LT 332 DIODE Search Results

1N4474

Abstract: 4661N 1N1492 1N44B 1N4460 1N4471 1N4479
Contextual Info: 1N 4460 thru 1N4496 and 1N6485 thru 1N6491 Microisemi Corp. $ The diQite SC O TTSD A LE , A Z ☆JANS* 1.5 WATT G LASS ZEN ER DIODES FEATURES • Microminiature package. • High perform ance characteristics. • Stable operation at temperatures to 200°C.

SE1450

Contextual Info: u t s 5 & # m j ,t » lí|l?ft: 51S03J CÈ.Î5 : [ 755-fl32 79 I 1B /B 3 2 7 B S 5 9 /3 3 2 7 BB6Ü fÉ J t; 0 7 6 3 -8 3 2 7 9 2 0 3 R IíIt S lilffl ' S e n s o rO g p n I I o s z «vwvi i i p o I I o s ü . -com co m SE1450 G a A s Infrared Em ittin g Diode

UPA64H

Abstract: PA64H IRZ 46 T108 diode 476 k upa64 8 pin ic 3773
Contextual Info: NEC m =t=fi\rx Aa Di ode Ar r ay //PA64H i t K 7 K Silicon Epitaxial Diode A rray High Speed Switching aîPA64Hi±, 7 / - SIP ' r - ' J > ) •> K * i i ü ï ü X 'f f l ^ H / P A C K A G E D IM E N S IO N S tc, (U nit : mm) (em?) -y V t„ ¡^ S / F E A T U R E S

p626

Abstract: IC P626 TLP626-1
Contextual Info: TLP626,-2,-4 GaAs IRED a PHOTO-TRANSISTOR PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION Unit in mm T h e T O S H I B A TLP626, -2 and -4 consist of two g a l l i u m ar s e n i d e infreared emitting diodes c onnected in inverse parallel, optic a l l y coupled

HOA1877

Contextual Info: HOA1877 Transmissive Sensor FEATURES • C hoice ol phoblransislor or pholodarling fcn output » Wide operating temperature range - 5 5 'C lo -t-IOO Cj ■ a SO h. (12.7 mm high optical axis position ■ a 375 in.(9.52 m m j slol width iiu m if DESCRIPTION

diode Marking Code b3

Abstract: Zener Diode LT 432 diode b3 diode code b2 Zener Diode B1 9 B1 6 zener marking 222 zener diode diode lt 823 zener diode marking 222 HZM4.3NB1
Contextual Info: ADE-208-130 B Z HZM-N Series Silicon Epitaxial Planar Zener Diode for Stabilizer HITACHI Features Rev. 2 May 1994 Outline • Wide spectrum from 1.9V through 38V of zener voltage provide flexible application. • MPAK Package is suitable for high density

n11a

Abstract: 101S UHP4
Contextual Info: SD3443/5443 Silicon Phototransistor FEATURES • TO-4-6 metal can package ' C hdce ol [Ut window or lensed package • 90r or 18’ rcminalj acceptance angle oplion ' Wide operating temperature range (- 55 'C lo+125'C j ' External base connection for added control

Contextual Info: ykiyjxiyki Quad SPST CMOS Analog Switches Maxim’s MAX332, DG202 and DG212 are normally open, quad single-pole-single-throw SPST analog switches. These CMOS switches can be continuously operated with power supplies ranging from ±4.5V to ±18V. Maxim guarantees that the MAX332 and

lem 732 733

Abstract: lem 731 IRF3303 lem 733 1rf730 IRF330-333 5N40 MTP5N35 733 331 lem* 731
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE I 34b‘ïb74 0 0 5 7 0 ^ □ IRF330-333/IRF730-733 M TM /M TP5N35/5N40 N-Channel Power M O SF ET s, 5.5 A, 350 V/400 V FAIRCHILD A Schlumberger Company Power And Discrete Division — Description TO-204AA TO-220AB IRF330 IRF331

TD62506

Contextual Info: SILICON M O NOLITHIC BIPO LAR D IG ITA L IN TEG RATED CIRCUIT TD62503PA TD62504PA 7CH SINGLE DRIVER : COMMON EMITTER The TD62503PA and TD62504PA are comprised of seven or five NPN transistor arrays. A pplications include relay, hammer, lamp and display LED drivers.

Contextual Info: MG500Q1US1 U nit in mm HIGH PO W ER SW ITCHING APPLIC ATIO N S. M OTOR CON TRO L APPLICATIO N S. • • • • • High Input Impedance High Speed : tf=0.5,us Max. trr = 0.5^s (Max.) Low Saturation Voltage : v CE(sat) = 4.0V (Max.) Enhancement-M ode The Electrodes are Isolated from Case.

diode P6KE

Abstract: 6283A diode PFZ 15A DTZ62 PFZ150A PFZ62 PFZ68 7v5, 6271A PFZ68A
Contextual Info: transient voltage suppressors «TRANSIL» diodes de protection «TRANSIL» Types Unidirec­ tional N N N N N N N N N N N N N N •rm @ V r m Bidirec­ tional 1,5 K W / PFZ62 PFZ 62 A PFZ68 PFZ 68 A PFZ 75 PFZ 75 A PFZ 82 PFZ 82 A PFZ 91 PFZ 91 A PFZ 100 PFZ 100 A

