LT 33 DIODE Search Results

LT/SG3527A

Contextual Info: Surface Mount Zener Diodes Data Sheet 225m WATTS SMALL SIGNAL FMBZ5221B S e rie s De s c ription M e c ha nic a l Dim e ns ions 1 3 Cathode Anode . 110 . 060 . 037 3 CATHODE . 115 . 037 . 016 1 3 2 ANODE 1 . 043 . 016 2 . 004 Features: *225mw Power Dissipation

LT/SG3527A

Contextual Info: MMBZ5221B Series Surface Mount Zener Diodes SMALL SIGNAL ZENER DIODES 225m WATTS Features: *225mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.4V to 91V 3 Mechanical Data: 1 *Case : SOT-23 Molded plastic *Terminals: Solderable per MIL-STD-202, Method 208

1N962B

Abstract: 1N986B CD957B CD958B CD959B CD960B CD961B CD962B CD963B CD986B
Contextual Info: • 1N962B THRU 1N986B AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/117 CD957B thru • ZENER DIODE CHIPS CD986B • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,

diode zener 182

Abstract: 1N962B 1N986B CD957B CD958B CD959B CD960B CD961B CD962B CD963B
Contextual Info: • 1N962B THRU 1N986B AVAILABLE IN PER MIL-PRF-19500/117 JANHC AND JANKC CD957B thru • ZENER DIODE CHIPS CD986B • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,

C3289

Abstract: C32S1 c3277
Contextual Info: VARACTOR TUNING DIODES l i l a i i l l P a rt P ro d u c t H ig h lig h ts C a p a c ita n c e a t V „= 4 0 V and f= 1 0 M H z iillllllli! W C3289 7 W C3290 10 W C3291 12 W C3292 15 W C3293 H ig h V o lt a g e F ig u r e o f M a rti at 4 0 V and se M Hz

CDLL5221

Abstract: CDLL5221B CDLL5222B CDLL5223B CDLL5224B CDLL5225B CDLL5226B CDLL5227B CDLL5228B CDLL5229B
Contextual Info: CDLL5221 thru • ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT CDLL5272B • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Power Derating: 10 mW / °C above TEC = +125°C

1N962BUR-1

Abstract: 1N986BUR-1 CDLL957B CDLL958B CDLL959B CDLL960B CDLL961B CDLL962B CDLL986B
Contextual Info: • 1N962BUR-1 thru 1N986BUR-1 AVAILABLE IN PER MIL-PRF-19500/117 JAN, JANTX AND JANTXV 1N962BUR-1 thru 1N986BUR-1 and CDLL957B thru CDLL986B • ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C

CDLL5221

Abstract: CDLL5221B CDLL5222B CDLL5223B CDLL5224B CDLL5225B CDLL5226B CDLL5227B CDLL5228B CDLL5229B
Contextual Info: CDLL5221 thru • ZENER DIODES •LEADLESS PACKAGE FOR SURFACE MOUNT CDLL5272B • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Power Derating: 10 mW / °C above TEC = +125°C

CD5265

Contextual Info: • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD5221B thru • ELECTRICALLY EQUIVALENT TO 1N5221B THRU 1N5272B CD5272B • ZENER DIODE CHIPS • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,

CD5226B

Abstract: 1N5221B 1N5272B CD5221B CD5222B CD5223B CD5224B CD5225B CD5227B CD5228B
Contextual Info: • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD5221B thru • ELECTRICALLY EQUIVALENT TO 1N5221B THRU 1N5272B CD5272B • ZENER DIODE CHIPS • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,

1N962BUR-1

Abstract: 1N986BUR-1 CDLL957B CDLL958B CDLL959B CDLL960B CDLL961B CDLL962B CDLL986B CDLL957
Contextual Info: • 1N962BUR-1 thru 1N986BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/117 1N962BUR-1 thru 1N986BUR-1 and CDLL957B thru CDLL986B • ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C

Contextual Info: CDLL5221 thru • ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT CDLL5272B • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Power Derating: 10 mW / °C above T EC = +125°C

Contextual Info: Zener Diode Chip Series CD957B thru CD986B Available in JANHC and JANKC per MIL-PRF-19500/117 Features • 0.5 Watt capability with proper heat sinking • Electrically equivalent to IN957B thru IN986B • All junctions completely protected with silicon dioxide

