64), II phototransistor m ounted side by side on a converging

LTA 702 NE

Abstract: LTA 702 N lm 703 op amp ac701k LTA 703s 703JP LTA 703 S LTA 702
Contextual Info: BURR - BROW N [ DAC701 DAC702 DAC703 ¿ ^ 3 ] Monolithic 16-Bit DIGITAL-TO-ANALOG CONVERTERS FEATURES • MONOTONIC at 15 bits OVER FULL SPECIFICATION TEMPERATURE RANGE VOUT AND Iout MODELS HIGH ACCURACY: Linearity Error ±0.0015% of FSR max Differential Linearity Error ±0.003% of FSR

LTA 703 S

Abstract: TA31002P TA31001P TA31002AP LTA 703
Contextual Info: TONE RINGER ICs TONE RINGER FOR TELEPHONE SET FEATURES • C u rre n t c o n s u m p tio n is sm all, a t n o -lo a d • Package is com pact. (DIP -8 pin) • O scilla tio n fre q u e n c y is va riab le . • B u ilt-in th re s h o ld circuits p re v e n t false trig g e r in g d u e to

LTA 703 S

Abstract: a2728
Contextual Info: Elma Electronic Inc. Office: 510.656 0606 Fax 510 656 8008 E-M al: salot@ olm a com Web: www. elms com ELMA LED ’s in Plastic Housing In n o v a tiv e in E le c tro n ic s T e c h n ic a l D ata H o u sin g M aterial Therrroplast,<7>*ermcpt3Stic A m b o n i Tem perature

Contextual Info: HERMETICALLY SEALED METALLIZED POLYCARBONATE CAPACITORS SPECIFICATIONS TYPE 41 MPC DIELECTRIC WITHSTANDING VOLTAGE RATINGS AND DIMENSIONS 2 0 0 % o f ra te d v o lta g e a p p lie d th ro u g h a m inim um lim itin g re s is ta n c e o f 100 O h m s /V o lt. D u ra tio n o f v o lta g e s tre s s sh all b e 15 s e c o n d s m in im u m

mg75n2ys

Abstract: LTA 703 S MG75N2YS1 MG75N2 MG75N2Y
Contextual Info: MG75N2YS1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in iran MOTOR CONTROL APPLICATIONS. High Input Impedance tf=l.O u s Max. High Speed trr=0-5|Js(Max. ) . Enahncement-Mode . Includes a Complete Half Bride in One Package.

2SD1324

Abstract: lmt zener
Contextual Info: Power Transistors 2SD1324 2SD1324 Package Dimensions L'mt mm 4 4m a\ 10.2max S ilicon NPN Triple-D iffused Planar Darlington Type 2 9ma\ Medium Speed Power Switching • Features 03 1 * 0 1 • 3 0 V Z e n e r d io d e b u ilt-in b e t w e e n C a n d B • V e ry sm a ll flu c tu a tio n in b r e a k d o w n v o lta g e s

Contextual Info: EO REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRC1113 PACKAGE DIMENSIONS .420 1 0 .6 7 - DESCRIPTION - .3 2 8 (8.33) .062 R NOM .226 (5.74) 1 150 (3.81) NOM POINT OF OPTIMUM RESPONSE .150(3.81) MIN f .373 (9.47) I FEATURES Phototransistor output High Sensitivity

C 1114 transistor

Contextual Info: FiS REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1113/1114 PACKAGE DIMENSIONS .4 2 0 1 0 .6 7 -J -4 - DESCRIPTIO N Th e QRB1113/1114 consists of an infrared emitting diode -.3 2 8 (8 .3 3 ) a and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.

Contextual Info: EQ REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1133/1134 PACKAGE DIMENSIONS DESCRIPTION : .420 10.67 — — .328 (8.33) (A) (K) SHRINK TUBING OVER SOLDER JOINT T (E). (C)r J 150 (3.81) NOM POINT OF OPTIMUM RESPONSE 24.0 (609.60) MIN #26 AWG .703(17.86)

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

bux23

Contextual Info: • 7 ^ 5 ^ 5 3 7 P O S A I S 7 ■ 5 S G S -T H O M S O N lailllBiQglLllETfBQHniES_ BUX23 S G S-THOMSON 3QE D NPN SILICON TRANSISTOR D E S C R IP T IO N High speed, high current, high power NPN transis­ tor intended for use in switching and amplifier appli­

LTA 703 S

Abstract: lm 704
Contextual Info: TO SH IB A TPS703,TPS704 TOSHIBA PHOTO DIODE T• P■ < w ;r 7m n 3 V g SILICON PIN Tm mP < wèêf ; 7m r^ u ri d ■ SILICON PIN PHOTO DIODE FOR REMOTE CONTROL U nit in mm VARIOUS KINDS OF REMOTE CONTROL SYSTEMS 7.0 ± 0.2 SMOKE SENSOR OPTICAL COMMUNICATION