PFZ150A

Abstract: 5KE400A 6276-1N 67 6283 BZW 9V1 PFZ200 DTZ62 PFZ62 PFZ68 Thomson-CSF diodes
Contextual Info: transient voltage suppressors «TRANSIL» diodes de protection «TRANSIL» Types Unidirec­ tional N N N N N N N N N N N N N N •rm @ V rm Bidirec­ tional 1,5 K W / PFZ62 PFZ 62 A PFZ68 PFZ 68 A PFZ 75 PFZ 75 A PFZ 82 PFZ 82 A PFZ 91 PFZ 91 A PFZ 100 PFZ 100 A

machlett x-ray tube

Abstract: machlett P-8835 radar tube B094 Raytheon Company xray tube machlett x-ray 8094 EF120
Contextual Info: The M a c h le t t La b o ra to rie s, Inc. 1063 Hope Street • S ta m fo rd , Conn. 06907 ISSUED 12-68 Tel. 203-348-7511 • T W X 7 1 0 -4 7 4 -1 7 4 4 o € B 1 > H i g h - V o l t a g e Rectifier no DESCRIPTION T he M L -8094/199 is a high-vacuum rectifier tube having

OP593B

Abstract: OP593 OP593A OP593C OP598 OP598A OP598B OP598C
Contextual Info: 0 . OPTEK P ro d u c t B u lle tin O P 593A J u n e 1996 NPN Plastic Silicon Phototransistors Types OP593, OP598 Series .230 5 .8 4 .210 ( 5 .3 3 ) QP593 I 1 .190 ( 4 .0 3 ) . 17B ( 4 .5 2 ) r, V COLLECTOR / MEASUERMENT SURFACE 030 ( 0 .7 6 ) — COLLECTOR-

transistor GR 338

Abstract: BTW58 BTW58-1000R lt 332 diode A 1098 LT BTW58 1200 1300R Transistor sae 103 Gate Turn-Off Thyristors IEC134
Contextual Info: SÔE D PHILIPS INTERNATIONAL 711002b DO S 3 1 E b 2flT H P H I N BTW58 SERIES FAST GATE TURN-OFF THYRISTORS Thyristors in T0-220A B envelopes capable o f being turned both on and o ff via the gate. They are suitable fo r use in high-frequency inverters, resonant power supplies, m otor control, horizontal

cm211

Abstract: OP593 OP593A OP593B OP593C OP598 OP598A OP598B OP598C 11Milli
Contextual Info: .OPIEK Product Bulletin OP593A June 1996 NPN Plastic Silicon Phototransistors Types OP593, OP598 Series • Wide receiving angle • Variety of sensitivity ranges • TO-18 equivalent package style Description The OP593/598 series consist of NPN silicon phototransistors molded in dark

D1985

Contextual Info: y k iy jx iw i Quad SPST CMOS Analog Sw itches _ . The MAX332 and DG202/DG212 are sim ilar to the DG201 and DG211 except fo r inverted co n tro l inputs. A ll devices have g u a ranteed b re a k-b e fo re -m a ke sw itching as well as essentially constant on resistance

marking code KC SMB

Abstract: SMBJ25A marking NX TVS DO-214AA smbj0 SMBJ23 SJ 76 TVS dIODE diode GU do-214aA DIODE UF marking code smb marking mp SMBJ12A
Contextual Info: TAIWAN SEMICONDUCTOR SMBJ SERIES 600 Watts Surface Mount Transient Voltage Suppressor S MB/DO-214A A RoHS COM PLIANCE Features_ «• For su rfa ce m ou n te d a p p lica tio n <■ L o w p ro file p a c k a g e B u ilt-in s tra in r e lie f

Contextual Info: Transient Voltage Suppressors i i .s k e and j e d e c senesi 1500 Watt Peak Power Rating/DQ-201 Industry Type Number - .1 ^ . ^ JEDEC V WM It V br Type @ It Number M IN IM A X See Notes V VDC mADC M AX M AX pA DC V A %/°C See Notes 1.5KE6.8 1N6267

Contextual Info: International tor Rectifier • HEXFET Power MOSFET INTERNATIONAL R E C T I F I E R • • • • • • • 4 6 5 5 4 5 2 0 0 1 4 6 4 6 650 ■ INR ru-y.yio _ IRF9530S b5E D Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated

Contextual Info: Data sheet status Product specification date of issue March 1991 PHILIPS INTERNATIONAL PowerMOS transistor ^ GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a lastic full pack envelope, he device is intended for use in Switched Mode Power Supplies

pj 0266

Abstract: SC5027 RD110P rd100p jb 5531 RD51P SC-62 EIAJ Q A 66 SC-5027B RD12PB RD47P
Contextual Info: Æ W Æ y - f * - K Zener Diodes RD120P RD2.0P RD 2.0P—RD120P ¡ ± ^ § « ^ * '‘1 - * W t ë E l T O : mm K T 't o m i ì ' M ru • ■ / K ic , ' m & ï ï & n g m r - ' t v - 1.5 ±0.1 î /U K m g r - W U S ' J ' ^ l f c L f c t m - C l - . 4#

Contextual Info: TO SH IBA cìGcì755G 005333^ 33T T O S H IB A FIELD EFFECT T R A N S IS T O R 2 S K SILIC O N N C H A N N E L M O S T Y P E tt- M O S II -5 1 6 9 2 INDUSTRIAL APPLICATIONS U nit in mm H IG H S P E E D , H IGH C U R R E N T S W IT C H IN G A P P LIC A T IO N S .