LT232
Abstract: LT-2320 n-channel enhancement mosfet n-channel mosfet SOT-23
Contextual Info: LT2320E N-Channel Enhancement MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The LT2320E is the N-Channel logic enhancement mode power field ● RDS ON =21mΩ@VGS=4.5V effect transistors are produced using high cell density, DMOS trench ● RDS(ON)=25 mΩ@VGS=2.5V
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Original
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LT2320E
LT2320E
300us,
OT-23
LT232
LT-2320
n-channel enhancement mosfet
n-channel mosfet SOT-23
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PDF
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mosfet vgs 5v SOT23
Abstract: LT-2320 LT2320E n-channel enhancement mosfet
Contextual Info: LT2320E N-Channel Enhancement MOSFET, ESD Protection GENERAL DESCRIPTION FEATURES The LT2320E is the N-Channel logic enhancement mode power field ● RDS ON =21mΩ@VGS=4.5V effect transistors are produced using high cell density, DMOS trench ● RDS(ON)=25 mΩ@VGS=2.5V
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Original
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LT2320E
LT2320E
mosfet vgs 5v SOT23
LT-2320
n-channel enhancement mosfet
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PDF
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LT2320E
Abstract: n-channel enhancement mosfet N-Channel Enhancement Mode 25v 55a
Contextual Info: LT2320E N-Channel Enhancement MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The LT2320E is the N-Channel logic enhancement mode power field ● 20V/6.5A, RDS ON =21mΩ@VGS=4.5V field effect transistors are produced using high cell density, DMOS ● 20V/5.5A, RDS(ON)=25 mΩ@VGS=2.5V
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Original
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LT2320E
LT2320E
300us,
OT-23
n-channel enhancement mosfet
N-Channel Enhancement Mode 25v 55a
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PDF
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