Contextual Info: REFLECTIVE OBJECT SENSORS OrrOELECTRONICS OPB703W/OPB704W/OPB7Q5W PACKAGE DIMENSIONS — .420 10.67 — .328 (8.33) .062 (1.57) R NOM (El, (C)r .J I 4.5(114.30) DESCRIPTION The OPB7Û3W, OPB704W, and OPB705W consist of an infrared emitting diode and an NPN silicon

C70r

Abstract: IT2101
Contextual Info: MITSUBISHI TRANSISTOR MODULES \ QM75TF-HB | —mmm^ HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM D im e n s io n s in m m 102 ± 0.3 4-$5.5 7-M 4

MC6800 pin diagram

Abstract: MC6802 22202 pin and software compatible with MC6800 MD46802AC MD46802AD MD46802AE MITEL 24 PIN PLASTIC DIP D2131
Contextual Info: M IT E L ISO CMOS MD4680S 8 B it M icroprocessor Technical D ata Advanced Information Features F E B . 79 • Standby power dissipation 10/xW Va' cvss Reset 140 2 1 FÜR EXtal |3 9 1 • Single supply • Operating voltage range 3V to 7V 3 1 MR Xtal 138

Contextual Info: Fy / m XR-T7295 .the analog plus company April 1996-1 DS3 / SONET STS-1 Integrated Line Receiver GENERAL DESCRIPTION The X R -T 7295 D S 3/S O N E T STS-1 integ rated line receiver is a fully integrated receive interface that ter­ m inates a b ip o la r DS3 44.736 M BPS or SO N ET

1767dp

Abstract: LTA 703 S
Contextual Info: TDE1767,A TDE1787,A SGS-TUOMSON R Æ O g ^ (ô [E J (g ¥ ^ (Q « S INTERFACE CIRCUIT (RELAY AND LAMP-DRIVER) OPEN GROUND PROTECTION HIGH OUTPUT CURRENT ADJUSTABLE SHORT-CIRCUIT PROTECTION INTERNALTHERM AL PROTECTION WITH EX­ TERNAL RESET LARGE SUPPLY VOLTAGE RANGE

Contextual Info: DATA SHEET PHOTOCOUPLER PS2703-1 ,PS2703-2,PS2703-4 HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE TYPE SOP MULTI PHOTOCOUPLER nepoc series DESCRIPTION The PS2703-1, PS2703-2, PS2703-4 are optically coupled Isolators containing a GaAs light emitting diode and an

Contextual Info: SIEMENS Intelligent 4-A Low-Side Switch TLE 4224 P re lim in a ry Data SP T-IC F eatures • S ingle low -side sw itch, 4 A • L o w -O N -re sistan ce typ. 0.25 £2 • Pow er lim itation • O ve rte m p era tu re shutdow n • O ve rlo a d shutdow n

AMPLIFIER 5W TBA800

Abstract: TBA810AS 10107 fairchild TBA810S equivalent TBAB10AS TBA810 TBA810S TAA630S TBA510 TBA520
Contextual Info: CONSUMER CIRCUIT SELECTION GUIDE BY FUNCTION TV Circuits Function AFT M 3064 Sound IF Amp. Lim. Detector //A 3065 Video Amplifier TBA970 Chroma Processing NTSC AiA746, n A780, M 7 8 1 , /uA787, M 7 8 8 Chroma Processing PAL TAA630S, TBA510, TBA520, TBA540, TBA560C, TBA990

diode sg 89a

Abstract: A1703 MMBD1703A sg 87a A1705 mmbd1701-1705 MMBD1704A MMBD1701 MMBD1701A MMBD1703
Contextual Info: Semiconductor'" MMBD1701/A 1 1703/A 1 1704/A / 1705/A _S_ 85 m h- M ARKING M M BD 1701 M M BD1703 M M BD1704 M M BD1705 SOT-23 85 87 88 89 M M BD 1701A M M BD 1703A M M BD 1704A M M BD 1705A 85A 87A 88A 89A High Conductance Low Leakage Diode Sourced from Proce ss 1T.

RM1S

Abstract: automatic room power control circuit block diagram TBA520 TBA810S TAA630S TBA510 TBA970 iA781 am ssb fm demodulator a3089
Contextual Info: CONSUMER CIRCUIT SELECTION GUIDE BY FUNCTION TV Circuits Function AFT M 3064 Sound IF Amp. Lim. Detector //A 3065 Video Amplifier TBA970 Chroma Processing NTSC AiA746 , n A 780 , M 781 , /uA787 , M 788 Chroma Processing PAL TAA 630 S, TBA 510 , TBA 520 , TBA 540 , TBA 560 C, TBA990