TS14

Contextual Info: VOLTAGE MULTIPLIERS INC ~ m T | T 514 fl5 4 ODOÜ114 1 f~ flS 9514854 VOLTAGE MULTIPLIERS 'INC ' 820 0 0 1 1 4 ~ D ’T'—2.3>~"05 ULTRA-FAST RECOVERY HIGH VOLTAGE SILICON DIODES 1500 TO 10000 V 100 TO 250 MA 100 N SEC REVERSE RECOVERY LOW REVERSE LEAKAGE

CD970

Contextual Info: Zener Diode Chip Series CD957B thru CD986B Available in JANHC and JANKC per MIL-PRF-19500/117 Features • 0.5 Watt capability with proper heat sinking • Electrically equivalent to IN957B thru IN986B • All junctions completely protected with silicon dioxide

CD5221B

Abstract: CD5237B
Contextual Info: • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD5221B thru • ELECTRICALLY EQUIVALENT TO 1N5221B THRU 1N5272B CD5272B • ZENER DIODE CHIPS • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,

diode cross reference

Abstract: 1N5472A WC32 VYC3302-WC331 IN4811 IN5476A gln 47 WC32B9-WC3301 IN5446A 1N5470A
Contextual Info: -T-Ol-IJ INTERNATIONAL S E M C O N D l|=|E I • 10003?» OOOOOOM 331 M U S E N VOLTAGE VARIABLE CAPACITANCE TUNING DIODES PRODUCT \ H IG H L IG H T S / V a ry H ig h Q L o w V o lt a g * L ow L a a k a g * C a p a c ita n e * T o ltr a n c * JEDEC Types

IN5221

Contextual Info: Zener Diode Chip Series CD5221B thru CD5272B Features • All junctions completely protected with silicon dioxide • Electrically equvalent to IN5221B thru IN5272B • 0.5 Watt capability with proper heat sinking • Compatible with all wire bonding and die attach

CD5226B

Abstract: IN5221B IN5221 IN5272B CD522
Contextual Info: Zener Diode Chip Series CD5221B thru CD5272B Features • All junctions completely protected with silicon dioxide • Electrically equvalent to IN5221B thru IN5272B • 0.5 Watt capability with proper heat sinking • Compatible with all wire bonding and die attach

Contextual Info: ZENER DIODES, GLASS PACKAGE, LOW CURRENT N om inal Zener Z en er Voltage T e st C u rren t #t z r SO O m W JE D E C P a rt Num ber V, (V 1 ( m A) Maximum Z e n e r Impede nee t. @ I, , ” !! 2 5 mA ( O hm s) Z „ fg 1, (O liiti) Z Suffix i l p i l i m i ii i

gunn diode x band series 45200

Abstract: Al67 Gunn Diode x-band varactor diode 10 GHz gunn diode AL3501 406X1 AL-35A10 Gunn Diode e band AL-62101
Contextual Info: AL-3 5100 S E R IE S 30 V o lt D K x rt* T h e AL-35100 series o f tun in g v a ra cto r diodes have been desig ned fo r tuning G u n n Type No. AL-35136 AL-35137 AL-35138 AL-35130 AL-35140 AL-35141 AL-35142 AL-36143 AL-35144 AL-35145 AL-35146 Total CapsÜtanca

Lpp 97

Abstract: transil 428 54-135
Contextual Info: transient voltage suppressors «TRANSIL» íí diodes de protection «TRANSIL» THOMSON-CSF 'R M @ V r m t»A 2,5 KW G LT G LT G LT G LT / 12 24 47 120 V) m in 12 24 47 120 m ax nom 350 W 1 ms expo. 5 5 5 5 @ V(BR>* (V) U nidirectional typ es / 15 30 60

VVC733

Abstract: VVC751 VVC754 VVC758
Contextual Info: VARACTOR TUNING DIODES ;• :p Ë ô IC :s i ssiiiSiiis;! Product High tights Number C ap ac ita n ce a t Vh= 4 0 V and f=1 0 M H i illlilllii VVC733 Figure o f Meri t Q a t 4.0 V a n d 50 M H ï M in C ap acitan ce R atio from V ol is to V . , Volts Mfn Typ

MV2107

Abstract: MV2105* equivalent MMBV2109LT1 equivalent 4j diode MV2113 diode mv2105 MMBV2101LT1 MMBV2104 MV2103 MMBV2103LT1
Contextual Info: SILICON EPICAP DIODES . designed in the popular PLASTIC PA C KAG E for high volum e require­ ments of F M Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.